Patents by Inventor Li-Lin Su
Li-Lin Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9935006Abstract: The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.Type: GrantFiled: March 2, 2017Date of Patent: April 3, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsien-Chang Wu, Li-Lin Su
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Publication number: 20170287842Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed over a substrate. A first pattern and a second pattern are formed in the first interlayer dielectric layer. The first pattern has a width greater than a width of the second pattern. A first metal layer is formed in the first pattern and the second pattern. A second metal layer is formed in the first pattern. A planarization operation is performed on the first and second metal layers so that a first metal wiring by the first pattern and a second metal wiring by the second pattern are formed. A metal material of the first metal layer is different from a metal material of the second metal layer. The first metal wiring includes the first and second metal layers and the second metal wiring includes the first metal layer but does not include the second metal layer.Type: ApplicationFiled: June 23, 2017Publication date: October 5, 2017Inventors: Shih-Kang FU, Hsien-Chang WU, Li-Lin SU, Ming-Han LEE, Shau-Lin SHUE
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Patent number: 9721894Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed over a substrate. A first pattern and a second pattern are formed in the first interlayer dielectric layer. The first pattern has a width greater than a width of the second pattern. A first metal layer is formed in the first pattern and the second pattern. A second metal layer is formed in the first pattern. A planarization operation is performed on the first and second metal layers so that a first metal wiring by the first pattern and a second metal wiring by the second pattern are formed. A metal material of the first metal layer is different from a metal material of the second metal layer. The first metal wiring includes the first and second metal layers and the second metal wiring includes the first metal layer but does not include the second metal layer.Type: GrantFiled: November 28, 2016Date of Patent: August 1, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Kang Fu, Hsien-Chang Wu, Li-Lin Su, Ming-Han Lee, Shau-Lin Shue
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Publication number: 20170207167Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: ApplicationFiled: April 3, 2017Publication date: July 20, 2017Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Publication number: 20170178957Abstract: The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.Type: ApplicationFiled: March 2, 2017Publication date: June 22, 2017Inventors: Hsien-Chang Wu, Li-Lin Su
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Patent number: 9614052Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: GrantFiled: September 11, 2015Date of Patent: April 4, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Publication number: 20170092591Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed over a substrate. A first pattern and a second pattern are formed in the first interlayer dielectric layer. The first pattern has a width greater than a width of the second pattern. A first metal layer is formed in the first pattern and the second pattern. A second metal layer is formed in the first pattern. A planarization operation is performed on the first and second metal layers so that a first metal wiring by the first pattern and a second metal wiring by the second pattern are formed. A metal material of the first metal layer is different from a metal material of the second metal layer. The first metal wiring includes the first and second metal layers and the second metal wiring includes the first metal layer but does not include the second metal layer.Type: ApplicationFiled: November 28, 2016Publication date: March 30, 2017Inventors: Shih-Kang FU, Hsien-Chang WU, Li-Lin SU, Ming-Han LEE, Shau-Lin SHUE
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Patent number: 9589897Abstract: The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.Type: GrantFiled: August 18, 2015Date of Patent: March 7, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsien-Chang Wu, Li-Lin Su
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Publication number: 20170053876Abstract: The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.Type: ApplicationFiled: August 18, 2015Publication date: February 23, 2017Inventors: Hsien-Chang Wu, Li-Lin Su
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Patent number: 9530737Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed over a substrate. A first pattern and a second pattern are formed in the first interlayer dielectric layer. The first pattern has a width greater than a width of the second pattern. A first metal layer is formed in the first pattern and the second pattern. A second metal layer is formed in the first pattern. A planarization operation is performed on the first and second metal layers so that a first metal wiring by the first pattern and a second metal wiring by the second pattern are formed. A metal material of the first metal layer is different from a metal material of the second metal layer. The first metal wiring includes the first and second metal layers and the second metal wiring includes the first metal layer but does not include the second metal layer.Type: GrantFiled: September 28, 2015Date of Patent: December 27, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Kang Fu, Hsien-Chang Wu, Li-Lin Su, Ming-Han Lee, Shau-Lin Shue
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Publication number: 20160064517Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: ApplicationFiled: September 11, 2015Publication date: March 3, 2016Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Patent number: 9136206Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: GrantFiled: July 25, 2012Date of Patent: September 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Publication number: 20140027822Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: ApplicationFiled: July 25, 2012Publication date: January 30, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Patent number: 8252690Abstract: A method of forming a seed layer of an interconnect structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a first deposition step to form the seed layer; and in-situ performing a first etch step to remove a portion of the seed layer. The method may further includes additional deposition and etch steps for forming the seed layer.Type: GrantFiled: February 14, 2008Date of Patent: August 28, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Lin Su, Cheng-Lin Huang, Shing-Chyang Pan, Ching-Hua Hsieh
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Patent number: 8034709Abstract: Provided is a method for forming a composite barrier layer with superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer generally form boundaries with dielectric materials and crystalline layers generally form boundaries with conductive materials such as interconnect materials.Type: GrantFiled: October 10, 2008Date of Patent: October 11, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Lin Huang, Ching-Hua Hsieh, Hsien-Ming Lee, Shing-Chyang Pan, Chao-Hsien Peng, Li-Lin Su, Jing-Cheng Lin, Shao-Lin Shue, Mong-Song Liang
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Patent number: 7704886Abstract: A method of forming an integrated circuit structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a first deposition step to form a seed layer in a first chamber; and performing a first etch step to remove a portion of the seed layer. The method may further include performing a second deposition step to increase the thickness of the seed layer. At least one of the first etch step and the second deposition step is performed in a second chamber different from the first chamber.Type: GrantFiled: February 14, 2008Date of Patent: April 27, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Lin Su, Shing-Chyang Pan, Cheng-Lin Huang, Ching-Hua Hsieh
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Publication number: 20090209098Abstract: A method of forming an integrated circuit structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a first deposition step to form a seed layer in a first chamber; and performing a first etch step to remove a portion of the seed layer. The method may further include performing a second deposition step to increase the thickness of the seed layer. At least one of the first etch step and the second deposition step is performed in a second chamber different from the first chamber.Type: ApplicationFiled: February 14, 2008Publication date: August 20, 2009Inventors: Li-Lin Su, Shing-Chyang Pan, Cheng-Lin Huang, Ching-Hua Hsieh
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Publication number: 20090209106Abstract: A method of forming a seed layer of an interconnect structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a first deposition step to form the seed layer; and in-situ performing a first etch step to remove a portion of the seed layer. The method may further includes additional deposition and etch steps for forming the seed layer.Type: ApplicationFiled: February 14, 2008Publication date: August 20, 2009Inventors: Li-Lin Su, Cheng-Lin Huang, Shing-Chyang Pan, Ching-Hua Hsieh
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Publication number: 20090047780Abstract: Provided is a method for forming a composite barrier layer with superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer generally form boundaries with dielectric materials and crystalline layers generally form boundaries with conductive materials such as interconnect materials.Type: ApplicationFiled: October 10, 2008Publication date: February 19, 2009Inventors: Cheng-Lin Huang, Ching-Hua Hsieh, Hsien-Ming Lee, Shing-Chyang Pan, Chao-Hsien Peng, Li-Lin Su, Jing-Cheng Lin, Shao-Lin Shue, Mong-Song Liang
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Patent number: 7453149Abstract: A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer are generally disposed to form boundaries with dielectric materials and crystalline layers are generally disposed to form boundaries with conductive materials such as interconnect materials.Type: GrantFiled: December 28, 2004Date of Patent: November 18, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Lin Huang, Ching-Hua Hsieh, Hsien-Ming Lee, Shing-Chyang Pan, Chao-Hsien Peng, Li-Lin Su, Jing-Cheng Lin, Shao-Lin Shue, Mong-Song Liang