Abstract: A die attach procedure for SiC uses the scrubbing technique to bond a SiC die to a package. A first layer is formed on the SiC die. This first layer, preferably of nickel, bonds to the SiC die. A second layer, preferably amorphous silicon, is then formed on the first layer. The second layer bonds to the first layer, and forms a eutectic with the material, usually gold, plating the package when the SiC die is scrubbed onto the package.

Abstract: A method of aligning a gate and a source of a silicon carbide static induction transistor comprising the steps of depositing an oxide layer over the transistor, forming oxide spacers from the oxide layer where the oxide spacers are adjacent the source, depositing a metal layer over the transistor and removing the oxide spacers so that the resulting gates are accurately aligned with the source.

Abstract: A tool handle mounting structure including a tool head having a fixed coupling cap, a handle having a tubular front end fastened to the coupling cap by a screw joint, and a sleeve fixedly mounted around the tubular front end to hold a sliding lock, wherein when the sliding lock is moved forwards after the handle is coupled to the coupling cap of the tool head, the handle is locked; when the sliding lock is moved backwards, the handle is unlocked, and can be turned reversely and disconnected from the coupling cap of the tool head.

Abstract: An optical sensor head (400) for providing an optical sensor with a hyperhemispherical field of view is disclosed. The optical sensor head (400) includes first and second lenses (430 and 440), each of the lenses (430 and 440) having a planar surface (434 and 444) and a convex surface (432 and 434). The sensor head (400) further includes a film (420) positioned between the lenses (430 and 440) for splitting the light beams impinging thereon.

Abstract: An improved MOS photodetector having polysilicon gate material which is made more transparent to visible light by the addition of up to 50% carbon, and preferably about 10% carbon. The surfaces of the polysilicon-carbon gates are oxidized to form a silicon dioxide dielectric layer, thus eliminating the need to deposit a separate dielectric layer for isolation of adjacent gates in an overlapping gate array. The elimination of a separate dielectric layer permits all gates to be formed directly on the substrate dielectric layer, thus providing a uniform drive voltage requirement across the array.

Abstract: A process for forming an insulating layer of silicon dioxide in a silicon substrate that surrounds and electrically insulates a semiconductor device is disclosed herein. The process comprises the steps of forming a recess on the outer surface of the silicon substrate that encompasses the site of the semiconductor device by photo-resist patterned reactive ion etching, and then removing silicon on the surface of the resulting recess whose crystal structure has been damaged by the reactive ion etching. Next, dopant atoms are selectively deposited on the surface of the recess so that the surface of the recess might be rendered into a porous layer of silicon when immersed in hydrogen fluoride and subjected to an electrical current. Prior to the porousification step, silicon is epitaxially grown within the walls of the recess to form the site for a semiconductor device.