Abstract: A structure includes a metal pad, a passivation layer having a portion covering edge portions of the metal pad, and a dummy metal plate over the passivation layer. The dummy metal plate has a plurality of through-openings therein. The dummy metal plate has a zigzagged edge. A dielectric layer has a first portion overlying the dummy metal plate, second portions filling the first plurality of through-openings, and a third portion contacting the first zigzagged edge.

Abstract: Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.

Abstract: Package structures and methods of forming package structures are described. A method includes depositing and patterning a first dielectric material. The first dielectric material is deposited in first and second package component regions and in a scribe line region. The scribe line region is disposed between the first and second package component regions. The patterning the first dielectric material forms a first dielectric layer in each of the first and second package component regions and a dummy block in the scribe line region. The dummy block is separated from the first dielectric layer in each of the first and second package component regions. The method further includes forming a metallization pattern on the first dielectric layer; depositing a second dielectric material on the first dielectric layer and the metallization pattern; and patterning the second dielectric material to form a second dielectric layer.

Abstract: A rack assembly has two support frames and at least one shelf that are secured to the support frames by connecting assemblies. Each connecting assembly comprises a well secured to a medial surface of each vertical tube of the support frame, and a hook that extends from each end of each shelf, with each hook having an opening extending therethrough. The connecting assembly also includes a connector that is seated inside each well, each connector having a top plate that has an elongated opening, the connector also having a body that is sized and configured to fit inside a well, the body defining two wings with a space between the wings, and wherein each wing has a bump positioned in the center of the inner surface of each wing that faces the space. Each hook is inserted through the elongated opening of a corresponding connector with the bump on each wing fitted inside the opening of the hook to retain the hook inside the body of the connector.

Abstract: A rack assembly has two support frames and at least one shelf that are secured to the support frames by connecting assemblies. Each connecting assembly comprises a well secured to a medial surface of each vertical tube of the support frame, and a hook that extends from each end of each shelf, with each hook having an opening extending therethrough. The connecting assembly also includes a connector that is seated inside each well, each connector having a top plate that has an elongated opening, the connector also having a body that is sized and configured to fit inside a well, the body defining two wings with a space between the wings, and wherein each wing has a bump positioned in the center of the inner surface of each wing that faces the space. Each hook is inserted through the elongated opening of a corresponding connector with the bump on each wing fitted inside the opening of the hook to retain the hook inside the body of the connector.

Abstract: Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.