Abstract: The present disclosure provides an electronic device, which includes a substrate, a first data line arranged on the substrate and extending along a first direction, a first electrode and a second electrode arranged on the substrate and arranged along the first direction, and a third electrode and a fourth electrode arranged on the substrate and arranged along the first direction, the first electrode, the second electrode, the third electrode and the fourth electrode are electrically connected with the first data line, and the first electrode and the second electrode are located on a first side of the first data line, and the third electrode and the fourth electrode are located on a second side of the first data line relative to the first side.

Abstract: A method of forming a semiconductor structure includes providing a substrate with an array region, a peripheral region, and a transition region between the array region and the peripheral region. A patterned floating gate layer is formed on the array region and the peripheral region, and a stacked layer is conformally formed on the substrate, wherein a recess is formed over the transition region. A photoresist layer is formed on the substrate, and the photoresist layer is patterned to form an array region pattern on the stacked layer of the array region, wherein a portion of the photoresist layer remains at the bottom of the recess, and a recess pattern is formed. The array region pattern and the recess pattern are sequentially transferred to the stacked layer, the patterned floating gate layer and the substrate to form a plurality of arrays and a pair of blocking structures.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: An image processing method includes: acquiring an input image of a teaching scenario; performing detection on the input image to determine a rectangular detection area that includes a blackboard-writing area; analyzing the rectangular detection area to determine a target area corresponding to the blackboard-writing area; determining four vertices of the target area; and according to the four vertices of the target area, performing coordinate transformation on the target area to obtain a corrected blackboard-writing area image.

Abstract: This disclosure provides method of manufacturing pharmaceutical composition for treating cancer, which provides great cell yield via not performing negative selection on CD3?CD19?CD14?. By administration of the pharmaceutical composition, cancer cells in a subject may be effectively inhibited via cell-mediated immunity.

Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using and making the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of the RNA methyltransferase inhibitor and an effective amount of a DNA damaging agent to the subject.

Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of an RNA methyl-transferase inhibitor to the subject.

Abstract: A new approach for the treatment of a malignant disease is provided. The new method comprises administering a traditional anti-cancer therapy in combination with a DNA or protein vaccine comprising CTLA-4 and PD-1, or a DNA or protein vaccine comprising CTLA-4 and PD-L1.

Abstract: A modified naphthalene series water reducing agent for concrete with high slit content, and preparation method and application thereof, belonging to the field of concrete admixtures, and comprising the following components by weight: 20-30 wt % of naphthalene series water reducing agent, 10-20 wt % of high molecular weight polyethylene, 0.1-1 wt % of solid acid catalyst, and the balance of alkane solvent, and the sum of the components is 100 wt %. The present invention provides a simple preparation method for the water reducing agent, and the prepared solvent can be recycled, moreover, on the premises of not increasing costs, the prepared water reducing agent can not only effectively solve the fluidity decline of fresh concrete prepared by aggregate with high slit content, but improves the mechanical strength and other properties of concrete, in order to meet the construction requirements of concrete works.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: A cerium-zirconium-aluminum-based composite material, a cGPF catalyst and a preparation method thereof are provided. The cerium-zirconium-aluminum-based composite material adopts a stepwise precipitation method, firstly preparing an aluminum-based pre-treated material, then coprecipitating the aluminum-based pre-treated material with zirconium and cerium sol, and finally roasting at high temperature to obtain the cerium-zirconium-aluminum-based composite material. The cerium-zirconium-aluminum-based composite material has better compactness and higher density, and when it is used in cGPF catalyst, it occupies a smaller volume of pores on the catalyst carrier, such that cGPF catalyst has lower back pressure and better ash accumulation resistance, which is beneficial to large-scale application of cGPF catalyst.