Patents by Inventor Li-Qun Xia

Li-Qun Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190221426
    Abstract: Amorphous silicon doped yttrium oxide films and methods of making same are described. Deposition of the amorphous silicon doped yttrium oxide film by thermal chemical vapor deposition or atomic layer deposition process are described.
    Type: Application
    Filed: January 14, 2019
    Publication date: July 18, 2019
    Inventors: Tatsuya E. Sato, Li-Qun Xia, Sean M. Seutter
  • Publication number: 20190189400
    Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.
    Type: Application
    Filed: December 14, 2018
    Publication date: June 20, 2019
    Inventors: Kenichi Ohno, Keiichi Tanaka, Li-Qun Xia, Tsutomu Tanaka, Dmitry A. Dzilno, Mario D. Silvetti, John C. Forster, Rakesh Ramadas, Mike Murtagh, Alexander V. Garachtchenko
  • Publication number: 20190157067
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.
    Type: Application
    Filed: November 19, 2018
    Publication date: May 23, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Li-Qun Xia
  • Patent number: 10273578
    Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: April 30, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Robert T. Trujillo, Kevin Griffin, Garry K. Kwong, Kallol Bera, Li-Qun Xia, Mandyam Sriram
  • Patent number: 10236198
    Abstract: Methods of processing a plurality of substrates using a processing chamber with bottom and top openings and a plurality of processing slots are provided. A substrate positioned on a carrier is loaded into a first end of a processing chamber body through the bottom opening. The carrier is moved through a plurality of processing slots to a top opening at a second end of the chamber body and then removed from the processing chamber through the top opening.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: March 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Banqiu Wu, Nag B. Patibandla, Toshiaki Fujita, Ralf Hofmann, Pravin K. Narwankar, Jeonghoon Oh, Srinivas Satya, Li-Qun Xia
  • Patent number: 10170298
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: January 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Patent number: 10147599
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: December 4, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • Patent number: 10134581
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: November 20, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Anchuan Wang
  • Publication number: 20180301333
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Application
    Filed: April 12, 2018
    Publication date: October 18, 2018
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Publication number: 20180291505
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Application
    Filed: June 12, 2018
    Publication date: October 11, 2018
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Publication number: 20180211833
    Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.
    Type: Application
    Filed: January 24, 2018
    Publication date: July 26, 2018
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Lala Zhu, Malcolm J. Bevan, Theresa Kramer Guarini, Wenbo Yan
  • Patent number: 10023958
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: July 17, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Patent number: 9984868
    Abstract: Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: May 29, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Woong Jae Lee, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty
  • Publication number: 20180130642
    Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 10, 2018
    Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
  • Publication number: 20180076023
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 15, 2018
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Publication number: 20180040470
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Application
    Filed: October 20, 2017
    Publication date: February 8, 2018
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • Patent number: 9875888
    Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: January 23, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Mark Saly
  • Publication number: 20170365491
    Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.
    Type: Application
    Filed: August 29, 2017
    Publication date: December 21, 2017
    Inventors: Banqiu Wu, Nag B. Patibandla, Toshiaki Fujita, Ralf Hofmann, Pravin K. Narwankar, Jeonghoon Oh, Srinivas Satya, Li-Qun Xia
  • Patent number: 9799511
    Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: October 24, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Ning Li, Mark Saly, David Thompson, Mihaela Balseanu, Li-Qun Xia
  • Publication number: 20170263438
    Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 14, 2017
    Inventors: Ning Li, Mihaela Balseanu, Li-Qun Xia, Dongqing Yang, Anchuan Wang