Abstract: A semiconductor device structure according to the present disclosure includes a source feature and a drain feature, at least one channel structure extending between the source feature and the drain feature, a gate structure wrapped around each of the at least one channel structure, a semiconductor layer over the gate structure, a dielectric layer over the semiconductor layer, a doped semiconductor feature extending through the semiconductor layer and the dielectric layer to be in contact with the source feature, a metal contact plug over the doped semiconductor feature, and a buried power rail disposed over the metal contact plug.

Abstract: An electronic device includes a substrate, a circuit layer, at least one electronic unit, a stress adjustment layer, and a buffer layer. The substrate has a first surface and a second surface opposite to each other and at least one side connected to the first surface and the second surface. The circuit layer is disposed on the first surface of the substrate. The at least one electronic unit is electronically connected to the circuit layer. The stress adjustment layer is disposed on the second surface of the substrate. The buffer layer surrounds the substrate, wherein the stress adjustment layer is located between the substrate and the buffer layer, and the buffer layer is in contact with the at least one side of the substrate.

Abstract: A circuit structure, an electronic device, and a manufacturing method of the electronic device are provided. The circuit structure includes a support layer, a base layer, and a circuit layer. The base layer is disposed on the support layer. The circuit layer is disposed on the base layer and includes a first conductive layer, a first insulating layer, and a second conductive layer. The first conductive layer is disposed on the base layer. The first insulating layer is disposed on the first conductive layer. The second conductive layer is disposed on the first insulating layer. The elongation of the support layer is smaller than the elongation of the base layer.

Abstract: Provided is a decoding method, including: acquiring coded data of a current block; determining that a height and a width of the current block are both less than or equal to a preset threshold and the current block is a luma block; acquiring a transform pair index corresponding to the current block from the coded data, and determining the transform pair corresponding to the current block based on the transform pair index, wherein the transform pair comprises a horizontal transform kernel and a vertical transform kernel.

Abstract: The invention relates to a process of converting methanol in a fluidized bed reactor comprising feeding a methanol-containing feedstock into a fluidized bed reactor, contacting the feedstock with a catalyst, to produce a product comprising ethylene and propylene under effective conditions; the fluidized bed reactor comprises a diluent-phase zone and a dense-phase zone, wherein the diluent-phase temperature difference between any regions of the diluent-phase zone having a methanol concentration of more than 0.1 wt % (preferably more than 0.01 wt %) in the fluidized bed reactor is controlled to be less than 20° C., and the dense-phase temperature difference between any regions in the dense-phase zone having a methanol concentration of more than 0.1 wt % (preferably more than 0.01 wt %) in the fluidized bed reactor is controlled to be less than 10° C.

Abstract: Disclosed are an atrial shunt apparatus and a mounting method thereof, an atrial implanting device, a medical system, a method for collecting activity information of a heart, and a medical device. This atrial shunt apparatus is used for shunting blood from a left atrium to a right atrium through a hole at an atrial septum of a patient. The atrial shunt apparatus includes a shunt part, the shunt part defines a shunt pathway, and the shunt pathway has a first opening and a second opening. The shunt pathway is configured to communicate with the left atrium and the right atrium through the first opening and the second opening respectively, the first opening is configured to be closer to a head of the patient than the second opening, and/or the first opening is configured to be closer to a front of a body of the patient relative to the second opening.

Abstract: The present invention relates to a group of IMB-C5 series compounds having anti-coronavirus activity and the application thereof. The structure of the IMB-C5 series compounds is as shown in formula (1). The application is an application of the IMB-C5 series compounds in preparing a drug. The drug is a drug for inhibiting coronavirus, and is preferably a drug for treating human coronavirus infection. The coronavirus is preferably human ?-coronavirus or human ?-coronavirus, especially novel coronavirus (SARS-COV-2).

Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: A touch display panel has a display area and a fan-out area located at a side of the display area. The display area includes a first display region and a second display region located around the first display region. The touch display panel includes a display substrate and a touch function layer. The display substrate has a display side, and the touch function layer is located on the display side of the display substrate. The touch function layer includes a plurality of touch electrodes and a plurality of touch leads. The plurality of touch electrodes are located in the first display region, and the plurality of touch leads are electrically connected to the plurality of touch electrodes and extend to the fan-out area through the second display region.

Abstract: Provided is a method for modifying a cell, which comprises the following steps: transfecting a target molecule and a screening marker molecule to a cell in a non-viral manner, so that the cell expresses the target molecule and the screening marker molecule. Also provided is a modified cell obtained using the method. The method can effectively enrich the desired cell and increase cell positivity with respect to the target molecule.

Abstract: Provided are a resource scheduling method, a resource determining method, an eNB, and a user equipment. The resource scheduling method for wireless communication is performed by the eNB. The wireless communication involves at least a first carrier and a second carrier. The resource scheduling method includes: transmitting a DCI in the first carrier to a UE to schedule downlink resources for a PDSCH of the second carrier, wherein the eNB is able to start transmitting a burst in the second carrier at a flexible time independent of the subframe boundaries of the second carrier after the second carrier is occupied by the eNB, and the DCI for a flexible PDSCH of the burst different from the normal PDSCH of the second carrier contains information on the time period scheduled for the flexible PDSCH. The flexible PDSCH and its corresponding RS can reuse the DwPTS subframe structure for minimal specification impact.

Abstract: A method for forming a surface-relief grating with a desired spatial variation of duty cycle in a layer of photoresist includes: providing a first mask bearing a high-resolution grating of linear features, arranging the first mask at a first distance from a substrate, providing a second mask bearing a variable-transmission grating of opaque and transparent linear features that has a designed spatial variation of duty cycle, arranging the second mask at a distance before the first mask such that the linear features of the variable-transmission grating are orthogonal to the linear features of the high-resolution grating, illuminating the second mask while varying the first distance according to displacement Talbot lithography and also displacing the second mask at an angle to its linear features such that there is substantially no component of modulation with the period of the variable-transmission grating in the energy density distribution that exposes the photoresist.

Abstract: Examples of an integrated circuit with an interface between a source/drain feature and a contact and examples of a method for forming the integrated circuit are provided herein. In some examples, a substrate is received having a source/drain feature disposed on the substrate. The source/drain feature includes a first semiconductor element and a second semiconductor element. The first semiconductor element of the source/drain feature is oxidized to produce an oxide of the first semiconductor element on the source/drain feature and a region of the source/drain feature with a greater concentration of the second semiconductor element than a remainder of the source/drain feature. The oxide of the first semiconductor element is removed, and a contact is formed that is electrically coupled to the source/drain feature. In some such embodiments, the first semiconductor element includes silicon and the second semiconductor element includes germanium.

Abstract: The present invention provides a negative electrode composite material, a preparation method thereof, a negative electrode and a lithium ion secondary battery. The negative electrode composite material comprises negative electrode active material particulates and Li2CO3 and LiOH at the surface of the negative electrode active material particulates, the negative electrode active material particulates comprise: particles containing silicon oxide and at least one lithium silicate selected from Li2SiO3 and Li2Si2O5; and a carbon coating layer coating at least a part of surface of the particles, based on the weight of the negative electrode active material particulates, the content of Li2CO3 is greater than about 0 wt % and less than about 0.01 wt %, and the content of LiOH is greater than about 0 wt % and less than about 0.01 wt %.

Abstract: A method includes receiving a structure having a dielectric layer over a conductive feature, wherein the conductive feature includes a second metal. The method further includes etching a hole through the dielectric layer and exposing the conductive feature and depositing a first metal into the hole and in direct contact with the dielectric layer and the conductive feature, wherein the first metal entirely fills the hole. The method further includes annealing the structure such that atoms of the second metal are diffused into grain boundaries of the first metal and into interfaces between the first metal and the dielectric layer. After the annealing, the method further includes performing a chemical mechanical planarization (CMP) process to remove at least a portion of the first metal.

Abstract: Provided are a culture medium and a culture method for human primary acute myeloid leukemia cells. The culture medium for human primary acute myeloid leukemia cells contains a glutamine additive, non-essential amino acids, human interleukin-6, human interleukin-7, human interleukin-3, recombinant human FLT3 Ligand, a recombinant human macrophage colony stimulating factor and a human stem cell factor. Acute myeloid leukemia cells can be cultured with higher amplification efficiency and longer in-vitro culture time by using the culture medium and culture method. Also provided are human primary acute myeloid leukemia cells cultured in vitro by using the culture medium, and the use thereof for curative effect evaluation and screening of drugs.

Abstract: The present invention provides a novel pan-RAF kinase inhibitor, comprising a compound of formula (I) or a pharmaceutically acceptable salt, solvate, ester, acid, metabolite or prodrug thereof. The present invention also provides a use or method of the compound of formula (I) in the treatment or prevention of a disorder related to the activity of RAF and/or RAS kinase.

Abstract: A natural language processing method and apparatus, a device, and a readable storage medium, where the method includes: obtaining a target sentence to be processed, and determining each entity in the target sentence (S101); for each entity in the target sentence, in response to the entity being present in a preset entity set, determining extended information for the entity, and adding the determined extended information after a location of the entity in the target sentence, to obtain an updated target sentence (S102); and inputting the updated target sentence to a bidirectional encoder representations from transformer (BERT) model, such that the BERT model performs a natural language processing task, where in a process in which the BERT model performs the natural language processing task, an attention score between extended information of any entity in the target sentence and another entity in the target sentence is adjusted to zero (S103).