Patents by Inventor Li-Wei Chu

Li-Wei Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11901353
    Abstract: An integrated circuit includes a T-coil circuit, a silicon-controlled rectifier (SCR), and a signal-loss prevention circuit. The T-coil circuit is coupled to an input/output (I/O) pad and an internal circuit. The SCR is coupled to the T-coil circuit and the internal circuit. The signal-loss prevention circuit is coupled to the T-coil circuit and the SCR. The signal-loss prevention circuit includes a resistor coupled to the T-coil circuit and the SCR. An electrostatic current flows through the resistor and turns on the SCR. The signal-loss prevention circuit may also include a diode circuit coupled to the T-coil circuit and the SCR. The diode circuit is configured to prevent signal loss.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Min Wu, Ming-Dou Ker, Chun-Yu Lin, Li-Wei Chu
  • Publication number: 20240047453
    Abstract: A method of making a semiconductor device includes manufacturing doped zones in a first semiconductor material over a substrate. The method further includes forming an isolation structure between adjacent doped zones of the first semiconductor material. The method further includes manufacturing lines extending in a first direction over the doped zones of the first semiconductor material, wherein each of the lines has a line width measured along a second direction perpendicular to the first direction. The method further includes trimming the lines into line segments having ends over the isolation structure. The method further includes etching a transistor gate electrode over the substrate, wherein transistor gate electrode has a gate electrode width measured along the second direction, and wherein the line width is substantially similar to the gate electrode width.
    Type: Application
    Filed: October 18, 2023
    Publication date: February 8, 2024
    Inventors: Li-Wei CHU, Wun-Jie LIN, Yu-Ti SU, Ming-Fu TSAI, Jam-Wem LEE
  • Patent number: 11862968
    Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.
    Type: Grant
    Filed: April 22, 2022
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Li-Wei Chu, Tao Yi Hung, Chia-Hui Chen, Wun-Jie Lin, Jam-Wem Lee
  • Publication number: 20230420565
    Abstract: A method for manufacturing a semiconductor structure includes: forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different materials; and performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.
    Type: Application
    Filed: June 23, 2022
    Publication date: December 28, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Chi SU, Li-Wei CHU, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Publication number: 20230411160
    Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes an epitaxial structure and a metal silicide layer. The epitaxial structure includes a semiconductor material. The metal silicide layer is disposed on the epitaxial structure. The metal silicide layer includes the semiconductor material, a first metal material and a second metal material. An atomic size of the first metal material is greater than an atomic size of the second metal material, and a concentration of the first metal material in the metal silicide layer varies along a thickness direction.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 21, 2023
    Inventors: LI-WEI CHU, YU-HSIANG LIAO, HUNG-HSU CHEN, CHIH-WEI CHANG, MING-HSING TSAI, YING-CHI SU
  • Patent number: 11837598
    Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: December 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Li-Wei Chu, Wun-Jie Lin, Yu-Ti Su, Ming-Fu Tsai, Jam-Wem Lee
  • Publication number: 20230352060
    Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.
    Type: Application
    Filed: July 12, 2023
    Publication date: November 2, 2023
    Inventors: Nan-Chun LIEN, Li-Wei CHU, Ting-Wei CHANG
  • Publication number: 20230344221
    Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.
    Type: Application
    Filed: April 22, 2022
    Publication date: October 26, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Li-Wei Chu, Tao Yi Hung, Chia-Hui Chen, Wun-Jie Lin, Jam-Wem Lee
  • Publication number: 20230299576
    Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. When the first transistor is turned on by a detection signal, the first transistor is turned off.
    Type: Application
    Filed: May 24, 2023
    Publication date: September 21, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin PENG, Yu-Ti SU, Chia-Wei HSU, Ming-Fu TSAI, Shu-Yu SU, Li-Wei CHU, Jam-Wem LEE, Chia-Jung CHANG, Hsiang-Hui CHENG
  • Patent number: 11742000
    Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: August 29, 2023
    Assignee: M31 TECHNOLOGY CORPORATION
    Inventors: Nan-Chun Lien, Li-Wei Chu, Ting-Wei Chang
  • Patent number: 11710962
    Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.
    Type: Grant
    Filed: May 29, 2022
    Date of Patent: July 25, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin Peng, Yu-Ti Su, Chia-Wei Hsu, Ming-Fu Tsai, Shu-Yu Su, Li-Wei Chu, Jam-Wem Lee, Chia-Jung Chang, Hsiang-Hui Cheng
  • Publication number: 20230068649
    Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Inventors: Li-Wei CHU, Wun-Jie LIN, Yu-Ti SU, Ming-Fu TSAI, Jam-Wem LEE
  • Publication number: 20230040348
    Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.
    Type: Application
    Filed: November 9, 2021
    Publication date: February 9, 2023
    Inventors: Nan-Chun LIEN, Li-Wei CHU, Ting-Wei CHANG
  • Publication number: 20220399052
    Abstract: A circuit module with reliable margin configuration, may include a main circuit, a first auxiliary circuit and a second auxiliary circuit. When the first auxiliary circuit is on, the second auxiliary circuit may be on or off according to whether a control signal is of a first level or a second level. When the first auxiliary circuit and the second auxiliary circuit are both on, the first auxiliary circuit and the second auxiliary circuit may jointly cause an operation parameter of the main circuit to be a first value. When the first auxiliary circuit is on and the second auxiliary circuit is off, the first auxiliary circuit may cause the operation parameter to be a second value. An operation margin of the main circuit may cover a range between the first value and the second value.
    Type: Application
    Filed: May 31, 2022
    Publication date: December 15, 2022
    Inventors: Li-Wei CHU, Nan-Chun LIEN
  • Publication number: 20220384421
    Abstract: A semiconductor device is provided. The semiconductor device comprises a detection circuit electrically coupled between a first node and a second node. The semiconductor device comprises a discharge circuit electrically coupled between the first node and a third node. The semiconductor device comprises a biasing circuit electrically coupled between the second node and the third node. The discharge circuit and the biasing circuit are configured to electrically conduct the first node and the second node in response to receiving a first signal from the detection circuit through a fourth node. A first voltage difference exists between the third node and the fourth node.
    Type: Application
    Filed: May 28, 2021
    Publication date: December 1, 2022
    Inventors: TAO YI HUNG, LI-WEI CHU, WUN-JIE LIN, JAM-WEM LEE, KUO-JI CHEN
  • Patent number: 11516031
    Abstract: A PoE system includes a plurality of PoE devices and a hub that are coupled in a ring configuration through a plurality of network cables. The hub is coupled to two of the network cables, and provides electric power to at least one of the network cables that is coupled to the hub. Each of the PoE devices is coupled to two of the network cables, receives electric power from one of the two network cables, and supplies electric power to the other one of the two network cables. As a consequence, each of the PoE devices can be directly or indirectly powered by the hub.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: November 29, 2022
    Assignee: FLYTECH TECHNOLOGY CO., LTD.
    Inventors: Jian-Jia Wang, Shih-Hsuan Lin, Li-Wei Chu, Li-Chun Chou
  • Publication number: 20220329447
    Abstract: A PoE system includes a plurality of PoE devices and a hub that are coupled in a ring configuration through a plurality of network cables. The hub is coupled to two of the network cables, and provides electric power to at least one of the network cables that is coupled to the hub. Each of the PoE devices is coupled to two of the network cables, receives electric power from one of the two network cables, and supplies electric power to the other one of the two network cables. As a consequence, each of the PoE devices can be directly or indirectly powered by the hub.
    Type: Application
    Filed: August 27, 2021
    Publication date: October 13, 2022
    Inventors: Jian-Jia WANG, Shih-Hsuan LIN, Li-Wei CHU, Li-Chun CHOU
  • Publication number: 20220328350
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 13, 2022
    Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Publication number: 20220294212
    Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.
    Type: Application
    Filed: May 29, 2022
    Publication date: September 15, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Lin PENG, Yu-Ti SU, Chia-Wei HSU, Ming-Fu TSAI, Shu-Yu SU, Li-Wei CHU, Jam-Wem LEE, Chia-Jung CHANG, Hsiang-Hui CHENG
  • Publication number: 20220293583
    Abstract: An integrated circuit includes a T-coil circuit, a silicon-controlled rectifier (SCR), and a signal-loss prevention circuit. The T-coil circuit is coupled to an input/output (I/O) pad and an internal circuit. The SCR is coupled to the T-coil circuit and the internal circuit. The signal-loss prevention circuit is coupled to the T-coil circuit and the SCR. The signal-loss prevention circuit includes a resistor coupled to the T-coil circuit and the SCR. An electrostatic current flows through the resistor and turns on the SCR. The signal-loss prevention circuit may also include a diode circuit coupled to the T-coil circuit and the SCR. The diode circuit is configured to prevent signal loss.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 15, 2022
    Inventors: Wei-Min WU, Ming-Dou KER, Chun-Yu LIN, Li-Wei CHU