Abstract: A cerium-zirconium-aluminum-based composite material, a cGPF catalyst and a preparation method thereof are provided. The cerium-zirconium-aluminum-based composite material adopts a stepwise precipitation method, firstly preparing an aluminum-based pre-treated material, then coprecipitating the aluminum-based pre-treated material with zirconium and cerium sol, and finally roasting at high temperature to obtain the cerium-zirconium-aluminum-based composite material. The cerium-zirconium-aluminum-based composite material has better compactness and higher density, and when it is used in cGPF catalyst, it occupies a smaller volume of pores on the catalyst carrier, such that cGPF catalyst has lower back pressure and better ash accumulation resistance, which is beneficial to large-scale application of cGPF catalyst.

Abstract: The disclosure relates to an industrial personal computer comprising: a main housing at least one panel of which is used as a CPU heat dissipating member, a portion of the one panel being recessed to form a pocket; a CPU, heat generated by the CPU being transferred to the CPU heat dissipating member and then dissipated directly into the ambient air; a SSD at least partially positioned in the pocket; and a SSD heat dissipating member positioned in the pocket and exposed to the ambient air, heat generated by the SSD being transferred to the SSD heat dissipating member and then dissipated directly into the ambient air, wherein the SSD heat dissipating member is heat isolated from the CPU heat dissipating member.

Abstract: An explosion-proof hitting ball and a training device including the same are provided, wherein the explosion-proof hitting ball includes: a tubular member made of plastic material and including an outer wall; and a ball member made of explosion-proof material and including a tubular wall and a ball wall, the tubular wall and the ball wall being transverse and connected to each other to form a chamber, the tubular wall being disposed around the tubular member and integrally connected to the outer wall by melting-connection.

Abstract: A punching training device includes: a base; a supporting assembly including a fixed rod and a telescopic rod, the fixed rod connected to the base, the telescopic rod being detachably connected to the fixed rod, the telescopic rod being retractable in an axial direction of the fixed rod relative to the fixed rod; and a punching assembly including an elastic rod and a strike body, the elastic rod being detachably connected to the telescopic rod, the elastic rod being made of elastic material, the strike body being disposed on the elastic rod.

Abstract: A method of forming a semiconductor structure includes providing a substrate with an array region, a peripheral region, and a transition region between the array region and the peripheral region. A patterned floating gate layer is formed on the array region and the peripheral region, and a stacked layer is conformally formed on the substrate, wherein a recess is formed over the transition region. A photoresist layer is formed on the substrate, and the photoresist layer is patterned to form an array region pattern on the stacked layer of the array region, wherein a portion of the photoresist layer remains at the bottom of the recess, and a recess pattern is formed. The array region pattern and the recess pattern are sequentially transferred to the stacked layer, the patterned floating gate layer and the substrate to form a plurality of arrays and a pair of blocking structures.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: This disclosure provides method of manufacturing pharmaceutical composition for treating cancer, which provides great cell yield via not performing negative selection on CD3?CD19?CD14?. By administration of the pharmaceutical composition, cancer cells in a subject may be effectively inhibited via cell-mediated immunity.

Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using and making the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of the RNA methyltransferase inhibitor and an effective amount of a DNA damaging agent to the subject.

Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of an RNA methyl-transferase inhibitor to the subject.

Abstract: A new approach for the treatment of a malignant disease is provided. The new method comprises administering a traditional anti-cancer therapy in combination with a DNA or protein vaccine comprising CTLA-4 and PD-1, or a DNA or protein vaccine comprising CTLA-4 and PD-L1.