Patents by Inventor Li-Han Hsu
Li-Han Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967652Abstract: A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 ?m. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.Type: GrantFiled: February 16, 2023Date of Patent: April 23, 2024Assignee: TONG HSING ELECTRONIC INDUSTRIES, LTD.Inventors: Fu-Chou Liu, Jui-Hung Hsu, Yu-Chiang Peng, Chien-Chen Lee, Ya-Han Chang, Li-Chun Hung
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Patent number: 11955439Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.Type: GrantFiled: January 17, 2023Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Cheng Wu, Chien-Chia Chiu, Cheng-Hsien Hsieh, Li-Han Hsu, Meng-Tsan Lee, Tsung-Shu Lin
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Publication number: 20240071947Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.Type: ApplicationFiled: August 30, 2022Publication date: February 29, 2024Inventors: Yu-Ling Tsai, Lai Wei Chih, Meng-Tsan Lee, Hung-Pin Chang, Li-Han Hsu, Chien-Chia Chiu, Cheng-Hung Lin
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Publication number: 20230402429Abstract: Manufacturing flexibility and efficiency are obtained with a method, and resulting structure, in which RDL contact features can be formed and aligned to through silicon vias (TSV's) regardless of any potential mismatch in the respective critical dimensions (CD's) between the manufacturing process for forming the TSV's and the manufacturing process for forming the contact features. Various processes for a self-aligned exposure of the underlying TSV's, without the need for additional photolithography steps are provided.Type: ApplicationFiled: January 9, 2023Publication date: December 14, 2023Inventors: Chien-Fu Tseng, Yu Chieh Yung, Cheng-Hsien Hsieh, Hung-Pin Chang, Li-Han Hsu, Wei-Cheng Wu, Der-Chyang Yeh
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Publication number: 20230369189Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.Type: ApplicationFiled: July 24, 2023Publication date: November 16, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Yu Yeh, Tsung-Shu Lin, Wei-Cheng Wu, Tsung-Yu Chen, Li-Han Hsu, Chien-Fu Tseng
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Patent number: 11756870Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.Type: GrantFiled: April 29, 2021Date of Patent: September 12, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Yu Yeh, Tsung-Shu Lin, Wei-Cheng Wu, Tsung-Yu Chen, Li-Han Hsu, Chien-Fu Tseng
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Publication number: 20230282614Abstract: A method of forming an integrated circuit package includes following operations. A padding layer is formed on a portion of a carrier. A first semiconductor die is placed on the padding layer and a second semiconductor die is placed on the carrier. The first semiconductor die and the second semiconductor die are encapsulated with a first encapsulation layer. A first redistribution layer structure is formed over the first semiconductor die, the second semiconductor die and the first encapsulation layer. A third semiconductor die is placed on the first redistribution layer structure. The third semiconductor die is encapsulated with a second encapsulation layer. A second redistribution layer structure is formed over the third semiconductor die and the second encapsulation layer. The carrier is debonded. The padding layer is removed, and therefore, a recess is formed in the first encapsulation layer.Type: ApplicationFiled: March 1, 2022Publication date: September 7, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Hsien Hsieh, Li-Han Hsu, Wei-Cheng Wu, Der-Chyang Yeh, Wei-Chih Lai
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Publication number: 20230154863Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.Type: ApplicationFiled: January 17, 2023Publication date: May 18, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Cheng Wu, Chien-Chia Chiu, Cheng-Hsien Hsieh, Li-Han Hsu, Meng-Tsan Lee, Tsung-Shu Lin
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Patent number: 11652063Abstract: An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.Type: GrantFiled: July 13, 2020Date of Patent: May 16, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsien Hsieh, Li-Han Hsu, Wei-Cheng Wu, Hsien-Wei Chen, Der-Chyang Yeh, Chi-Hsi Wu, Chen-Hua Yu, Tsung-Shu Lin
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Patent number: 11638360Abstract: An orientation-adjustment mechanism is provided, which is adapted to be affixed to a mounting surface. The orientation-adjustment mechanism includes a base, a rod, a joint unit, and a mounted member. The base is adapted to be affixed to the mounting surface. The rod includes a first section and a second section. The first section of the rod pivots on the base. The joint unit is disposed on the second section of the rod. The joint unit includes a plurality of joint-positioning portions. The joint-positioning portions include a first joint-positioning portion and a second joint-positioning portion. The mounted member is connected to the joint unit and is adapted to be rotated relative to the joint unit. The mounted member includes a member housing. The member housing includes at least one member-positioning portion.Type: GrantFiled: October 13, 2021Date of Patent: April 25, 2023Assignee: WISTRON NEWEB CORP.Inventors: Lan-Chun Yang, Chun-Hung Huang, Li-Han Hsu, Yi-Chieh Lin
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Patent number: 11612057Abstract: A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.Type: GrantFiled: July 27, 2022Date of Patent: March 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsien Hsieh, Chi-Hsi Wu, Chen-Hua Yu, Der-Chyang Yeh, Hsien-Wei Chen, Li-Han Hsu, Wei-Cheng Wu
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Publication number: 20230054020Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.Type: ApplicationFiled: November 6, 2022Publication date: February 23, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih Lai, Chien-Chia Chiu, Chen-Hua Yu, Der-Chyang Yeh, Cheng-Hsien Hsieh, Li-Han Hsu, Tsung-Shu Lin, Wei-Cheng Wu, Yu-Chen Hsu
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Patent number: 11581268Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.Type: GrantFiled: December 6, 2021Date of Patent: February 14, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Cheng Wu, Chien-Chia Chiu, Cheng-Hsien Hsieh, Li-Han Hsu, Meng-Tsan Lee, Tsung-Shu Lin
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Patent number: 11564487Abstract: A rack assembly has two support frames and at least one shelf that are secured to the support frames by connecting assemblies. Each connecting assembly comprises a well secured to a medial surface of each vertical tube of the support frame, and a hook that extends from each end of each shelf, with each hook having an opening extending therethrough. The connecting assembly also includes a connector that is seated inside each well, each connector having a top plate that has an elongated opening, the connector also having a body that is sized and configured to fit inside a well, the body defining two wings with a space between the wings, and wherein each wing has a bump positioned in the center of the inner surface of each wing that faces the space. Each hook is inserted through the elongated opening of a corresponding connector with the bump on each wing fitted inside the opening of the hook to retain the hook inside the body of the connector.Type: GrantFiled: May 20, 2021Date of Patent: January 31, 2023Assignee: Seville Classics IncInventor: Li-Han Hsu
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Patent number: 11515229Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, a heat sink lid and conductive balls. The die is disposed on a front surface of the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the front surface of the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies. The conductive balls are disposed on the opposite surface of the circuit substrate and electrically connected with the die through the circuit substrate.Type: GrantFiled: March 31, 2020Date of Patent: November 29, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih Lai, Chien-Chia Chiu, Chen-Hua Yu, Der-Chyang Yeh, Cheng-Hsien Hsieh, Li-Han Hsu, Tsung-Shu Lin, Wei-Cheng Wu, Yu-Chen Hsu
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Patent number: 11508695Abstract: An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and a conductive line electrically connecting a first conductive via to a second conductive via. The conductive line includes a first segment over the first integrated circuit die and having a first lengthwise dimension extending in a first direction and a second segment having a second lengthwise dimension extending in a second direction different than the first direction. The second segment extends over a boundary between the first integrated circuit die and the encapsulant.Type: GrantFiled: March 9, 2021Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsien Hsieh, Li-Han Hsu, Wei-Cheng Wu, Hsien-Wei Chen, Der-Chyang Yeh, Chi-Hsi Wu, Chen-Hua Yu
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Publication number: 20220361332Abstract: A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.Type: ApplicationFiled: July 27, 2022Publication date: November 10, 2022Inventors: Cheng-Hsien Hsieh, Chi-Hsi Wu, Chen-Hua Yu, Der-Chyang Yeh, Hsien-Wei Chen, Li-Han Hsu, Wei-Cheng Wu
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Publication number: 20220352060Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.Type: ApplicationFiled: April 29, 2021Publication date: November 3, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Yu Yeh, Tsung-Shu Lin, Wei-Cheng Wu, Tsung-Yu Chen, Li-Han Hsu, Chien-Fu Tseng
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Publication number: 20220330448Abstract: An orientation-adjustment mechanism is provided, which is adapted to be affixed to a mounting surface. The orientation-adjustment mechanism includes a base, a rod, a joint unit, and a mounted member. The base is adapted to be affixed to the mounting surface. The rod includes a first section and a second section. The first section of the rod pivots on the base. The joint unit is disposed on the second section of the rod. The joint unit includes a plurality of joint-positioning portions. The joint-positioning portions include a first joint-positioning portion and a second joint-positioning portion. The mounted member is connected to the joint unit and is adapted to be rotated relative to the joint unit. The mounted member includes a member housing. The member housing includes at least one member-positioning portion.Type: ApplicationFiled: October 13, 2021Publication date: October 13, 2022Inventors: Lan-Chun YANG, Chun-Hung HUANG, Li-Han HSU, Yi-Chieh LIN
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Patent number: 11470720Abstract: A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.Type: GrantFiled: March 1, 2021Date of Patent: October 11, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsien Hsieh, Chi-Hsi Wu, Chen-Hua Yu, Der-Chyang Yeh, Hsien-Wei Chen, Li-Han Hsu, Wei-Cheng Wu