Abstract: The present invention relates to the technical field of geomagnetic activities, and in particular to an auroral substorm simulation method and macroscopic model based on neutral atom imaging measurement. The method includes the following steps: establishing a neutral atom imaging simulation equation for dynamic evolution of ion flux distribution of a ring current guided by ion pitch angle diffusion; and using the neutral atom imaging simulation equation, forward modeling neutral atom simulation images in an ecliptic plane corresponding to different ion pitch angle distribution functions during a geomagnetically quiet period and during an auroral substorm period to reproduce ring current ion flux distribution patterns in a growth phase stage and a recovery phase stage of an auroral substorm process.

Abstract: A method for detecting a display panel defect, including: collecting a panel image of a to-be-detected display panel, a plurality of first pixels of the display panel corresponding to a plurality of second pixels in the panel image; converting the panel image into a binary image; dilating each bright spot region in the binary image such that adjacent bright spot regions communicate with each other to form at least one closed communication region in the binary image; determining a region of interest mask image in the binary image in accordance with the at least one closed communication region; determining a region of interest in accordance with the region of interest mask image and the panel image; and performing feature identification on the region of interest to determine a defect of the display panel.

Abstract: A method of forming a semiconductor structure includes providing a substrate with an array region, a peripheral region, and a transition region between the array region and the peripheral region. A patterned floating gate layer is formed on the array region and the peripheral region, and a stacked layer is conformally formed on the substrate, wherein a recess is formed over the transition region. A photoresist layer is formed on the substrate, and the photoresist layer is patterned to form an array region pattern on the stacked layer of the array region, wherein a portion of the photoresist layer remains at the bottom of the recess, and a recess pattern is formed. The array region pattern and the recess pattern are sequentially transferred to the stacked layer, the patterned floating gate layer and the substrate to form a plurality of arrays and a pair of blocking structures.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: This disclosure provides method of manufacturing pharmaceutical composition for treating cancer, which provides great cell yield via not performing negative selection on CD3?CD19?CD14?. By administration of the pharmaceutical composition, cancer cells in a subject may be effectively inhibited via cell-mediated immunity.

Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using and making the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of the RNA methyltransferase inhibitor and an effective amount of a DNA damaging agent to the subject.

Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of an RNA methyl-transferase inhibitor to the subject.

Abstract: A new approach for the treatment of a malignant disease is provided. The new method comprises administering a traditional anti-cancer therapy in combination with a DNA or protein vaccine comprising CTLA-4 and PD-1, or a DNA or protein vaccine comprising CTLA-4 and PD-L1.

Abstract: A modified naphthalene series water reducing agent for concrete with high slit content, and preparation method and application thereof, belonging to the field of concrete admixtures, and comprising the following components by weight: 20-30 wt % of naphthalene series water reducing agent, 10-20 wt % of high molecular weight polyethylene, 0.1-1 wt % of solid acid catalyst, and the balance of alkane solvent, and the sum of the components is 100 wt %. The present invention provides a simple preparation method for the water reducing agent, and the prepared solvent can be recycled, moreover, on the premises of not increasing costs, the prepared water reducing agent can not only effectively solve the fluidity decline of fresh concrete prepared by aggregate with high slit content, but improves the mechanical strength and other properties of concrete, in order to meet the construction requirements of concrete works.

Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.

Abstract: A cerium-zirconium-aluminum-based composite material, a cGPF catalyst and a preparation method thereof are provided. The cerium-zirconium-aluminum-based composite material adopts a stepwise precipitation method, firstly preparing an aluminum-based pre-treated material, then coprecipitating the aluminum-based pre-treated material with zirconium and cerium sol, and finally roasting at high temperature to obtain the cerium-zirconium-aluminum-based composite material. The cerium-zirconium-aluminum-based composite material has better compactness and higher density, and when it is used in cGPF catalyst, it occupies a smaller volume of pores on the catalyst carrier, such that cGPF catalyst has lower back pressure and better ash accumulation resistance, which is beneficial to large-scale application of cGPF catalyst.