Patents by Inventor Li-Jui Chen

Li-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE
    Publication number: 20220011675
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 13, 2022
    Inventors: Ting-Ya CHENG, Han-Lung CHANG, Shi-Han SHANN, Li-Jui CHEN, Yen-Shuo SU
  • System and method for extreme ultraviolet source control
    Patent number: 11224115
    Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: January 11, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu
  • DETECTION USING SEMICONDUCTOR DETECTOR
    Publication number: 20210407764
    Abstract: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.
    Type: Application
    Filed: February 9, 2021
    Publication date: December 30, 2021
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin KING, Chrong-Jung LIN, Burn-Jeng LIN, Chien-Ping WANG, Shao-Hua WANG, Chun-Lin CHANG, Li-Jui CHEN
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 11212903
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ting-Ya Cheng, Chun-Lin Chang, Li-Jui Chen, Han-Lung Chang
  • Apparatus and method for monitoring reflectivity of the collector for extreme ultraviolet radiation source
    Patent number: 11204556
    Abstract: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: December 21, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chih Huang, Chi Yang, Che-Chang Hsu, Li-Jui Chen, Po-Chung Cheng
  • PLASMA POSITION CONTROL FOR EXTREME ULTRAVIOLET LITHOGRAPHY LIGHT SOURCES
    Publication number: 20210389678
    Abstract: A system for controlling plasma position in extreme ultraviolet lithography light sources may include a vacuum chamber, a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed from a metal material, a laser light source to fire a plurality of laser pulses, including at least a first pulse and a second pulse, into the vacuum chamber, a sensor to detect an observed plasma position within the chamber, wherein the observed plasma position comprises a position at which the plurality of laser pulses vaporizes a droplet of the stream of droplets to produce a plasma that emits extreme ultraviolet radiation, and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma position and a target plasma position.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 16, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu CHEN, Hsin-Feng CHEN, Chi YANG, Li-Jui CHEN
  • EUV Lithography Mask With A Porous Reflective Multilayer Structure
    Publication number: 20210364907
    Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
    Type: Application
    Filed: August 4, 2021
    Publication date: November 25, 2021
    Inventors: Chih-Tsung Shih, Shih-Chang Shih, Li-Jui Chen, Po-Chung Cheng
  • METHOD AND APPARATUS FOR CONTROLLING EXTREME ULTRAVIOLET LIGHT
    Publication number: 20210364931
    Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu CHEN, Shang-Chieh CHIEN, Li-Jui CHEN
  • EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM
    Publication number: 20210364934
    Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Thicknesses of edges of the cover is different from a thickness of a center of the cover.
    Type: Application
    Filed: August 6, 2021
    Publication date: November 25, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ssu-Yu Chen, Po-Chung Cheng, Li-Jui Chen, Che-Chang Hsu, Chi Yang
  • SYSTEM AND METHOD FOR PERFORMING EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY PROCESSES
    Publication number: 20210349396
    Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.
    Type: Application
    Filed: March 5, 2021
    Publication date: November 11, 2021
    Inventors: Tai-Yu CHEN, Sagar Deepak KHIVSARA, Kuo-An LIU, Chieh HSIEH, Shang-Chieh CHIEN, Gwan-Sin CHANG, Kai Tak LAM, Li-Jui CHEN, Heng-Hsin LIU, Chung-Wei WU, Zhiqiang WU
  • Droplet generator, EUV lithography device and method of generating a series of droplets using a droplet generator
    Patent number: 11172566
    Abstract: A droplet generator includes a steering system, a reservoir, a nozzle, a first heater, a second heater and a third heater. The steering system is used for controlling a position of droplet release of the droplet generator. The reservoir is held on the steering system for storing tin. The nozzle is connected with the reservoir for generating tin droplets, wherein the nozzle comprises at least a first zone, a second zone and a third zone connected in sequence. The first heater surrounds a peripheral surface of the nozzle in the first zone. The second heater surrounds a peripheral surface of the nozzle in the second zone. The third heater surrounds a peripheral surface of the nozzle in the third zone, wherein the heating of the first heater, the second heater and the third heater are separately controlled.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: November 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jen-Hung Hsiao, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien
  • Method and device for measuring contamination in EUV source
    Patent number: 11166361
    Abstract: A lithography apparatus includes an extreme ultraviolet (EUV) scanner, an EUV source coupled to the EUV scanner, a quartz crystal microbalance and a feedback controller. The quartz crystal microbalance is disposed on an internal surface of at least one of the EUV source and the EUV scanner. The feedback controller is coupled to the quartz crystal microbalance and one or more of a radiation source, a droplet generator, and optical guide elements controlling the trajectory of the radiation source associated with the EUV source.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: November 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Hung Chen, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Laser source device, extreme ultraviolet lithography device and method
    Patent number: 11158989
    Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: October 26, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Henry Yee-Shian Tong, Wen-Chih Wang, Hsin-Liang Chen, Louis Chun-Lin Chang, Cheng-Chieh Chen, Li-Jui Chen, Po-Chung Cheng, Jeng-Yann Tsay
  • Method and apparatus for collecting information used in image-error compensation
    Patent number: 11150561
    Abstract: A method for collecting information in image-error compensation is provided. The method includes providing a reticle having a first image structure and a second image structure; moving a light shading member to control a first exposure field; projecting a light over the first exposure field; recording an image of the first image structure after the light is projected; moving the light shading member to control a second exposure field; projecting the light over the second exposure field; and recording an image of the second image structure after the light is projected.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: October 19, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Wen Cho, Fu-Jye Liang, Chun-Kuang Chen, Chih-Tsung Shih, Li-Jui Chen, Po-Chung Cheng, Chin-Hsiang Lin
  • EUV wafer defect improvement and method of collecting nonconductive particles
    Patent number: 11150564
    Abstract: An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tao-Hsin Chen, Li-Jui Chen, Chia-Yu Lee
  • Extreme ultraviolet photolithography method
    Patent number: 11153958
    Abstract: An extreme ultraviolet (EUV) lithography method includes causing a first metallic droplet to move along a shroud and through an aperture of the shroud at a first velocity, and adjusting an open area of the aperture of the shroud. After adjusting the open area of the aperture of the shroud, a second metallic droplet is caused to move along the shroud and through the aperture of the shroud at a second velocity, in which the second velocity is different from the first velocity.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Hsun Tsai, Han-Lung Chang, Yen-Hsun Chen, Shao-Hua Wang, Li-Jui Chen, Po-Chung Cheng
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 11153959
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien, Yen-Shuo Su, Chieh Hsieh, Chi Yang
  • THERMAL CONTROLLING METHOD IN LITHOGRAPHY SYSTEM
    Publication number: 20210318625
    Abstract: In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.
    Type: Application
    Filed: April 9, 2020
    Publication date: October 14, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi YANG, Yen-Shuo SU, Jui-Pin WU, Li-Jui CHEN
  • Droplet generator assembly and method for using the same and radiation source apparatus
    Patent number: 11134558
    Abstract: A droplet generator assembly includes a storage tank, a refill system, a droplet generator, and a temperature control system. The storage tank is configured to store a target material. The refill system is connected to the storage tank. The droplet generator includes a reservoir and a nozzle connected to the reservoir, in which the droplet generator is connected to the refill system, and the refill system is configured to deliver the target material to the reservoir. The temperature control system is adjacent to the refill system or the reservoir.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: September 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu Tu, Yu-Kuang Sun, Shao-Hua Wang, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng, Cheng-Hao Lai, Hsin-Feng Chen, Wei-Shin Cheng, Ming-Hsun Tsai, Yen-Hsun Chen
  • REPLACEMENT METHOD FOR DROPLET GENERATOR
    Publication number: 20210298161
    Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.
    Type: Application
    Filed: June 3, 2021
    Publication date: September 23, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG