Abstract: A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

Abstract: In some embodiments, a field effect transistor structure includes a substrate, a fin structure and a gate structure. The fin structure is formed over the substrate. The fin structure includes a first channel region, a first source or drain region and a second source or drain region. The first source or drain region and the second source or drain region are formed on opposite ends of the first channel region, respectively. The well region is formed of the same conductivity type as the second source or drain region, connected to the second source or drain region, and extended to the substrate. The first gate structure wraps around the first channel region in the fin structure.

Abstract: Downsampling based display method and apparatus are provided. An input image including multiple pixels is obtained. At least two pixels neighboring with a to-be-calculated DS pixel on each of at least two directions from the pixels are obtained to get at least four first neighboring pixels. Theoretical values of each first neighboring pixel on the at least two directions are calculated. Errors of the theoretical values of each first neighboring pixel and a corresponding original value are obtained. Weight coefficients for calculating the DS pixel are determined according to the errors. An estimation value of the DS pixel is calculated according to the weight coefficients and the weighted cubic interpolation calculation model. As to the other DS pixels of target image, corresponding estimation values are calculated using the above steps, and then a downsampling processed image is obtained. The color aliasing is avoided and sharp image is obtained.

Abstract: An automatic detection method for defects of a display panel is disclosed, which comprises: acquiring a tag image, a mapped original image and a mapped tag image; dividing the mapped original image into a plurality of mapped original sub-images, and dividing the mapped tag image into a plurality of mapped tag sub-images; acquiring a normal area and a defective area of the mapped original sub-images; merging the mapped original sub-images to discriminate the normal area and the defective area of the mapped original sub-images; correcting the discriminated normal area and the discriminated defective area of the mapped original sub-images by using the mapped tag image and the tag image to acquire a defect location of the display panel. The automatic detection method for defects of the display panel can accurately acquire the location of the defect and the difference between the defective area and the normal area to quantify and discriminate the defects of the display panel.

Abstract: The present invention provides a temperature sensing circuit, which comprises a switching circuit, a charging circuit, and a judging circuit. The switching circuit receives a supply voltage for generating a switching signal. The charging circuit is coupled to the switching circuit and receives the supply voltage. The switching signal controls the charging circuit for generating a voltage signal according to the supply voltage. The judging circuit is coupled to the charging circuit for generating a judging signal according to the level of the voltage signal. The levels of the switching signal and the voltage signal are related to a temperature state; and the judging signal represents the temperature state. The temperature sensing circuit can be applied to the driving circuit of a display panel for detecting the temperature state. Hence, the level of the driving signal of the driving circuit can be adjusted for improving the image quality.

Abstract: A method of driving active-matrix organic light-emitting diode (AMOLED) panels includes: (A) dividing a current frame of a current image corresponding to an i-th color component into a plurality of sub-frames, wherein i?[1,N], and N is a total number of the color component; (B) obtaining a sequence of the sub-frames of a previous frame of a previous image corresponding to the i-th color component, wherein the previous frame has been divided into a plurality of sub-frames by the same way with the current frame; (C) determining the sequence of the sub-frames of the current frame in accordance with the sequence of the sub-frames of the previous frame, wherein the sequence of the sub-frames (SF) of the current image is same with or is different from that of the previous frame; and (D) controlling the panel to display in accordance with the sequence of the sub-frames of the current frame determined by corresponding color components.

Abstract: In some embodiments, a field effect transistor structure includes a substrate, a fin structure and a gate structure. The fin structure is formed over the substrate. The fin structure includes a first channel region, a first source or drain region and a second source or drain region. The first source or drain region and the second source or drain region are formed on opposite ends of the first channel region, respectively. The well region is formed of the same conductivity type as the second source or drain region, connected to the second source or drain region, and extended to the substrate. The first gate structure wraps around the first channel region in the fin structure.

Abstract: The present invention provides a drive method and a drive device of a liquid crystal display, and the drive method comprises: receiving an image to display; employing the original gray scale values of the respective primary color components of the respective image pixels of the image to display to respectively generate a first display gray scale value and a second display gray scale value; employing the first display gray scale value and the second display gray scale value to respectively control display brightnesses of two display pixels of the same color on a liquid crystal panel, wherein the first display gray scale value is larger than the second display gray scale value. With the aforesaid arrangement, the present invention can reduce the color washout under large view angle to promote the display effect of the large view angle.

Abstract: Pixel-based method and apparatus of obtaining a downsampled image are provided. The method includes: constructing a virtual image by an image super-resolution technology according to a resolution of the downsampled image; determining relational expressions between pixels of the virtual image and pixels of the downsampled image; calculating a MSE between the pixels of the virtual image and pixels of the original image based on the relational expressions; determining a coefficient matrix between the pixels of the downsampled image and the pixels of the original image under the condition of the MSE being at a minimum value; determining the pixels of the downsampled image according to the pixels of the original image and the coefficient matrix; and outputting the downsampled image. Accordingly, the present invention can obtain sharp image and avoid color aliasing.

Abstract: A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

Abstract: A method of grayscale compensation to defects on a display panel includes: (A) obtaining a set of coordination of the defect on the display panel, and determining a defect area where the defect locates based on the set of coordination; (B) obtaining a gamma curve of the defect, a gamma curve of a background of the defect area, and a standard gamma curve of the background of the display panel; (C) obtaining a standard gamma curve of the defect and a standard gamma curve of the background of the defect area; and (D) calculating a grayscale-compensation value for each grayscale of the defect, based on the standard gamma curve and the standard gamma curve of the background of the defect area. The present invention is to reduce calculation, and to achieve the best compensation to defects on a display panel.

Abstract: A method for image edge anti-aliasing with super-resolution is provided and used to achieve enlargement conversion from low resolution to high resolution, by applying the steps of: detecting a received image data and saving as an original edge pixel frame; enlarging the original edge pixel frame in double size along the horizontal and vertical directions, respectively; retaining the original edge pixel information; replacing pixels to be interpolated with a zero grayscale; and compensating the pixels to be interpolated which are temporarily replaced by the zero grayscale along edge directions of the original edge pixel, such that the jagged phenomenon of output picture is output picture is significantly decreased, such that the jagged phenomena of an output picture is significantly decreased, with a detailed image information is well-maintained. The method is simple, with fewer calculations and faster operating speed, the cost can be effectively reduced.

Abstract: A method of grayscale compensation to defects on a display panel includes: (A) obtaining a set of coordination of the defect on the display panel, and determining a defect area where the defect locates based on the set of coordination; (B) obtaining a gamma curve of the defect, a gamma curve of a background of the defect area, and a standard gamma curve of the background of the display panel; (C) obtaining a standard gamma curve of the defect and a standard gamma curve of the background of the defect area; and (D) calculating a grayscale-compensation value for each grayscale of the defect, based on the standard gamma curve and the standard gamma curve of the background of the defect area. The present invention is to reduce calculation, and to achieve the best compensation to defects on a display panel.

Abstract: A pulse width modulation device for use in an N-ports random access memory having a plurality of word line sets, wherein a specified word line set comprises N port word lines. The pulse width modulation device comprises a status detecting device and a clock signal generator. The status detecting device is coupled to the N port word lines having a first and a second port word line, and outputs a first control signal when both the voltage values of the first and second port word lines are within a first level range. The clock signal generator is coupled to the status detecting device and the specified word line set, and generates and outputs a first clock signal to the specified word line set, wherein a duration of the first clock signal kept within the first level range is variable in response to the first control signal.

Abstract: A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer.

Abstract: An electrostatic discharge (ESD) protection device is disclosed, which includes a substrate of a positive dopant type; a p-well defined in the substrate; a depletion inducing structure of a negative dopant type having a gap defined in a bottom portion thereof disposed in the p-well, and a n-channel device disposed in a planar encircled region defined by the depletion inducing structure. The well region is in connection with the substrate through the depletion inducing structure. Upon an ESD stress, the depletion inducing structure induces an expanded depletion region in the substrate under the well region, thus providing a substrate trigger mechanism that reduces the triggering voltage of the ESD protection device.

Abstract: A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

Abstract: A driving circuit of an active matrix/organic light emitting diode (AMOLED) includes a first semiconductor controllable switch, a second semiconductor controllable switch, an energy-storage capacitor, an organic light emitting diode, and a sequential control unit that divides a driving time of one frame of the organic light emitting diode into driving times of N subframes. An output end of the second semiconductor controllable switch is coupled to an anode of the organic light emitting diode, a source electrode of the first semiconductor controllable switch receives a data driving signal of the AMOLED, a gate electrode of the first semiconductor controllable switch receives a scan driving signal of the AMOLED, a drain electrode of the AMOLED is connected with a gate electrode of the second semiconductor controllable switch, and the energy-storage capacitor is connected in series between a source electrode and the gate electrode of the second semiconductor controllable switch.

Abstract: A multi-port SRAM module includes a cell array comprising a plurality of cells, each having a first port and a second port; a first word line which is coupled to a plurality of cells of a target row to open and close the first port; a second word line which is coupled to the cells of the target row to open and close the second port; and a switch, which is coupled to the first word line and the second word line and couples the second word line to a reference voltage level according to a voltage level of the first word line.

Abstract: A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer.