Patents by Inventor Li Yu

Li Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220208684
    Abstract: An interface of integrated circuit (IC) die includes a plurality of the contact elements formed as a contact element pattern corresponding to a parallel bus. The contact elements are arranged in an array of rows and columns and divided into a transmitting group and a receiving group. The contact elements of the transmitting group have a first contact element sequence and the contact elements of the receiving group have a second contact element sequence, the first contact element sequence is identical to the second contact element sequence. The contact elements with the first contact element sequence and the second contact element sequence are matched when the contact element pattern is geometrically rotated by 180° with respect to a row direction and a column direction.
    Type: Application
    Filed: December 28, 2020
    Publication date: June 30, 2022
    Applicants: Global Unichip Corporation, Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Hao Wang, Ting-Chin Cho, Igor Elkanovich, Amnon Parnass, Chia-Hsiang Chang, Tsai-Ming Yang, Yen-Chung T. Chen, Ting-Hsu Chien, Yuan-Hung Lin, Chao-Ching Huang, Li-Ya Tseng, Pei Yu, Jia-Liang Chen, Yen-Wei Chen, Chung-Kai Wang, Chun-Hsu Chen, Yu-Ju Chang, Li-Hua Lin, Zanyu Yang
  • Publication number: 20220203036
    Abstract: The invention provides a syringe for detecting pressure change. The syringe includes a barrel defining a reservoir for receiving a constituent, a piston movable within the reservoir and a plunger. The barrel further includes a proximal end and a distal end with an outlet, an engaging member with a pair of fingers formed on an outer periphery of the barrel and a rib extending from the outer periphery of the barrel and disposed proximally to the engaging member. The plunger includes a first plunger part, a second plunger part and a baseplate supporting the first and second plunger parts. The first plunger part is partially received by the reservoir and slidably engaged with the piston. The second plunger part further includes at least one stop ledge to which the fingers of the engaging member releasably latch, and the stop ledge formed on a periphery of the second plunger part, and a compartment for accommodating a first biasing member with first and second ends.
    Type: Application
    Filed: April 21, 2020
    Publication date: June 30, 2022
    Inventors: LI-YU LIN, WEN-FU LUO
  • Patent number: 11374093
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate, a source/drain contact disposed over the substrate, a first dielectric layer disposed on the source drain contact, an etch stop layer disposed on the first dielectric layer, and a source/drain conductive layer disposed in the etch stop layer and the first dielectric layer. The structure further includes a spacer structure disposed in the etch stop layer and the first dielectric layer. The spacer structure surrounds a sidewall of the source/drain conductive layer and includes a first spacer layer having a first portion and a second spacer layer adjacent the first portion of the first spacer layer. The first portion of the first spacer layer and the second spacer layer are separated by an air gap. The structure further includes a seal layer.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Lin-Yu Huang, Li-Zhen Yu, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11373878
    Abstract: A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material and a second material is revived. The first material has a first incubation time to a first etching chemistry. The second material has a second incubation time to the first etching chemistry. The first incubation time is shorter than the second incubation time. A first main etch to the semiconductor structure for a first duration by the first etching chemistry is performed. The first duration is greater than the first incubation time and shorter than the second incubation time.
    Type: Grant
    Filed: January 20, 2021
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Han-Yu Lin, Li-Te Lin, Tze-Chung Lin, Fang-Wei Lee, Yi-Lun Chen, Jung-Hao Chang, Yi-Chen Lo, Fo-Ju Lin, Kenichi Sano, Pinyen Lin
  • Patent number: 11374596
    Abstract: The disclosure discloses an algebraic decoding method and a decoder for a (n, n(n?1), n?1) permutation group code in a communication modulation system. The basic principle of the decoding method is: assuming that two code elements p(r1)=s1 and p(r2)=s2 can be correctly detected in a received real vector with a length of n, including their element values s1, s2 and position indices r1, r2 in the vector, an intermediate parameter w is determined by solving an equation (r1?r2)w=(s1?s2)(mod n); and each code element is calculated by w according to p(i)=(s1+(n?r1+i)w)(mod n), i=1, 2, . . . , n. The decoder is mainly composed of multiple n-dimensional registers, a w calculator, n code element calculators, and a code element buffer. In the disclosure, in a case where a receiver only correctly detects two code elements in a transmitted codeword with a length of n, the codeword can be correctly decoded by using the received information of the two code elements.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: June 28, 2022
    Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Li Peng, Si Jia Chen, Ying Long Shi, Ya Yu Gao, Bin Dai, Lin Zhang, Kun Liang, Bo Zhou
  • Publication number: 20220190090
    Abstract: Provided are a display panel and a display device. The display panel includes: a base substrate including a display area and a peripheral area; a plurality of sub-pixels; a driving circuit; a power line; a connection layer electrically connected to the power line and located on one side of the driving circuit and the power line away from the base substrate, an orthographic projection of the connection layer on the base substrate partially overlaps with that of the driving circuit on the base substrate, and a minimum distance between an edge of the orthographic projection of the connection layer on the base substrate close to the display area and an edge of an orthographic projection of an anode, which is closest to an edge of the display area of a plurality of anodes of the sub-pixels, on the base substrate ranges from 150 to 250 microns; and a cathode.
    Type: Application
    Filed: June 30, 2020
    Publication date: June 16, 2022
    Inventors: Jie Dai, Yi Qu, Pengfei Yu, Sen Du, Li Song, Lu Bai
  • Publication number: 20220185825
    Abstract: Provided are a salt form and a crystal form of adenosine A2A receptor antagonist, and preparation method therefor. Also provided is an application of the salt form or crystal form in the preparation of a medicine for A2A receptor-related diseases, the maleate salt in the salt form has a structure of formula (I).
    Type: Application
    Filed: March 27, 2020
    Publication date: June 16, 2022
    Inventors: Kevin X CHEN, Kai ZHOU, Yanxin YU, Boyu HU, Li ZHANG, Zhaoguo CHEN
  • Publication number: 20220188501
    Abstract: A method of manufacturing a transmission gate includes overlying a first active area with a first metal zero segment, the first active area including first and second PMOS transistors, overlying a second active area with a second metal zero segment, the second active area including first and second NMOS transistors, and configuring the first and second PMOS transistors and the first and second NMOS transistors as a transmission gate by forming three conductive paths. At least one of the conductive paths includes a first conductive segment perpendicular to the first and second metal zero segments, and the first and second metal zero segments have a first offset distance corresponding to three times a metal zero pitch.
    Type: Application
    Filed: March 8, 2022
    Publication date: June 16, 2022
    Inventors: Shao-Lun CHIEN, Pin-Dai SUE, Li-Chun TIEN, Ting-Wei CHIANG, Ting Yu CHEN
  • Patent number: 11360392
    Abstract: An illuminator includes a first facet mirror receiving and reflecting an exposure radiation, an adjustable shielding element disposed on the first facet mirror, the adjustable shielding element adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror, and a second facet mirror receiving and reflecting the exposure radiation reflected by the first facet mirror.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Chang Hsu, Chieh-Jen Cheng, Li-Jui Chen, Shang-Chieh Chien, Chao-Chen Chang, Ssu-Yu Chen
  • Patent number: 11359775
    Abstract: Disclosed is a plurality of LED packages that are connected in a parallel array. A plurality of parallel arrays can also be connected in series to form a light string. The LED packages present a standardized impedance in which the resistive values of a series resistor and a parallel resistor are selected to moderate the flow of current when the LEDs become either shorted or open circuited.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: June 14, 2022
    Assignee: Ledup Manufacturing Group Limited
    Inventors: Franco Li, Jing Jing Yu
  • Publication number: 20220179219
    Abstract: Provided is an augmented reality device. The augmented reality device includes a first projection assembly and a first display assembly. The first display assembly is disposed on a light exit side of the first projection assembly. The first projection assembly includes a first scanner, a first laser, and a first lens group. The first display assembly includes a first holographic diffraction grating and a first lens. An exposure device is also provided.
    Type: Application
    Filed: May 22, 2020
    Publication date: June 9, 2022
    Inventors: Li JIANG, Hong CAI, Chao YU, Hui MAO
  • Publication number: 20220175275
    Abstract: A lower limb rehabilitation system based on augmented reality and a brain computer interface includes a display, a plurality of motion sensors, a brain wave monitor, and an analysis platform. The display is configured to receive and play a virtual scene video to guide a user to perform gait rehabilitation training. The plurality of motion sensors is configured to sense gait data. The brain wave monitor is configured to record an electroencephalogram signal by detecting an electric current change in a brain wave of the user. The analysis platform is configured to compare the gait data with the virtual scene video to determine the accuracy of footsteps of the user and provide feedback. The analysis platform inputs the electroencephalogram signal to a machine learning model to quantify the electroencephalogram signal into an index value representing a lower limb motor function of the user.
    Type: Application
    Filed: November 29, 2021
    Publication date: June 9, 2022
    Inventors: CHIA-HSIN CHEN, LI-WEI KO, YI-JEN CHEN, WEI-CHIAO CHANG, BO-YU TSAI, KUEN-HAN YU
  • Publication number: 20220180606
    Abstract: A three-dimensional (3D) image dynamic correction evaluation and auxiliary design method for orthotics includes the following steps. 3D scanning information of the human body is obtained. A plurality of 2D images of the human body is obtained for identification, and the pixel values of the 2D images are calculated so as to synthesize an original 3D spine curve. The 2D images of the human body and the 3D scan information are synthesized. An image deformation prediction and correction method of body shape is used to generate a deformed body shape of the human body. A spine material properties and mechanical model prediction method is used to predict parameters of the position, direction and magnitude of the force applied by an orthotics to the human body according to the deformed body shape.
    Type: Application
    Filed: May 5, 2021
    Publication date: June 9, 2022
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Po-Fu YEN, Zhong-Yi HAUNG, Shang-Yi LIN, Tian-Li YU, Tzong-Ming WU, Tsung-Wen TSAI
  • Publication number: 20220179498
    Abstract: A computing device captures a live video of a user of the computing device and generates a user interface displaying the live video. The computing device detects a facial region of the user and tracks facial features within the facial region of the user. The computing device detects a presence of at least one finger in the live video with a threshold distance of a target facial feature and initiates a corresponding editing mode based on the target facial feature. The computing device edits an appearance of the target facial feature in the live video based on the editing mode and based on movement of the one or more fingers.
    Type: Application
    Filed: December 3, 2021
    Publication date: June 9, 2022
    Inventors: Tung Chia YU, Chang LI
  • Publication number: 20220181215
    Abstract: Processes to form differently-pitched gate structures are provided. An example method includes providing a workpiece having a substrate and semiconductor fins spaced apart from one another by an isolation feature, depositing a gate material layer over the workpiece, forming a patterned hard mask over the gate material layer, the patterned hard mask including differently-pitched elongated features, performing a first etch process using the patterned hard mask as an etch mask through the gate material layer to form a trench, performing a second etch process using the patterned hard mask as an etch mask to extend the trench to a top surface of the isolation feature, and performing a third etch process using the patterned hard mask to extend the trench into the isolation feature. The first etch process includes use of carbon tetrafluoride and is free of use of oxygen gas.
    Type: Application
    Filed: February 28, 2022
    Publication date: June 9, 2022
    Inventors: Chi-Sheng Lai, Wei-Chung Sun, Li-Ting Chen, Kuei-Yu Kao, Chih-Han Lin
  • Publication number: 20220183164
    Abstract: A display device is provided. The display device includes a display panel set having a peripheral zone, a backlight module including a frame, an adhesive material disposed between the peripheral zone of the display panel set and the frame, and a plurality of support elements disposed on the frame and in contact with the adhesive material.
    Type: Application
    Filed: November 9, 2021
    Publication date: June 9, 2022
    Inventors: Yao-Lin HUANG, Ta-Chin HUANG, Chou-Yu KANG, Li-Wei SUNG
  • Publication number: 20220181505
    Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.
    Type: Application
    Filed: January 11, 2021
    Publication date: June 9, 2022
    Inventors: Jian-Li Lin, Wei-Da Lin, Cheng-Guo Chen, Ta-Kang Lo, Yi-Chuan Chen, Huan-Chi Ma, Chien-Wen Yu, Kuan-Ting Lu, Kuo-Yu Liao
  • Patent number: 11354588
    Abstract: A method for detecting deviations between an event log and a process model includes converting the process model into a probability process model, the probability process model comprising multiple nodes in multiple hierarchies and probability distribution associated with the multiple nodes, a leaf node among the multiple nodes corresponding to an activity in the process model; detecting differences between at least one event sequence contained in the event log and the probability process model according to a correspondence relationship; and identifying the differences as the deviations in response to the differences exceeding a predefined threshold; wherein the correspondence relationship describes a correspondence relationship between an event in one event sequence of the at least one event sequence and a leaf node in the probability process model.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: June 7, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jing Li, Xiang Li, Haifeng Liu, Guo Tong Xie, Yi Qin Yu, Shi Lei Zhang
  • Patent number: 11353049
    Abstract: A rivet structure includes a female rivet plate and a male rivet plate. The female rivet plate defines an elongated countersunk hole. A size of the countersunk hole increases from a first side of the female rivet plate to a second side of the female rivet plate. The male rivet plate includes a rivet including a shaft portion and two head portions. The shaft portion extends from the male rivet plate. The two head portions are respectively arranged on opposite sides of the shaft portion on a side of the shaft portion facing away from the male rivet plate. The two head portions extend through the countersunk hole from the first side of the female rivet plate to the second side of the female rivet plate. The two head portions are configured to be stamped by a stamping member to fill in the countersunk hole.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: June 7, 2022
    Assignee: Fulian Precision Electronics (Tianjin) Co., LTD.
    Inventors: Chang-You Zhang, Li-Chao Ji, Tian-Yu Zhang
  • Publication number: 20220173224
    Abstract: A method includes forming a fin structure including a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked over a substrate. A dummy gate structure is formed across the fin structure. The exposed second portions of the fin structure are removed. A selective etching process is performed, using a gas mixture including a hydrogen-containing gas and a fluorine-containing gas, to laterally recess the first semiconductor layers. Inner spacers are formed on opposite end surfaces of the laterally recessed first semiconductor layers. Source/drain epitaxial structures are formed on opposite end surfaces of the second semiconductor layers. The dummy gate structure is removed to expose the first portion of the fin structure. The laterally recessed first semiconductor layers are removed. A gate structure is formed to surround each of the second semiconductor layers.
    Type: Application
    Filed: January 19, 2021
    Publication date: June 2, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC Nanjing Company Limited
    Inventors: Han-Yu LIN, Fang-Wei LEE, Kai-Tak LAM, Raghunath PUTIKAM, Tzer-Min SHEN, Li-Te LIN, Pinyen LIN, Cheng-Tzu YANG, Tzu-Li LEE, Tze-Chung LIN