Abstract: A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

Abstract: A heating device includes a resonant circuit, a detection unit and a control unit. The resonant circuit includes an inverter circuit and a resonant tank. The inverter circuit provides a resonant tank current and a resonant tank voltage. The resonant tank includes a heating coil, a resonant tank capacitor, a resonant tank equivalent inductor and a resonant tank equivalent impedance. The detection unit detects the resonant tank current and the resonant tank voltage to acquire associated parameters. The detection unit calculates an inductance of the resonant tank equivalent inductor according to a capacitance of the resonant tank capacitor, a resonant period and a first expression. The detection unit calculates an impedance value of the resonant tank equivalent impedance according to the inductance of the resonant tank equivalent inductor, a time difference, the resonant period, a reference current value, a negative peak current value and a second expression.

Abstract: A power detection circuit is provided for detecting current total input power of a resonant circuit. The power detection circuit includes a detection circuit and an estimation circuit. The detection circuit receives a current signal and obtains resonant-slot baseband power according to the current signal to generate the baseband power value. The current signal represents a resonant-slot current generated by the resonant circuit. The estimation circuit receives the baseband power value and estimates the current total input power according to the baseband power value to generate an estimated power value.

Abstract: A light-emitting assembly, a method for adjusting the light-emitting assembly, and a vehicle. The light-emitting assembly is used for a vehicle and includes a seat and a support, a light-emitting module being held on the support. A first adjustment mechanism is provided for performing a first adjustment on the light-emitting module, and a second adjustment mechanism is provided for performing a second adjustment on the light-emitting module. The support and the seat are pivotally connected together, so that the support can pivot around a horizontal axis under the action of the first adjustment mechanism.

Abstract: A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

Abstract: A voltage stabilizer is provided for stabilizing a gate-source voltage of a switching element, wherein a source of the switching element receives a first driving voltage. The voltage stabilizer includes a bipolar junction transistor, a first resistor and a second resistor. A base of the bipolar junction transistor receives a second driving voltage, a collector of the bipolar junction transistor is electrically connected to a gate of the switching element, a first terminal of the first resistor is electrically connected to the collector and the gate, a second terminal of the first resistor is electrically connected to the source of the switching element and receives the first driving voltage, a first terminal of the second resistor is electrically connected to an emitter of the bipolar junction transistor, and a second terminal of the second resistor receives a third driving voltage The bipolar junction transistor is operated in an active region.

Abstract: A semiconductor device includes a first silicon layer. The semiconductor device includes a plurality of first buried oxide layers embedded in the first silicon layer. The semiconductor device includes a second silicon layer disposed over the plurality of first buried oxide layers. Vertical distances between the plurality of first buried oxide layers and the second silicon layer, respectively, are different.

Abstract: An oscillation circuit including an amplifier, a feedback resistor and a first switch circuit is provided. The amplifier inverts and amplifies an oscillation signal received from an input terminal thereof to provide an output oscillation signal at an output terminal thereof. The feedback resistor is coupled between the input terminal and the output terminal, and coupled with the first switch circuit in parallel. The first switch circuit conducts the input terminal to the output terminal in one of the following situations: (1) an input voltage of the oscillation signal is higher than an output voltage of the output oscillation signal by at least a first threshold value; and (2) the output voltage is higher than the input voltage by at least a second threshold value. The first switch circuit has a first on-state resistance smaller than a resistance of the feedback resistor.

Abstract: A method for forming a chip package structure is provided. The method includes disposing a chip over a redistribution structure. The method includes forming a molding layer over the redistribution structure and adjacent to the chip. The method includes partially removing the molding layer to form a trench in the molding layer, and the trench is spaced apart from the chip.

Abstract: A method includes forming a first redistribution structure by depositing a first dielectric layer and forming first and second conductive features on the first dielectric layer, the second conductive feature being provided with a gap exposing the first dielectric layer. The method further includes depositing a second dielectric layer on the first and second conductive features; forming first and second openings in the second dielectric layer, the first opening exposing the first conductive feature and the second opening exposing the second conductive feature and the gap; forming a first via on the first conductive feature and partially in the first opening; forming a second via on the second conductive feature and partially in the second opening and the gap; attaching a die to the first redistribution structure adjacent the first via and the second via; and encapsulating the die, the first via, and the second via with an encapsulant.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: The invention provides a display device and a method of manufacturing a thin film transistor. The method of manufacturing a thin film transistor comprises: (A) providing a substrate; (B) forming a light shielding layer on the substrate, and patterning the light shielding layer to form a patterned light shielding layer; (C) forming a buffer layer on the substrate; (D) forming a semiconductor layer on the substrate, and patterning the semiconductor layer to form a patterned semiconductor layer; (E) forming an insulating layer on the substrate; and (F) forming a conductive layer on the substrate, and patterning the conductive layer to form a patterned conductive layer; wherein the same mask is used for patterning the light shielding layer and the semiconductor layer. Photoelectric effect of the thin film transistor outside the display region can be effectively avoided, while reducing the number of masks in the production process.

Abstract: A video processing method includes: decoding apart of a bitstream to generate a decoded frame, where the decoded frame is a projection-based frame that includes projection faces in a projection layout; and remapping sample locations of the projection-based frame to locations on the sphere, where a sample location within the projection-based frame is converted into a local sample location within a projection face packed in the projection-based frame; in response to adjustment criteria being met, an adjusted local sample location within the projection face is generated by applying adjustment to at least one coordinate value of the local sample location within the projection face, and the adjusted local sample location within the projection face is remapped to a location on the sphere; and in response to the adjustment criteria not being met, the local sample location within the projection face is remapped to a location on the sphere.

Abstract: A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion.

Abstract: Disclosed herein are a dual-targeted carbonic anhydrase IX complex, a contrast agent comprising the same, and a synthesizing method thereof. The dual-targeted carbonic anhydrase IX complex includes a carbonic anhydrase IX (CA9) binding peptide, a sulfonamide derivative, and a metal chelating agent. The dual-targeted carbonic anhydrase IX complex has potential for use as a molecular nuclear drug.

Abstract: A video decoding method includes: decoding a part of a bitstream to generate a decoded frame, and parsing at least one syntax element from the bitstream. The decoded frame is a projection-based frame that includes projection faces packed in a cube-based projection layout. At least a portion of a 360-degree content of a sphere is mapped to the projection faces via cube-based projection. The at least one syntax element is indicative of a guard band configuration of the projection-based frame.

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

Abstract: An example method of complementary consumer item selection includes: receiving, by a computer system, an image representing a first consumer item of a reference set of consumer items; identifying a target category of a complementary consumer item to be associated with the reference set of consumer items; generating, by a neural network processing the set of images, a feature embeddings representing the first consumer item in relation to the target category; selecting, using the feature embedding, from a set of available consumer items, a plurality of candidate consumer items associated with the target category; and selecting, among the plurality of candidate consumer items, the complementary consumer item to be associated with the reference set of consumer items.

Abstract: The present disclosure relates an integrated chip structure. The integrated chip structure includes a bottom electrode disposed within a dielectric structure over a substrate. A top electrode is disposed within the dielectric structure over the bottom electrode. A switching layer and an ion source layer are between the bottom electrode and the top electrode. A barrier structure is between the bottom electrode and the top electrode. The barrier structure includes a metal nitride configured to mitigate a thermal diffusion of metal during a high temperature fabrication process.

Abstract: The method is capable of effectively labeling the nanodiamonds with radioactive gallium and can be operated at room temperature, and therefore is convenient to operate and does not require further purification to obtain the nanodiamonds labelled with radioactive gallium with a purity of at least 99%