Patents by Inventor Li-Wei Chu
Li-Wei Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10930640Abstract: The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.Type: GrantFiled: April 29, 2020Date of Patent: February 23, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Feng Chang, Jam-Wem Lee, Li-Wei Chu, Po-Lin Peng
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Publication number: 20200411506Abstract: An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.Type: ApplicationFiled: September 14, 2020Publication date: December 31, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin Peng, Han-Jen Yang, Jam-Wem Lee, Li-Wei Chu
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Patent number: 10867987Abstract: An integrated circuit device with ESD protection includes a substrate with a well having a first conductivity type formed on the substrate. A drain region has at least one drain diffusion with a second conductivity type implanted in the well and at least one drain conductive insertion on the well. The drain conductive insertion is electrically connected to the drain diffusion and an I/O pad. A source region includes a plurality of source diffusions having the second conductivity type implanted in the well, and the source diffusions are electrically connected to a voltage terminal.Type: GrantFiled: September 29, 2017Date of Patent: December 15, 2020Inventors: Po-Lin Peng, Li-Wei Chu, Yi-Feng Chang, Jam-Wem Lee
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Publication number: 20200357691Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed.Type: ApplicationFiled: July 27, 2020Publication date: November 12, 2020Inventors: YU-HSIANG LIAO, YA-HUEI LI, LI-WEI CHU, CHUN-WEN NIEH, HUNG-YI HUANG, CHIH-WEI CHANG, CHING-HWANQ SU
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Patent number: 10777546Abstract: An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.Type: GrantFiled: December 29, 2016Date of Patent: September 15, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Lin Peng, Han-Jen Yang, Jam-Wem Lee, Li-Wei Chu
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Publication number: 20200258878Abstract: The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.Type: ApplicationFiled: April 29, 2020Publication date: August 13, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Feng CHANG, Jam-Wem LEE, Li-Wei CHU, Po-Lin PENG
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Patent number: 10727117Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.Type: GrantFiled: September 13, 2018Date of Patent: July 28, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yu-Hsiang Liao, Ya-Huei Li, Li-Wei Chu, Chun-Wen Nieh, Hung-Yi Huang, Chih-Wei Chang, Ching-Hwanq Su
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Patent number: 10643988Abstract: The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.Type: GrantFiled: August 23, 2019Date of Patent: May 5, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Feng Chang, Jam-Wem Lee, Li-Wei Chu, Po-Lin Peng
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Patent number: 10559245Abstract: A drive method is provided for driving a liquid crystal display and includes receiving an image to be displayed, which includes multiple image pixels; setting different weights for primary color components of each of multiple image pixels of the image; implementing color washout compensation to the image according to the weights set for the primary color components of each of the multiple image pixels by varying brightness levels of the primary color components of each of the image pixels of the image; and driving the liquid crystal display to display the image so compensated.Type: GrantFiled: November 25, 2017Date of Patent: February 11, 2020Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventors: Yu-Yeh Chen, Dongsheng Guo, Jiang Zhu, Lei Sun, Li-wei Chu, Jhen-wei He
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Publication number: 20200020583Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.Type: ApplicationFiled: July 13, 2018Publication date: January 16, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Hsiang CHAO, Min-Hsiu HUNG, Chun-Wen NIEH, Ya-Huei LI, Yu-Hsiang LIAO, Li-Wei CHU, Kan-Ju LIN, Kuan-Yu YEH, Chi-Hung CHUANG, Chih-Wei CHANG, Ching-Hwanq SU, Hung-Yi HUANG, Ming-Hsing TSAI
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Patent number: 10510282Abstract: A drive method is provided for driving a liquid crystal display and includes receiving an image to be displayed, which includes multiple image pixels; setting different weights for primary color components of each of multiple image pixels of the image; implementing color washout compensation to the image according to the weights set for the primary color components of each of the multiple image pixels by varying brightness levels of the primary color components of each of the image pixels of the image; and driving the liquid crystal display to display the image so compensated.Type: GrantFiled: November 25, 2017Date of Patent: December 17, 2019Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventors: Yu-Yeh Chen, Dongsheng Guo, Jiang Zhu, Lei Sun, Li-wei Chu, Jhen-wei He
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Publication number: 20190378832Abstract: The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.Type: ApplicationFiled: August 23, 2019Publication date: December 12, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Feng CHANG, Jam-Wem LEE, Li-Wei CHU, Po-Lin PENG
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Patent number: 10475365Abstract: A drive method is provided for driving a liquid crystal display and includes receiving an image to be displayed, which includes multiple image pixels; setting different weights for primary color components of each of multiple image pixels of the image; implementing color washout compensation to the image according to the weights set for the primary color components of each of the multiple image pixels by varying brightness levels of the primary color components of each of the image pixels of the image; and driving the liquid crystal display to display the image so compensated.Type: GrantFiled: November 25, 2017Date of Patent: November 12, 2019Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventors: Yu-Yeh Chen, Dongsheng Guo, Jiang Zhu, Lei Sun, Li-wei Chu, Jhen-wei He
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Patent number: 10446100Abstract: Provided is an array substrate, including a sequence controller and gate drivers, and each of the gate drivers includes a first adjustable resistor and a gate drive unit, and one end of the first adjustable resistor is coupled to a first voltage, and the other end of the first adjustable resistor is coupled to a first input end of the gate drive unit, and the sequence controller is coupled to a control end of the first adjustable resistor to adjust a resistance value of the first adjustable resistor to make voltage difference values among the gate drive units in a preset range. In the gate driver, a first adjustable resistor is added between the first voltage and the gate drive unit. By controlling the resistance value of the first adjustable resistor, the voltages of the adjacent gate drivers are the same to prevent the appearance of the horizontal boundary.Type: GrantFiled: December 22, 2016Date of Patent: October 15, 2019Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventors: Ping-sheng Kuo, Yu-yeh Chen, Li-wei Chu
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Patent number: 10411005Abstract: The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.Type: GrantFiled: March 28, 2018Date of Patent: September 10, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Feng Chang, Jam-Wem Lee, Li-Wei Chu, Po-Lin Peng
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Publication number: 20190273024Abstract: A method of making a semiconductor device that includes forming a dielectric stack over a substrate and patterning a contact region in the dielectric stack, the contact region having side portions and a bottom portion that exposes the substrate. The method also includes forming a dielectric barrier layer in the contact region to cover the side portions and forming a conductive blocking layer to cover the dielectric barrier layer, the dielectric stack, and the bottom portion of the contact region. The method can include forming a conductive layer over the conductive blocking layer and forming a conductive barrier layer over the conductive layer. The method can further include forming a silicide region in the substrate beneath the conductive layer.Type: ApplicationFiled: March 1, 2018Publication date: September 5, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ya-Huei Li, Li-Wei Chu, Yu-Hsiang Liao, Hung-Yi Huang, Chih-Wei Chang, Ching-Hwanq Su
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Patent number: 10394061Abstract: The present application discloses a liquid crystal display device driving method and a liquid crystal display device, the driving method including: receiving the image data entered into the timing controller; calculating an area in the display image corresponding to the image data having the coupling phenomenon exceeds a predetermined level; determining whether or not the area in the display image corresponding to the image data having the coupling phenomenon exceeds a predetermined area is greater than or equal to the predetermined area; when the area is greater than or equal to the predetermined area, a two rows inversion manner is adopted, wherein when the method of two rows inversion is adopted to drive the liquid crystal display device, the driving direction of the data signal S(n+2) and the data signal S(n+3) are in contrast at the same time, wherein n is zero or a positive even number.Type: GrantFiled: January 13, 2017Date of Patent: August 27, 2019Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventors: Ping-sheng Kuo, Li-wei Chu, Yu-yeh Chen, Jian Gao
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Publication number: 20190157141Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.Type: ApplicationFiled: September 13, 2018Publication date: May 23, 2019Inventors: YU-HSIANG LIAO, YA-HUEI LI, LI-WEI CHU, CHUN-WEN NIEH, HUNG-YI HUANG, CHIH-WEI CHANG, CHING-HWANQ SU
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Publication number: 20190148355Abstract: The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.Type: ApplicationFiled: March 28, 2018Publication date: May 16, 2019Applicant: Taiwan Semiconductor Manufactruring Co., Ltd.Inventors: Yi-Feng CHANG, Jam-Wem Lee, Li-Wei Chu, Po-Lin Peng
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Patent number: 10268606Abstract: A data storage device access method, a device and a system. The method includes receiving a mode switch control command by a first bus through a first interface of the control device; switching a second interface of the control device to a predetermined mode based on the received mode switch control command. In cases where the second interface is switched to the first mode in accordance with the mode switch control command, the other device connected to a second bus corresponding to the second interface, accesses the data storage device under the control of the control device via the second interface through the second bus. In cases where the second interface is switched to the second mode in accordance with the mode switch control command, the other device directly accesses the data storage device through the second bus without the control of the control device.Type: GrantFiled: July 12, 2016Date of Patent: April 23, 2019Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.Inventors: Jianjun Xie, Li-wei Chu, Yuhong Fu, Jian Gao