Abstract: In various examples, latency of human interface devices (HIDs) may be accounted for in determining an end-to-end latency of a system. For example, when an input is received at an HID, an amount of time for the input to reach a connected device may be computed by the HID and included in a data packet transmitted by the HID device to the connected device. The addition of the peripheral latency to the end-to-end latency determination may provide a more comprehensive latency result for the system and, where the peripheral latency of an HID is determined to have a non-negligible contribution to the end-to-end latency, a new HID component may be implemented, a configuration setting associated with the HID component may be updated, and/or other actions may be taken to reduce the contribution of the peripheral latency to the overall latency of the system.

Abstract: An emergency treatment device for algal blooms in reservoir tributaries and bays includes a hull, an automatic detection unit provided on the hull, an algae collection-separation unit, an ultrasonic algae removal unit, a micro-current electrolytic algae suppression unit, an algaecide adding unit, a power unit and a control unit. The automatic detection unit, the algae collection-separation unit, the ultrasonic algae removal unit, the micro-current electrolytic algae suppression unit, the algaecide adding unit and the power unit are connected with the control unit. The algae collection-separation unit is used for suction and ex-situ treatment of high-density algae on a surface of the water body. The ultrasonic algae removal unit, the micro-current electrolytic algae suppression unit and the algaecide adding unit are used for in-situ treatment of algae in the water body.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: A high-electron mobility transistor includes a substrate, a gate electrode, a drain electrode, a source electrode and a first field plate. The substrate includes an active region. The gate electrode is disposed on the substrate. The drain electrode is disposed at one side of the gate electrode. The source electrode is disposed at another side of the gate electrode. The first field plate is electrically connected with the source electrode and extends from the source electrode toward the drain electrode. An overlapping area of the first field plate and the gate electrode is smaller than an overlapping area of the gate electrode and the active region.

Abstract: A semiconductor testing apparatus is provided, and includes a base, a conductive socket, a pusher, and a thermal interface material structure. The conductive socket is disposed in the base for containing a semiconductor structure. The pusher is over the conductive socket and movable in a vertical direction. The thermal interface material structure is connected to the pusher, and includes a resilient material and a metal film around the resilient material. The metal film and the resilient material are in contact with the pusher.

Abstract: Methods are proposed to define UE behavior for performing synchronization signal block (SSB) based radio link monitoring (RLM) and channel state information reference signal (CSI-RS) based RLM. In a first novel aspect, if CSI-RS based RLM-RS is not QCLed to any CORESET, then UE determines that CSI-RS RLM configuration is error and does not perform RLM accordingly. In a second novel aspect, SSB for RLM and RLM CSI-RS resources are configured with different numerologies. UE perform SSB based RLM and CSI-RS based RLM based on whether the SSB and CSI-RS resources are TDMed configured by the network. In a third novel aspect, when multiple SMTC configurations are configured to UE, UE determines an SMTC period and whether SMTC and RLM-RS are overlapped for the purpose of RLM evaluation period determination.

Abstract: The invention provides novel methods for liquid-mediated delivery of pollen grains to enclosed stigmas in recipient female flowers. For example, methods for liquid-mediated pollination are provided. The methods provided include collecting pollen from a donor plant, suspending the collected pollen in a liquid solution, and introducing said solution to an enclosed stigma of a recipient flower bud on a recipient plant, thereby pollinating the flower with the pollen from the donor plant.

Abstract: The present application provides a method for estimating abundance and distribution features of antibiotic resistance genes (ARGs) in surfacial sediments of lake and reservoir, including step 1 of obtaining an annual input total of nitrogen and phosphorus pollutants of each tributary flowing into the lake and reservoir; step 2 of constructing a linear regression equation between the abundance of each type of ARGs and the nitrogen and phosphorus discharge; and step 3 of calculating annual input total of nitrogen and phosphorus pollutants to be estimated for each geographical location of the lake and reservoir using inverse distance weighting interpolation analysis based on the annual input total of the nitrogen and phosphorus pollutants obtained in step 1, and substituting the calculated annual input total into the linear regression equation to estimate the abundance of each type of ARGs and analyze a distribution feature of the ARGs.

Abstract: A pixel circuit is provided. A reader reads a first data voltage and a threshold voltage of a target compensation transistor on a current path of a driving current in a light-emitting driver to a control terminal of the target compensation transistor during a read period. During a light-emitting period, the reader uses a second data voltage to compensate the control terminal of the target compensation transistor, which ensures that the driving current is only related to the first data voltage. The second data voltage is twice voltage value of the first data voltage.

Abstract: Aspects of the disclosure provide an electronic device including a transceiver and processing circuitry and a method for scheduling restriction. The transceiver can receive from a network configuration information to configure a measurement resource for a signal quality measurement. The signal quality measurement can determine a signal quality of a reference signal from the network to the electronic device. The processing circuitry can determine whether to apply the scheduling restriction based on the configuration information. In response to applying the scheduling restriction, the processing circuitry can determine when to apply the scheduling restriction based at least on a resource type of the measurement resource, the resource type being one of periodic, semi-persistent, and aperiodic. In an example, the signal quality of the reference signal includes a layer 1 (L1) reference signal received power (L1-RSRP) for the reference signal and the signal quality measurement includes an L1-RSRP measurement.

Abstract: The method for measuring thickness, roughness and interface stiffness of coating layer by using ultrasonic phase derivative spectrum which relates to technical field of the ultrasonic non-destructive testing. The method adopts an ultrasonic detection system which includes a sample of the coating layer, an ultrasonic flat probe, an ultrasonic flaw detector, a XYZ three-dimensional stepping device and a computer.

Abstract: A manufacturing method of a semiconductor device includes depositing a first bilayer structure over a substrate, in which the first bilayer structure includes a silicon oxide layer and a silicon nitride layer over the silicon nitride layer; forming a first carbonaceous hard mask on the first bilayer structure; forming a second bilayer structure on the first carbonaceous hard mask; forming a mask stack of alternating anti-reflecting coating (ARC) hard masks and second carbonaceous hard masks on the second bilayer structure; and coating a photoresist on the mask stack.

Abstract: A dummy gate structure may be formed for a semiconductor device. The dummy gate structure may be formed from an amorphous polysilicon layer. The amorphous polysilicon layer may be deposited in a blanket deposition operation. An annealing operation is performed for the semiconductor device to remove voids, seams, and/or other defects from the amorphous polysilicon layer. The annealing operation may cause the amorphous polysilicon layer to crystallize, thereby resulting in the amorphous polysilicon layer transitioning into a crystallized polysilicon layer. A dual radio frequency (RF) source etch technique may be performed to increase the directionality of ions and radicals in a plasma that is used to etch the crystallized polysilicon layer to form the dummy gate structure. The increased directionality of the ions increases the effectiveness of the ions in etching through the different crystal grain boundaries which increases the etch rate uniformity across the crystallized polysilicon layer.

Abstract: The method for measuring thickness, roughness and interface stiffness of coating layer by using ultrasonic phase derivative spectrum which relates to technical field of the ultrasonic non-destructive testing. The method adopts an ultrasonic detection system which includes a sample of the coating layer, an ultrasonic flat probe, an ultrasonic flaw detector, a XYZ three-dimensional stepping device and a computer.

Abstract: A negative electrode active material for a secondary battery including: natural graphite particles; and a carbon coating layer on a surface and in an inside of the natural graphite particles. The negative electrode active material for a secondary battery has a porosity of 3% to 13%.

Abstract: The invention discloses a system for producing hydrogen by ammonia decomposition reaction and a hydrogen production method.

Abstract: The present invention relates to a light-emitting diode (LED) which comprises a light-emitting layer, an upper electrode, a lower electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a low refractive index dielectric layer. The upper electrode and the lower electrode are respectively disposed on two opposite sides of the light-emitting layer. The first semiconductor layer is disposed between the light-emitting layer and the upper electrode. The second semiconductor layer is disposed between the light-emitting layer and the lower electrode. The third semiconductor layer is disposed between the second semiconductor layer and the lower electrode. The low refractive index dielectric layer is disposed to surround the lower electrode. The upper electrode is vertically overlapped with the lower electrode and the first semiconductor layer and the third semiconductor layer are electrically opposite to the second semiconductor layer.

Abstract: A healthy equipment has at least one height-adjustable wheel set mounted on its bottom, so that the healthy equipment can be operated to move on a ground. Each height-adjustable wheel set has a swing seat that can be rotatable between a first angle and a second angle, a wheel that can be moved up or down along with rotation of the swing seat, and a pushing member that can be movable between a retracted position and an abutting position. When the pushing member rotates from the retracted position to the abutting position, the swing seat will rotate from the first angle to the second angle to lower the wheel to contact the ground. At the same time, a reaction force from the ground is applied to the pushing member in a direction corresponding to a rotational direction of the pushing member from the retracted position to the abutting position.

Abstract: A method of performing beam failure recovery (BFR) procedure in primary cell and secondary cells with reduced UE complexity is proposed. A UE is configured to operate in one or multiple frequency bands under carrier aggregation or dual connectivity. The UE performs beam failure recovery (BFR) procedure on one serving cell for one frequency band across FR1 and FR2. The serving cell is an active serving cell including both primary cell (PCell) and secondary cells (SCells). Specifically, for SCell BFR procedure, a sharing factor K is introduced when multiple SCells are configured to perform BFR procedure. In one embodiment, the SCell BFR evaluation period equals to a predefined PCell BFR evaluation period times the sharing factor K.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The method may be performed by a UE. In certain configurations, the UE transmits, to a base station, a received timing difference (RTD) capability of the UE. The RTD capability indicates a RTD supported by the UE between a first cell and a timing reference cell. The UE receives, from the base station, an instruction of a configuration, which is determined according to the RTD capability of the UE. The UE performs the configuration according to the instruction. The RTD capability of the UE may include a parameter indicating the UE supporting advanced RTD capability or limited RTD capability.