Patents by Inventor Li-Wei Chu
Li-Wei Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136226Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
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Patent number: 11961834Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.Type: GrantFiled: March 21, 2022Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin Peng, Li-Wei Chu, Ming-Fu Tsai, Jam-Wem Lee, Yu-Ti Su
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Patent number: 11935581Abstract: A circuit module with reliable margin configuration, may include a main circuit, a first auxiliary circuit and a second auxiliary circuit. When the first auxiliary circuit is on, the second auxiliary circuit may be on or off according to whether a control signal is of a first level or a second level. When the first auxiliary circuit and the second auxiliary circuit are both on, the first auxiliary circuit and the second auxiliary circuit may jointly cause an operation parameter of the main circuit to be a first value. When the first auxiliary circuit is on and the second auxiliary circuit is off, the first auxiliary circuit may cause the operation parameter to be a second value. An operation margin of the main circuit may cover a range between the first value and the second value.Type: GrantFiled: May 31, 2022Date of Patent: March 19, 2024Assignee: M31 TECHNOLOGY CORPORATIONInventors: Li-Wei Chu, Nan-Chun Lien
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Publication number: 20240088650Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.Type: ApplicationFiled: November 20, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Li-Wei Chu, Tao Yi Hung, Chia-Hui Chen, Wun-Jie Lin, Jam-Wem Lee
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Patent number: 11929363Abstract: In some embodiments, a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.Type: GrantFiled: March 21, 2022Date of Patent: March 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin Peng, Li-Wei Chu, Ming-Fu Tsai, Jam-Wem Lee, Yu-Ti Su
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Patent number: 11915976Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.Type: GrantFiled: June 27, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 11901353Abstract: An integrated circuit includes a T-coil circuit, a silicon-controlled rectifier (SCR), and a signal-loss prevention circuit. The T-coil circuit is coupled to an input/output (I/O) pad and an internal circuit. The SCR is coupled to the T-coil circuit and the internal circuit. The signal-loss prevention circuit is coupled to the T-coil circuit and the SCR. The signal-loss prevention circuit includes a resistor coupled to the T-coil circuit and the SCR. An electrostatic current flows through the resistor and turns on the SCR. The signal-loss prevention circuit may also include a diode circuit coupled to the T-coil circuit and the SCR. The diode circuit is configured to prevent signal loss.Type: GrantFiled: March 12, 2021Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Min Wu, Ming-Dou Ker, Chun-Yu Lin, Li-Wei Chu
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Publication number: 20240047453Abstract: A method of making a semiconductor device includes manufacturing doped zones in a first semiconductor material over a substrate. The method further includes forming an isolation structure between adjacent doped zones of the first semiconductor material. The method further includes manufacturing lines extending in a first direction over the doped zones of the first semiconductor material, wherein each of the lines has a line width measured along a second direction perpendicular to the first direction. The method further includes trimming the lines into line segments having ends over the isolation structure. The method further includes etching a transistor gate electrode over the substrate, wherein transistor gate electrode has a gate electrode width measured along the second direction, and wherein the line width is substantially similar to the gate electrode width.Type: ApplicationFiled: October 18, 2023Publication date: February 8, 2024Inventors: Li-Wei CHU, Wun-Jie LIN, Yu-Ti SU, Ming-Fu TSAI, Jam-Wem LEE
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Patent number: 11862968Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.Type: GrantFiled: April 22, 2022Date of Patent: January 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Li-Wei Chu, Tao Yi Hung, Chia-Hui Chen, Wun-Jie Lin, Jam-Wem Lee
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Publication number: 20230420565Abstract: A method for manufacturing a semiconductor structure includes: forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different materials; and performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.Type: ApplicationFiled: June 23, 2022Publication date: December 28, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Chi SU, Li-Wei CHU, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
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Publication number: 20230411160Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes an epitaxial structure and a metal silicide layer. The epitaxial structure includes a semiconductor material. The metal silicide layer is disposed on the epitaxial structure. The metal silicide layer includes the semiconductor material, a first metal material and a second metal material. An atomic size of the first metal material is greater than an atomic size of the second metal material, and a concentration of the first metal material in the metal silicide layer varies along a thickness direction.Type: ApplicationFiled: June 16, 2022Publication date: December 21, 2023Inventors: LI-WEI CHU, YU-HSIANG LIAO, HUNG-HSU CHEN, CHIH-WEI CHANG, MING-HSING TSAI, YING-CHI SU
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Patent number: 11837598Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.Type: GrantFiled: August 27, 2021Date of Patent: December 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Li-Wei Chu, Wun-Jie Lin, Yu-Ti Su, Ming-Fu Tsai, Jam-Wem Lee
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Publication number: 20230352060Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.Type: ApplicationFiled: July 12, 2023Publication date: November 2, 2023Inventors: Nan-Chun LIEN, Li-Wei CHU, Ting-Wei CHANG
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Publication number: 20230344221Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.Type: ApplicationFiled: April 22, 2022Publication date: October 26, 2023Applicant: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Li-Wei Chu, Tao Yi Hung, Chia-Hui Chen, Wun-Jie Lin, Jam-Wem Lee
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Publication number: 20230299576Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. When the first transistor is turned on by a detection signal, the first transistor is turned off.Type: ApplicationFiled: May 24, 2023Publication date: September 21, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin PENG, Yu-Ti SU, Chia-Wei HSU, Ming-Fu TSAI, Shu-Yu SU, Li-Wei CHU, Jam-Wem LEE, Chia-Jung CHANG, Hsiang-Hui CHENG
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Patent number: 11742000Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.Type: GrantFiled: November 9, 2021Date of Patent: August 29, 2023Assignee: M31 TECHNOLOGY CORPORATIONInventors: Nan-Chun Lien, Li-Wei Chu, Ting-Wei Chang
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Patent number: 11710962Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.Type: GrantFiled: May 29, 2022Date of Patent: July 25, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin Peng, Yu-Ti Su, Chia-Wei Hsu, Ming-Fu Tsai, Shu-Yu Su, Li-Wei Chu, Jam-Wem Lee, Chia-Jung Chang, Hsiang-Hui Cheng
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Publication number: 20230068649Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Li-Wei CHU, Wun-Jie LIN, Yu-Ti SU, Ming-Fu TSAI, Jam-Wem LEE
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Publication number: 20230040348Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.Type: ApplicationFiled: November 9, 2021Publication date: February 9, 2023Inventors: Nan-Chun LIEN, Li-Wei CHU, Ting-Wei CHANG
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Publication number: 20220399052Abstract: A circuit module with reliable margin configuration, may include a main circuit, a first auxiliary circuit and a second auxiliary circuit. When the first auxiliary circuit is on, the second auxiliary circuit may be on or off according to whether a control signal is of a first level or a second level. When the first auxiliary circuit and the second auxiliary circuit are both on, the first auxiliary circuit and the second auxiliary circuit may jointly cause an operation parameter of the main circuit to be a first value. When the first auxiliary circuit is on and the second auxiliary circuit is off, the first auxiliary circuit may cause the operation parameter to be a second value. An operation margin of the main circuit may cover a range between the first value and the second value.Type: ApplicationFiled: May 31, 2022Publication date: December 15, 2022Inventors: Li-Wei CHU, Nan-Chun LIEN