Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece having an interconnect structure that includes a first conductive feature, a second conductive feature disposed beside the first conductive feature, and an inter-level dielectric disposed between the first conductive feature and the second conductive feature. A conductive material of an etch stop layer is selectively deposited on the first conductive feature and on the second conductive feature without depositing the conductive material on the inter-level dielectric, and the inter-level dielectric is removed to form a gap between the first conductive feature and the second conductive feature.

Abstract: The present invention relates to a system for coordinating operation control and operation maintenance for an urban rail transit and a method using the same, where the system includes: an intelligent operation maintenance subsystem and an intelligent operation control subsystem, the intelligent operation maintenance subsystem and the intelligent operation control subsystem include coordination linkage engine modules respectively, and the intelligent operation maintenance subsystem synchronizes, by using the coordination linkage engine modules, a fault handling plan to the intelligent operation control subsystem. Compared with the prior art, the present invention has the advantages of scientific and reasonable dispatching decision-making, high efficiency and high intelligence.

Abstract: Embodiments of the present disclosure disclose a heating body sensing method, apparatus, device, and storage medium. A detection temperature is acquired by receiving a first detection signal, the change of a heat source is acquired according to a receiving state of a second detection signal, and a sensing signal is generated according to the first detection signal and the receiving state of the second detection signal to determine the presence condition of a heating body. Therefore, the sensing cost of the heating body may be reduced, and the sensing efficiency may be improved.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a redistribution layer including a first conductive feature and a second conductive feature, a first contact feature disposed over and electrically coupled to the first conductive feature, a second contact feature disposed over and electrically coupled to the second conductive feature, and a passivation feature extending from between the first conductive feature and the second conductive feature between the first contact feature and the second contact feature. The passivation feature includes a dielectric feature and a dielectric layer. The dielectric layer is disposed on a planar top surface of the dielectric feature and a composition of the dielectric feature is different from a composition of the dielectric layer.

Abstract: A method and system of real-time determination of control parameters for generating a plasma jet with a specific chemical composition is disclosed. The system includes a controller coupled to a gas source and a voltage source to generate a plasma jet having the desired chemical composition via control parameters for the gas and voltage. An optical emission spectroscopy sensor detects spectral data from the plasma jet. A diagnostic neural network module is trained to output chemical compositions and energy distribution of gasses of the gas source from an input of spectral data. The detected spectral data is input to the diagnostic neural network. A control neural has an input of the chemical compositions and energy distribution output by the diagnostic neural network and an output of the control parameters. The control neural network is trained via chemical compositions output from the diagnostic neural network and the desired chemical composition.

Abstract: A negative electrode for a secondary battery including: a negative electrode current collector; and a negative electrode active material layer present on the negative electrode current collector. The negative electrode active material layer includes a negative electrode active material, wherein the negative electrode active material for a secondary battery includes natural graphite, and has a sphericity of 0.58 to 1, a tap density of 1.08 g/cc to 1.32 g/cc, and Dmax?Dmin of 16 ?m to 19 ?m, wherein Dmax?Dmin is a difference between a maximum particle diameter Dmax and a minimum particle diameter Dmin in a particle size distribution.

Abstract: A semiconductor device includes a fin structure protruding from an isolation insulating layer disposed over a substrate and having a channel region, a source/drain region disposed over the substrate, a gate dielectric layer disposed on the channel region, and a gate electrode layer disposed on the gate dielectric layer. The gate electrode includes a lower portion below a level of a top of the channel region and above an upper surface of the isolation insulating layer, and a width of the lower portion is not constant.

Abstract: A negative electrode and a secondary battery including the negative electrode. The negative electrode including a current collector and a negative electrode active material layer, wherein the negative electrode active material layer includes negative electrode active material particles, the negative electrode active material particles include natural graphite particles and a carbon coating layer disposed on the natural graphite particles. The negative electrode active material particles have a D50 of 6 ?m to 9.2 ?m and a half-width of 5.0 ?m to 5.5 ?m based on a particle size distribution, and the specific surface area of the negative electrode active material particles is from 0.6 m2/g to 2.2 m2/g.

Abstract: A smart power stage module includes an output stage and a driving circuit. The output stage includes a low-side switch and provides an output current. The driving circuit controls an operation of the output stage according to a PWM signal. The driving circuit includes a determination circuit generating a control signal according to the PWM signal and a signal combination circuit providing a current monitoring signal representing the output current. The current monitoring signal is a combination of a simulated current signal and an actual sensed current signal. The signal combination circuit includes a switching circuit switching according to the control signal to adjust a proportion of simulated current signal and actual sensed current signal. When the on-time period part of low-side switch is shorter than a default time period, the switching circuit shortens duration of simulated current signal in the current monitoring signal according to the control signal.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The method may be performed by a UE. In certain configurations, the UE performs a procedure resulting in a status change of a first pre-configured measurement gap (pre-MG) of a pre-MG activation procedure. The UE determines whether the pre-MG activation procedure collides with or is overlapped with an overlapping gap. In response to determining that the pre-MG activation procedure collides with or is overlapped with the overlapping gap, the UE configures a pre-MG activation delay for the first pre-MG after an end of the overlapping gap, and performs the pre-MG activation procedure in the first pre-MG after the pre-MG activation delay.

Abstract: A probe card for use in circuit probe testing and methods of fabrication thereof. The probe card includes a circuit board, an interposer structure that is mounted to the circuit board, and a probe structure mounted to the interposer structure and including a probe substrate, a redistribution layer over the probe substrate, and a plurality of probe pins over the redistribution layer. The interposer structure may include a plurality of elastically-deformable interposer pins electrically connecting the circuit board to the probe substrate. The center-to-center spacing (i.e., pin pitch) between the interposer pins may be greater than the center-to-center spacing (i.e., a second pin pitch) between the probe pins. A probe card in accordance with various embodiments may enable circuit probe testing of a device-under-test with a pitch between adjacent probe pins that is less than 50 ?m.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece having an interconnect structure that includes a first conductive feature, a second conductive feature disposed beside the first conductive feature, and an inter-level dielectric disposed between the first conductive feature and the second conductive feature. A conductive material of an etch stop layer is selectively deposited on the first conductive feature and on the second conductive feature without depositing the conductive material on the inter-level dielectric, and the inter-level dielectric is removed to form a gap between the first conductive feature and the second conductive feature.

Abstract: A reference voltage generator circuit includes: a first transistor and a second transistor, wherein the first transistor and the second transistor are coupled with each other and are located on a substrate, wherein the first transistor has a first conduction threshold voltage and a first rated voltage, wherein the second transistor has a second conduction threshold voltage and a second rated voltage, wherein the first rated voltage is higher than the second rated voltage; wherein the reference voltage generator circuit is configured to generate a bandgap reference voltage with temperature compensation according to a difference between the first conduction threshold voltage and the second conduction threshold voltage.

Abstract: A group user migration method includes: creating a target graphic code and a corresponding first group in a first application in response to a group user migration request, the group user migration request being used for requesting to migrate a user in any group in a second application to a group in the first application; sharing the target graphic code to a target group in the second application in response to a sharing request for the target graphic code; determining a group to which the user belongs in the second application in response to a request of any user in the second application for joining the first group; and joining the user to the first group of the first application in response to determining that the user belongs to the target group.

Abstract: Various solutions for global navigation satellite system (GNSS) operations with respect to user equipment and network node in mobile communications are described. An apparatus may transmit a GNSS position fix time duration and a GNSS validity duration to a network node during an initial access. The apparatus may receive a configuration based on the GNSS position fix time duration and the GNSS validity duration from the network node in a connected mode. The apparatus may perform a GNSS measurement based on the configuration. The apparatus may transmit a new GNSS validity duration to the network node in the connected mode in an event that the apparatus completes the GNSS measurement.

Abstract: A method of activating multiple secondary cells can include receiving on a primary cell (PCell) at a user equipment (UE) a first medium access (MAC) control element (CE) for activating a first secondary cell (SCell) and a second SCell for the UE in a wireless communication system. The first and second SCells can operate in a same band. No active serving cell operates on the same band for the UE. In response to that the first SCell is a known SCell, the second SCell is an unknown SCell, and both the first and second SCells operate in the same band that is a frequency range 2 (FR2) band, the first and second SCells can be activated in parallel without performing cell search and reference signal received power (RSRP) measurement and reporting over the first and second SCells.

Abstract: A semiconductor device includes a fin structure protruding from an isolation insulating layer disposed over a substrate and having a channel region, a source/drain region disposed over the substrate, a gate dielectric layer disposed on the channel region, and a gate electrode layer disposed on the gate dielectric layer. The gate electrode includes a lower portion below a level of a top of the channel region and above an upper surface of the isolation insulating layer, and a width of the lower portion is not constant.

Abstract: An ammonia fuel cell system capable of rapid adsorption-and-desorption switching by ammonia self-evaporation includes an ammonia decomposition reactor; an ammonia tank; a first heat exchanger; a fuel tank; a first blower; a second heat exchanger; an adsorption column device; a fuel cell; a gas circulation system; and an exhaust gas combustion system, wherein an outlet of the ammonia tank connects with an ammonia gas inlet of the ammonia decomposition reactor, wherein a decomposition gas outlet of the ammonia decomposition reactor, through the first heat exchanger, connects with an adsorption inlet of the adsorption column device, wherein a product produced by decomposition of ammonia gas in the ammonia decomposition reactor preheats a raw ammonia gas via the first heat exchanger, wherein the fuel tank connects with the ammonia decomposition reactor for feeding a fuel gas to the ammonia decomposition reactor.