Abstract: A display panel and a display device are provided. The display panel includes a pixel unit, a data line, and a connection element, the connection element includes a shielding portion, the shielding portion and the data line extend in the same direction; the pixel circuit includes a driving transistor and a first transistor, a first electrode of the first transistor is connected with the data line, a first electrode of the driving transistor is connected with a second electrode of the first transistor, the display panel further includes a semiconductor pattern and a fourth conductive pattern layer, the fourth conductive pattern layer is located on a side of the semiconductor pattern away from a base substrate, the data line and the shielding portion are located in the fourth conductive pattern, the data line includes two adjacent data lines, the shielding portion is located between the two adjacent data lines.

Abstract: A method for deep treatment of household waste leachate by a biochemical process is provided, including: arranging one anoxic tank and two aerobic tanks in series; introducing the household waste leachate into the primary anoxic reactor, and diluting the household waste leachate to an concentration acceptable to microorganisms; introducing the diluted household waste leachate into the primary aerobic reactor, and subjecting the diluted household waste leachate to an pre-nitrification reaction to obtain a reactant; introducing the reactant into the secondary aerobic reactor, and subjecting the reactant to a main nitrification reaction to convert ammonia nitrogen into nitrate nitrogen and nitrite nitrogen by nitrification of nitrobacteria; refluxing the nitrification liquid to the primary anoxic reactor, converting the nitrate nitrogen and nitrite nitrogen into nitrogen gas by denitrobacteria in the primary anoxic reactor, and discharging the nitrogen gas into atmosphere, thereby finishing an denitrification pr

Abstract: Provided are a user equipment and a wireless communication method for LAA. The user equipment comprises: a receiver operative to receive a UL grant which schedules a subframe for UL transmission; a first circuit operative to perform LBT; a transmitter operative to transmit a PUSCH in the scheduled subframe starting from one available starting position of multiple candidate starting positions in the scheduled subframe if the LBT is successful. According to present disclosure, it is possible to increase the possibility that PUSCH could be sent in the scheduled subframe after LBT.

Abstract: A method includes receiving a structure having a dielectric layer over a conductive feature, wherein the conductive feature includes a second metal. The method further includes etching a hole through the dielectric layer and exposing the conductive feature and depositing a first metal into the hole and in direct contact with the dielectric layer and the conductive feature, wherein the first metal entirely fills the hole. The method further includes annealing the structure such that atoms of the second metal are diffused into grain boundaries of the first metal and into interfaces between the first metal and the dielectric layer. After the annealing, the method further includes performing a chemical mechanical planarization (CMP) process to remove at least a portion of the first metal.

Abstract: A device includes a channel region, a gate structure over the channel region, a source/drain feature adjacent the channel region, an interlayer dielectric (ILD) layer disposed over the source/drain feature, and a source/drain contact extending through the ILD layer to electrically couple to the source/drain feature. The source/drain contact is spaced apart from the ILD layer by a metal-containing layer having a composition different from a composition of the source/drain contact. The device further includes a metal silicide layer disposed between the source/drain contact and the source/drain feature, and a nitridated metal silicide layer disposed between the metal silicide layer and the source/drain contact.

Abstract: Techniques and systems for generating resistivity images. A system includes an electromagnetic (EM) logging tool configured to generate EM propagation measurements during a drilling operation. The system also includes a processing system configured to be coupled to the EM logging tool, wherein the processing system is configured to calculate a resistivity image for a formation utilizing at least one EM propagation measurement of the EM propagation measurements and without use of an inversion technique or lookup table; and transmit the resistivity image for display on a display.

Abstract: A generating method, a system, and a device of a scanning image, and a computer-readable storage medium are provided. The method includes: scanning different positions of a target object, respectively, by changing a passing region of an imaging beam emitted from a scanning imaging source, obtaining a plurality of scanning data of the target object, and obtaining a scanning image corresponding to the target object based on the plurality of scanning data of the target object.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure includes a gate electrode separated from a substrate by a gate dielectric and a pair of source/drain regions disposed within the substrate on opposite sides of the gate electrode. A lower conductive plug is disposed through a lower inter-layer dielectric (ILD) layer and contacting a first source/drain region. A capping layer is disposed directly on the lower conductive plug. An upper inter-layer dielectric (ILD) layer is disposed over the capping layer and the lower ILD layer. An upper conductive plug is disposed through the upper ILD layer and directly on the capping layer.

Abstract: Disclosed are a display panel and a display device. The display panel includes: a pixel unit, including a pixel circuit and a light-emitting element, the pixel circuit includes a driving transistor and a threshold compensation transistor; a first power line configured to supply a first power supply voltage to the pixel circuit; a blocker, electrically connected with the first power line; and a first conductive structure, connected with the gate electrode of the driving transistor, the first channel and the second channel of the threshold compensation transistor are connected by a conductive connection portion; an area of an orthographic projection of a portion of the blocker overlapping with the first conductive structure on the base substrate is larger than an area of an orthographic projection of a portion of the blocker overlapping with the conductive connection portion on the base substrate.

Abstract: A method for manufacturing a semiconductor device includes: forming a lower metal contact in a trench of a first dielectric structure, the lower metal contact having a height less than a depth of the trench and being made of a first metal material; forming an upper metal contact to fill the trench and to be in contact with the lower metal contact, the upper metal contact being formed of a second metal material different from the first metal material and having a bottom surface with a dimension the same as a dimension of a top surface of the lower metal contact; forming a second dielectric structure on the first dielectric structure; and forming a via contact penetrating through the second dielectric structure to be electrically connected to the upper metal contact, the via contact being formed of a metal material the same as the second metal material.

Abstract: A display panel and a display device are provided. The display panel comprises a substrate, a plurality of sub-pixels, a plurality of data lines, a plurality of wiring structures and a plurality of pads. The substrate comprises a display area and a non-display area comprising a bending area. The sub-pixels and data lines are in the display area and electrically connected with each other. The wiring structures are in the bending area and electrically connected with the data lines. At least one wiring structure comprises a plurality of hollow patterns connected successively, each hollow pattern comprises a first conductive part and a second conductive part connected with each other. The plurality of pads are in the non-display area and located on a side of the plurality of wiring structures away from the display area and electrically connected with the plurality of wiring structures.

Abstract: Provided are wireless communication methods and devices. In one embodiment, a wireless communication method performed by a wireless communication device comprises: transmitting a data packet repeatedly in multiple subframes including at least one normal subframe and at least one special subframe to another wireless communication device, wherein the available resources in the special subframe are different from that in the normal subframe, the data packet includes multiple modulated symbols which are divided into multiple modulated-symbol sets, in each subframe, each OFDM symbol is mapped by one of the modulated-symbol sets, and in every subframe, the modulated symbols in the same modulated-symbol set are mapped onto REs in one OFDM symbol in a fixed order. In another embodiment, multiple repetitions of the data packet are transmitted in each subframe, and in each special subframe, different repetitions are mapped onto REs with cyclic shift.

Abstract: The present disclosure provides a visual data analysis method and device used for visual analysis for multiple types of data sources. By establishing connection relationships with various types of data sources, multiple types of data sources can be obtained in real time, and various types of data sources are combined and analyze in real time. The method includes: obtaining multiple types of data sources, and establishing a connection with each type of data source, wherein the type of data source is used to represent a source from which data is obtained; displaying, through a visual page, each piece of table information contained in each type of data source with which the connection is made.

Abstract: A semiconductor structure includes a substrate, a first silicide, and a second silicide. The substrate has a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type. The first silicide is on the first epitaxy region, the first silicide comprising a first metal and a second metal, and the second silicide is on the second epitaxy region. A work function of the first silicide is greater than a work function of the second silicide.

Abstract: Disclosed in the present invention a cold rolled steel plate for a galvanized steel plate, containing Fe and inevitable impurities, and also containing the following chemical elements, in mass percent: 0.18-0.25% of C, 1.5-2.0% of Si, 1.5-2.3% of Mn, and 0.01-0.06% of Nb. The microstructure of the cold rolled steel plate is bainite+tempered martensite+residual austenite, wherein the volume fraction of bainite and tempered martensite is great than or equal to 95%. Accordingly, also disclosed in the present invention is a manufacturing method for the galvanized steel plate, comprising the steps: (1) smelting and casting to obtain a steel billet; (2) hot rolling; (3) cold rolling; (4) annealing: the annealing soaking temperature is 890-920° C., the soaking and heat preservation time is 80-150 s, and then cooling is performed at a cooling rate of 30-100° C./s to reach 270-350° C.; (5) overaging: the overaging temperature is 450-475° C.

Abstract: An electronic device includes a transparent core substrate and a first buffer layer. The transparent core substrate includes a through hole, wherein the transparent core substrate includes a first transparent core layer and a second transparent core layer. The first transparent core layer includes a first sub-through hole. The second transparent core layer is bonded to the first transparent core layer, wherein the second transparent core layer includes a second sub-through hole, and the first sub-through hole overlaps the second sub-through hole to form the through hole. The first buffer layer is disposed in at least a part of the through hole.

Abstract: A pixel driving circuit is provided. The pixel driving circuit includes a storage capacitor having a first capacitor electrode and a second capacitor electrode; a driving transistor configured to generate a driving current; a switch configured to control connection or disconnection between a gate electrode of the driving transistor and the first capacitor electrode; and a reset transistor having a first electrode connected to an initialization signal line, a second electrode connected to the first capacitor electrode. The switch includes a transistor comprising a first electrode connected to the first capacitor electrode, a second electrode connected to a gate electrode of the driving transistor, and a gate electrode connected to a scan line. The reset transistor is an n-type transistor. The driving transistor and the transistor of the switch are p-type transistors.

Abstract: A wireless charging system for charging batteries (112) in a medical environment is provided. The wireless charging system may include a power transmitter and a power receiver. The power transmitter produces a strong near-distance magnetic field and transmits the magnetic field via a transmitting antenna to a power receiver. The power receiver may receive the transmitted magnetic field via a power receiver antenna. The converted electrical power may charge multiple rechargeable batteries (112) simultaneously with high efficiency.

Abstract: Provided is a novel PDGFR kinase inhibitor, comprising a compound of formula (I) or a pharmaceutically acceptable salt, solvate, ester, acid, metabolite or prodrug thereof. Further provided are use and a method of the compound of formula (I) for preventing or treating conditions associated with PDGFR kinase activity, particularly use and a method for preventing or treating conditions associated with PDGFR? and/or PDGFR? kinase activity.

Abstract: Various embodiments of the teachings herein include a WLAN communication method. An example includes: receiving a polling request message at a client from an access point; checking whether the client is a polled client; if the client is the polled client, then sending a polling response message from the client to the access point; entering a function execution time window, and, when a moment for executing a function is reached in the function window, executing the function at the client. The function window starts when the client sends the polling response and ends before a retention time window starts. The retention time window begins with a safety time window and ends after it is expected that a polling response message will next be sent. The safety time window includes a period before a next polling cycle starts not less than an execution time of a function about to be executed.