Patents by Inventor Li-Jui Chen

Li-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INSPECTION TOOL FOR A SEMICONDUCTOR PROCESSING TOOL AND METHODS OF USE
    Publication number: 20220404716
    Abstract: A wafer table inspection tool described herein is capable of being positioned over a wafer table while the wafer table is positioned in a bottom module of an exposure tool of a lithography system. The wafer table inspection tool is capable of quickly evaluating the condition of surface burls on the wafer table and evaluating cleaning performance of a cleaning operation in which the surface burls are cleaned.
    Type: Application
    Filed: April 15, 2022
    Publication date: December 22, 2022
    Inventors: Ming-Hsun TSAI, Cheng-Hao LAI, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • SEMICONDUCTOR SYSTEM INSPECTION TOOL AND METHODS OF OPERATION
    Publication number: 20220408538
    Abstract: Some implementations described herein provide techniques and apparatuses for inspecting interior surfaces of a vessel of a radiation source for an accumulation of a target material. An inspection tool, including a laser-scanning system and a motor system supported by an elongated supported member, may be inserted into the vessel to generate an accurate three-dimensional profile of the interior surfaces. Use of the inspection tool is efficient, with short setup and scan times that substantially reduce a duration associated with evaluating the interior surfaces of the vessel for the accumulation.
    Type: Application
    Filed: April 11, 2022
    Publication date: December 22, 2022
    Inventors: Jou-Hsuan LU, Chiao-Hua CHENG, Cheng-Hsuan WU, Ko-Ching HOU, Jyun-Yan CHUANG, Cheng-Hao LAI, Yu-Kuang SUN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • SEMICONDUCTOR PROCESSING TOOL AND METHOD OF USING THE SAME
    Publication number: 20220404722
    Abstract: A plurality of hydrogen outlets are arrayed along a direction normal to a surface (such as a surface of a collector) of an extreme ultraviolet lithography (EUV) tool to increase a volume of hydrogen gas surrounding the surface. As a result, airborne tin is more likely to be stopped by the hydrogen gas surrounding the surface and less likely to bind to the surface. Fewer tin deposits results in increased lifetime for the surface, which reduces downtime for the EUV tool. Additionally, a control device may receive (e.g., from a camera and/or another type of sensor) an indication of levels of tin contamination on the surface and control flow rates to adjust a thickness of the hydrogen curtain. As a result, tin contamination on the collector is less likely to occur and will be more efficiently cleaned by the hydrogen gas, which results in increased lifetime for the surface and reduced downtime for the EUV tool.
    Type: Application
    Filed: February 23, 2022
    Publication date: December 22, 2022
    Inventors: Tzu-Jung PAN, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • EUV lithography system and method for decreasing debris in EUV lithography system
    Patent number: 11531278
    Abstract: Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • System and method for supplying target material in an EUV light source
    Patent number: 11533799
    Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hsin-Feng Chen, Ming-Hsun Tsai, Li-Jui Chen, Shang-Chieh Chien, Heng-Hsin Liu, Cheng-Hao Lai, Yu-Huan Chen, Wei-Shin Cheng, Yu-Kuang Sun, Cheng-Hsuan Wu, Yu-Fa Lo, Chiao-Hua Cheng
  • Method and system for generating droplets for EUV photolithography processes
    Patent number: 11528797
    Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: December 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Kuang Sun, Cheng-Hao Lai, Yu-Huan Chen, Wei-Shin Cheng, Ming-Hsun Tsai, Hsin-Feng Chen, Chiao-Hua Cheng, Cheng-Hsuan Wu, Yu-Fa Lo, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Replacement method for droplet generator
    Patent number: 11528798
    Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: December 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu Tu, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng
  • Lithography system and method thereof
    Patent number: 11520243
    Abstract: A method includes transferring a wafer over a wafer stage on a wafer table. The wafer table includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket and a second bracket, and a stopper. The second sliding member is movable along a first direction, in which the first sliding member is coupled to a track of the second sliding member, the first sliding member being movable along a second direction vertical to the first direction. The first bracket and the second bracket are connected by a leaf spring. The method includes moving the wafer stage toward the edge of the table body, such that the wafer stage pushes the first cable outwardly, such that the leaf spring is moved toward a first protective film on a surface of the stopper facing the leaf spring.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: December 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Hua Wang, Chueh-Chi Kuo, Kuei-Lin Ho, Zong-You Yang, Cheng-Wei Sun, Wei-Yuan Chen, Cheng-Chieh Chen, Heng-Hsin Liu, Li-Jui Chen
  • Highly efficient automatic particle cleaner method for EUV systems
    Patent number: 11520246
    Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: December 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Yu Tu, Shao-Hua Wang, Yen-Hao Liu, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • MASK FOR ATTRACTING CHARGED PARTICLES AND METHOD FOR USING THE SAME
    Publication number: 20220382173
    Abstract: A method includes transporting a cleaning mask and a photomask into an enclosure of a lithography exposure apparatus, wherein the photomask includes a multilayered mirror structure, and the cleaning mask is free of the multilayered mirror structure; placing the cleaning mask on a reticle stage of the lithography exposure apparatus; and charging the cleaning mask to attract charged particles in the enclosure.
    Type: Application
    Filed: May 27, 2021
    Publication date: December 1, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-An CHEN, Li-Jui CHEN, Heng-Hsin LIU, Tzung-Chi FU, Han-Lung CHANG
  • EUV RADIATION SOURCE APPARATUS FOR LITHOGRAPHY
    Publication number: 20220382048
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: Yu-Chih CHEN, Po-Chung CHENG, Li-Jui CHEN, Shang-Chieh CHIEN, Sheng-Kang YU, Wei-Chun YEN
  • LITHOGRAPHY SYSTEM AND METHOD THEREOF
    Publication number: 20220382172
    Abstract: A lithography system includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket, a rail guide, and a first protective film. The first sliding member is coupled to the wafer stage. The second sliding member is coupled to an edge of the table body, in which the first sliding member is coupled to a track of the second sliding member. The first bracket fixes the first cable, the first bracket being coupled to a roller structure, in which the roller structure includes a body and a wheel coupled to the body. The rail guide confines a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide, in which the roller structure is moveable along the first protective film on the surface of the rail guide.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Hua WANG, Chueh-Chi KUO, Kuei-Lin HO, Zong-You YANG, Cheng-Wei SUN, Wei-Yuan CHEN, Cheng-Chieh CHEN, Heng-Hsin LIU, Li-Jui CHEN
  • EUV radiation source apparatus for lithography
    Patent number: 11513441
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
    Type: Grant
    Filed: March 22, 2021
    Date of Patent: November 29, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chih Chen, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien, Sheng-Kang Yu, Wei-Chun Yen
  • Thermal controlling method in lithography system
    Patent number: 11506986
    Abstract: In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: November 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Yen-Shuo Su, Jui-Pin Wu, Li-Jui Chen
  • SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION
    Publication number: 20220365442
    Abstract: Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.
    Type: Application
    Filed: October 6, 2021
    Publication date: November 17, 2022
    Inventors: Chiao-Hua CHENG, Yu-Kuang SUN, Wei-Shin CHENG, Yu-Huan CHEN, Ming-Hsun TSAI, Cheng-Hao LAI, Cheng-Hsuan WU, Yu-Fa LO, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN, Sheng-Kang YU
  • EUV LIGHT SOURCE AND APPARATUS FOR EUV LITHOGRAPHY
    Publication number: 20220369447
    Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Wei-Shin CHENG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG, Hsiao-Lun CHANG
  • PELLICLE ASSEMBLY AND METHOD OF MAKING SAME
    Publication number: 20220365421
    Abstract: A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.
    Type: Application
    Filed: May 12, 2021
    Publication date: November 17, 2022
    Inventors: Hsin-Chang Lee, Pei-Cheng Hsu, Ta-Cheng Lien, Li-Jui Chen, Tsai-Sheng Gau, Chin-Hsiang Lin
  • SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION
    Publication number: 20220357676
    Abstract: A reticle is pre-heated prior to an exposure operation of a semiconductor substrate lot to reduce substrate to substrate temperature variations of the reticle in the exposure operation. The reticle may be pre-heated while being stored in a reticle storage slot, while being transferred from the reticle storage slot to a reticle stage of an exposure tool, and/or in another location prior to being secured to the reticle stage for the exposure operation. In this way, the reduction in temperature variation of the reticle in the exposure operation provided by pre-heating the reticle may reduce overlay deltas and misalignment for the semiconductor substrates that are processed in the exposure operation. This increases overlay performance, increases yield of the exposure tool, and increases semiconductor device quality.
    Type: Application
    Filed: August 27, 2021
    Publication date: November 10, 2022
    Inventors: Kai-Chieh CHANG, Kai-Fa HO, Li-Jui CHEN, Heng-Hsin LIU
  • SHOCK WAVE VISUALIZATION FOR EXTREME ULTRAVIOLET PLASMA OPTIMIZATION
    Publication number: 20220361311
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 10, 2022
    Inventors: Yen-Shuo SU, Jen-Hao YEH, Jhan-Hong YEH, Ting-Ya CHENG, Yee-Shian Henry TONG, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
  • RADIATION SOURCE APPARATUS AND METHOD FOR USING THE SAME
    Publication number: 20220359097
    Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, and a reflective mirror. The vessel has an exit aperture. The laser source is at one end of the vessel and configured to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The reflective mirror is in the vessel and configured to reflect the laser beam toward an edge of the vessel.
    Type: Application
    Filed: August 20, 2021
    Publication date: November 10, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Chung TU, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU