Patents by Inventor Li-Hsien HUANG

Li-Hsien HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Through-silicon vias for semicondcutor substrate and method of manufacture
    Patent number: 8487410
    Abstract: A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening.
    Type: Grant
    Filed: April 13, 2011
    Date of Patent: July 16, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Cheng-Hung Chang, Ebin Liao, Chia-Lin Yu, Hsiang-Yi Wang, Chun Hua Chang, Li-Hsien Huang, Darryl Kuo, Tsang-Jiuh Wu, Wen-Chih Chiou
  • THROUGH-SILICON VIAS FOR SEMICONDCUTOR SUBSTRATE AND METHOD OF MANUFACTURE
    Publication number: 20120261827
    Abstract: A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening.
    Type: Application
    Filed: April 13, 2011
    Publication date: October 18, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua YU, Cheng-Hung CHANG, Ebin LIAO, Chia-Lin YU, Hsiang-Yi WANG, Chun Hua CHANG, Li-Hsien HUANG, Darryl KUO, Tsang-Jiuh WU, Wen-Chih CHIOU