Abstract: An integrated circuit is provided and includes a multi-bit cell having multiple bit cells disposed in multiple cell rows. The bit cells include M bit cells, M being positive integers. A first bit cell of the bit cells and a M-th bit cell of the bit cells are arranged diagonally in different cell rows in the multi-bit cell. The multi-bit cell includes first to fourth cell boundaries. The first and second boundaries extend in a first direction and the third and fourth boundaries extend in a second direction different from the first direction. The first bit cell and a second bit cell of the bit cells abut the third cell boundary, and the first bit cell and a (M/2+1)-th bit cell of the bit cells abut the first cell boundary.

Abstract: A semiconductor structure includes a first transistor, a second transistor, a first dummy source/drain, a third transistor, a fourth transistor, and a second dummy source/drain. The first transistor and a second transistor adjacent to the first transistor are at a first elevation. The first dummy source/drain is disposed at the first elevation. The third transistor and a fourth transistor adjacent to the third transistor, are at a second elevation different from the first elevation. The second dummy source/drain is disposed at the second elevation. The second transistor is vertically aligned with the third transistor. The first dummy source/drain is vertically aligned with a source/drain of the fourth transistor. The second dummy source/drain is vertically aligned with a source/drain of the first transistor. The gate structure between the second dummy source/drain and a source/drain of the third transistor is absent. A method for manufacturing a semiconductor structure is also provided.

Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A skin layer of a superconducting tape has a woven mesh structure and is disposed on a surface of a superconducting tape. The skin layer of a superconducting tape solves the problem where a vapor layer generated when a superconductor is in a normal resistive state greatly reduces the efficiency of a heat exchange between the superconductor and liquid nitrogen. Further provided are the superconducting tape and a superconducting coil.

Abstract: An embedded circuit board, made without gas bubbles or significant internal gaps according to a manufacturing method which is provided, includes an inner layer assembly, an embedded element, and first and second insulating elements. The inner layer assembly comprises a first main portion with opposing first and second surfaces and a first groove not extending to the second surface is positioned at the first surface. A first opening penetrates the second surface, and the first opening and the first groove are connected. The first groove carries electronic elements for embedment. The first insulating element covers the first surface and a surface of the embedded element away from the second surface. The second insulating element covers the second surface and extends into the first opening to be in contact with the embedded element.

Abstract: A semiconductor device includes one or more active semiconductor components, wherein a front side is defined over the semiconductor substrate and a back side is defined beneath the semiconductor substrate. A front side power rail is formed at the front side of the semiconductor device and is configured to receive a first reference power voltage. First and second back side power rails are formed on the back side of the semiconductor substrate and are configured to receive corresponding second and third reference power voltages. The first, second and third reference power voltages are different from each other.

Abstract: A semiconductor device, includes a first metal layer, a second metal layer, a drain/source contact and at least one conductive via. The first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor. The second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. The drain/source contact extends in the second direction and is connected to the second conductor. The at least one conductive via connects the first conductor and the second conductor through the third conductor.

Abstract: The present invention relates to the field of biomedicine, and in particular to an engineered migrasome, a method for preparing the engineered migrasome, a delivery system comprising the engineered migrasome, and a method for preparing the delivery system.

Abstract: Copper-tin-nickel brazing material prepared by alloys recycled from E-waste, preparation method therefor, and system thereof are provided. A preparation method for the copper-tin-nickel brazing material includes the following steps: (a) spreading nano-SiO2 on the bottom of crucible and then adding a crude copper-tin-iron-nickel alloy recycled from E-waste; (b) heating the crucible to melt the crude alloy into a metal liquid so that Zn and Pb in the metal liquid react with the SiO2 to form a slag that floats out; (c) introducing a refining gas to the bottom of metal liquid in step (b), thereby removing the scums or gases formed by Pb, Fe, S, and O in the metal liquid; (d) performing heat-preserving directional solidification on the metal liquid, to bias-aggregate the Fe and Sb at one end and remove the same to obtain a copper-based intermediate alloy; and smelting and powdering the copper-based intermediate alloy.

Abstract: A hinge and a mobile terminal to resolve poor use effect of a foldable electronic device. The hinge includes a main body, and a first folding assembly and a second folding assembly that are symmetrically disposed along the main body. When the first folding assembly and the second folding assembly are rotated toward each other, a length of the hinge can be extended, and an accommodation space for accommodating the flexible display can be formed. When the first folding assembly and the second folding assembly are rotated away from each other, the length of the hinge can be reduced, and a support surface for supporting the flexible display can be formed, so that the flexible display cannot be stretched, compressed, or the like during folding and unfolding, thereby improving the use effect and safety of the mobile terminal.

Abstract: Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor.

Abstract: An integrated circuit is provided and includes a multi-bit cell having multiple bit cells disposed in multiple cell rows. The bit cells include M bit cells, M being positive integers. A first bit cell of the bit cells and a M-th bit cell of the bit cells are arranged diagonally in different cell rows in the multi-bit cell. The multi-bit cell includes first to fourth cell boundaries. The first and second boundaries extend in a first direction and the third and fourth boundaries extend in a second direction different from the first direction. The first bit cell and a second bit cell of the bit cells abut the third cell boundary, and the first bit cell and a (M/2+1)-th bit cell of the bit cells abut the first cell boundary.

Abstract: A snow thrower includes a motor, an auger driven by the motor to rotate, a handle device for a user to operate, an auger housing for containing the auger and a frame for connecting the handle device and the auger housing. The auger housing is made of at least two different materials.

Abstract: A repairing method for micro-LED chip defective pixels is disclosed. By providing a main recess and a backup recess in each of sub-pixel areas of a substrate, wherein each of the main recesses is loaded with a main micro-LED chip, when all of the main micro-LED chips are detected for defective pixels, the backup recess in each of the sub-pixel areas where the defective pixel is detected is loaded with a backup micro-LED chip using a fluid mass transfer method, which improves the repair efficiency.

Abstract: A stretchable display panel and a method of producing the stretchable display panel are provided. The stretchable display panel has a driver integrated circuit occupying a small space in the present disclosure to reduce a required space for a circuit configured to drive a pixel unit to emit light, thereby benefiting the provision of spaces for arranging the pixel unit, so that the resolution of the stretchable display panel is increased.

Abstract: The disclosure provides a novel process and synthetic intermediates for making belzutifan, a HIF-2a inhibitor, useful for the treatment of certain VHL-related indications and cancer.

Abstract: A display panel, a manufacturing method thereof, and a display device are provided. The display panel includes a driving backplate, functional component groups, and micro-LED chips. The functional component groups are integrated in regions where the micro-LED chips are not disposed and are multiplexed as alignment marks. In a mass transfer process of the micro-LED chips, the alignment marks are prevented from additionally occupying pixel space by using part of functional components multiplexed as the alignment marks under a precondition of ensuring alignment accuracy.

Abstract: The present invention is directed to a process for preparing a compound of formula I-11 through multiple-step reactions:

Abstract: The present invention is directed to processes for preparing beta 3 agonists of Formula (I) and Formula (II) and their intermediates. The beta 3 agonists are useful in the treatment of certain disorders, including overactive bladder, urinary incontinence, and urinary urgency.

Abstract: Disclosed are capsid-modified rAAV expression vectors, as well as infectious virions, compositions, and pharmaceutical formulations containing them. Also provided are methods of preparing and using the disclosed capsid-protein-mutated rAAV constructs in a variety of diagnostic and therapeutic modalities, including, inter alia, as mammalian cell-targeting delivery agents, and as human gene therapy vectors. Also disclosed are large-scale production methods for capsid-modified rAAV expression vectors, viral particles, and infectious virions having improved transduction efficiencies over those of the corresponding, un-modified, rAAV vectors, as well as use of the disclosed compositions in the manufacture of medicaments for a variety of in vitro and/or in vivo applications.