Abstract: A method for random access in a communication network may include detecting a first candidate beam at a UE, detecting a second candidate beam at the UE, transmitting, from the UE, one or more first messages of a random access procedure, and indicating, by the one or more first messages, the first candidate beam and the second candidate beam. Another method for random access in a communication network may include detecting a first candidate beam at a UE, detecting a second candidate beam at the UE, receiving, at the UE, traffic information for the first candidate beam and the second candidate beam, selecting the first candidate beam based on the traffic information, and transmitting, based on the selecting, a first message of a random access procedure using the first candidate beam. The traffic information comprises load information.

Abstract: A semiconductor device includes a substrate with a high voltage region and a low voltage region. A first deep trench isolation is disposed within the high voltage region. The first deep trench isolation includes a first deep trench and a first insulating layer filling the first deep trench. The first deep trench includes a first sidewall and a second sidewall facing the first sidewall. The first sidewall is formed by a first plane and a second plane. The edge of the first plane connects to the edge of the second plane. The slope of the first plane is different from the slope of the second plane.

Abstract: An IGBT device and a preparation method thereof are provided. The preparation method comprises steps A-E. The step A comprises preparing epitaxial layers. The step B comprises preparing a front terminal structure. The high-density trenches comprise cell active trenches, cell pseudo trenches, and scribe line trenches. The step C comprises preparing a front MOSFET structure having high-density trenches. The step D comprises preparing a circuit link layer and a passivation layer. The step E comprises preparing back structures of the IGBT device. The preparation method solves a warpage problem when producing IGBT devices on a large-size wafer. At the same time, a depth of a buffer layer of the IGBT device and a concentration of a first element in the buffer layer are easy to adjust, which fully meets requirements for trench density, trench type, and buffer layer, and improves a yield rate of the IGBT devices.

Abstract: A shortcut function enabling method and an electronic device, where the electronic device collects an air gesture of a user using a camera, recognize the air gesture of the user, obtain a facial feature of the user, and verify whether the facial feature is a facial feature from the user or a stored facial feature. When face verification of the user succeeds and the air gesture is a preset air gesture, an application or a shortcut function is quickly enabled.

Abstract: Methods and apparatuses are provided in which a user equipment (UE) is configured with a cell discontinuous transmission (DTX)/discontinuous reception (DRX) configuration defined by a DTX/DRX periodicity, a DTX/DRX starting slot or offset, and a DTX/DRX active period. The cell DTX/DRX configuration is enabled or disabled at the UE.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A RC-IGBT device and a preparation method thereof are provided. The preparation method includes steps A-E. The step A: includes preparing epitaxial layers. Specifically, the step A includes providing a semiconductor substrate, forming a first epitaxial layer on a surface of the semiconductor substrate, preparing reverse conductive regions in the first epitaxial layer, and forming a second epitaxial layer on the first epitaxial layer. The step B includes preparing a front terminal structure. The step C includes preparing a front MOSFET structure having high-density trenches. The step D includes preparing a circuit link layer and a passivation layer. The step E includes preparing back structures of the RC-IGBT device. In the preparation method, no backside photoetching process is required, which saves costs and reduces a risk of breakage of a wafer. The front terminal structure defines high-density trenches, which reduce a warpage degree of the wafer.

Abstract: Disclosed is the use of a nitrate and vitamin C microcapsule in the preparation of a drug for treating sicca syndrome. The microcapsule comprises a wall material and a core material encapsulated in the wall material, wherein the core material comprises vitamin C and nitrate, and a molar ratio of nitrate ions to vitamin C is 1:1 to 5:1.

Abstract: The present application discloses a conditional handover (CHO) processing method and apparatus, a related device, and a storage medium. The method comprises: a first network device determining that CHO configuration information is invalid and indicating to a terminal that the CHO configuration information is invalid.

Abstract: A light source module includes a casing, a first light source disposed in the casing to emit a first light, a first semi-transparent and semi-reflective mirror disposed in the casing and located on an optical path of the first light, and a heat dissipation member disposed in the casing and located on a second axis of the first semi-transparent and semi-reflective mirror. A first part of the first light passes through the first semi-transparent and semi-reflective mirror or is reflected by the first semi-transparent and semi-reflective mirror and then travels along a first axis. A second part of the first light is reflected by the first semi-transparent and semi-reflective mirror or passes through the first semi-transparent and semi-reflective mirror and then travels along a second axis. The first part is more than the second part. The second part of the first light is directed to the heat dissipation member.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a base station, configuration information indicating a wake-up signal (WUS) configuration associated with a discontinuous reception (DRX) cycle, wherein the WU'S configuration indicates one or more WUS occasions. The UE may identify one or more conditions. The UE may refrain from monitoring at least one WUS occasion, from the one or more WUS occasions, based at least in part on the identification of the one or more conditions. The UE may monitor one or more resources during an on duration associated with the DRX cycle. Numerous other aspects are described.

Abstract: A method for recovering C2 components in a methane-containing industrial gas includes the steps of (1) cooling a compressed methane-containing industrial gas and performing gas-liquid separation; (2) absorbing C2 components in the gas phase by using an absorbent to obtain an absorption rich liquid; (3) returning the absorption rich liquid to the compression in step (1) or mixing the absorption rich liquid with the liquid phase obtained in step (1) to obtain a mixed liquid, and depressurizing the mixed liquid or the absorption rich liquid; (4) performing methane desorption on the depressurized stream to obtain a rich absorbent, or performing second gas-liquid separation on the depressurized stream, followed by methane desorption on the second liquid phase to obtain a rich absorbent; and (5) desorbing and separating the rich absorbent to obtain a lean absorbent and an enriched gas, and recycling and reusing the lean absorbent.

Abstract: An electronic device may have peripheral conductive housing structures, a display frame, a support plate, a logic board, and an antenna. The antenna may have a resonating element that includes a first slot between the logic board and a segment of the peripheral conductive housing structures, a second slot between the display frame and the segment, and optionally a third slot between the support plate and the segment. The slots may be at least partially overlapping, may have respective lengths, may be located at respective distances from a cover layer for the display, and may collectively receive radio-frequency signals in a frequency band such as the L5 GPS band. Switching circuitry and filter circuitry may be coupled to the antenna feed and/or to the antenna feed (s) of one or more adjacent antennas in the electronic device to help to isolate the antennas from each other.

Abstract: An optical millimeter wave terahertz transfer system and transfer method are disclosed. The device comprises a local terminal, a transfer link, an access terminal, and a user terminal. By using the device in the transfer link, optical signals transferred forward and backward are extracted through optical couplers, and millimeter wave terahertz signals with a stable phase are obtained at any position in the transfer link through optical signal filtering, photovoltaic conversion, microwave filtering, frequency division and optical frequency shift processing. The device and method have the characteristics of high reliability, simple structure, and low implementation cost.

Abstract: Disclosed herein are palladium-catalyzed dehydrogenation processes of carboxylic acids to make ?, ?-unsaturated carboxylic acids or ?-alkylidene butenolides. The processes allow the chemoselective dehydrogenation of carboxylic acids in the presence of other enolizable functionalities such as ketones, providing reactivity that is inaccessible with existing carbonyl desaturation protocols.

Abstract: A humanized anti-neurotensin receptor 1 (NTSR1) antibody or an antigen-binding fragment thereof. Also, a method for treating, prophylactic treating and/or preventing diseases and/or disorders caused by or related to NTSR1 activity and/or signaling, and a method or kit for detecting NTSR1 in a sample.

Abstract: A fast harmless treatment device for a hazardous flexible material is provided. The fast harmless treatment device includes a container body and a container lid, where a bottom plate is fixed at a near-bottom position of the container body; a movable plate is provided in the container body; there is a gap between an outer edge of the movable plate and an inner wall of the container body; a movement mechanism is configured to compress a hazardous flexible material on the movable plate towards the container lid; the container lid and the movable plate each are provided therein with a heating tube; and a heating tube and a blowing device are provided on the bottom plate to cause high-temperature convection and disinfect an aerosol-mixed gas.

Abstract: An energy efficiency calculation method includes calculating an hourly cooling load of a cooling area, determining an hourly power consumption of a chiller unit, an hourly power consumption of a water pump, and an hourly power consumption of a cooling tower of a refrigeration machine room, and calculating an energy efficiency of a water system of the refrigeration machine room based on the hourly cooling load, the hourly power consumption of the chiller unit, the hourly power consumption of the water pump, and the hourly power consumption of the cooling tower.

Abstract: A method (80) of performing transfer of data packets requiring a specified Quality of Service, QoS, by a User Equipment, UE, in an end-to-end, E2E, multi-hop sidelink radio communication (81). The UE comprises a processor operated protocol stack arranged for providing Physical, PHY, layer functionality, Media Access Control, MAC, layer functionality, Radio Link Control, RLC, layer functionality, and Adaptation, Adapt, layer functionality. The RLC layer functionality providing a plurality of ingress and egress RLC channels for transferring data packets. The method comprising receiving (83), by the RLC layer functionality, data packets a tan ingress RLC channel, mapping (84), by the Adapt layer functionality, data packets received at the ingress RLC channel to an egress RLC channel in accordance with a mapping rule for destining the data packets while maintaining the specified QoS, and transferring (86), by the RLC layer functionality, the mapped data packets at the egress RLC channel.

Abstract: An impact-resistant super junction device and a preparing method thereof are provided. The impact-resistant super junction device includes a silicon substrate, a first epitaxial layer, a second epitaxial layer, at least one voltage-resistant layer, a gate oxide layer, gates, an interlayer dielectric, metal through holes, a circuit link layer, and at least one passivation layer that are sequentially disposed from bottom to top. The at least one voltage-resistant layer includes a first columnar region and a second columnar region. Body regions and sources are disposed between the at least one voltage-resistant layer and the gate oxide layer. The metal through holes are uniformly distributed in the interlayer dielectric. The preparing method includes preparing epitaxial layers, preparing the at least one voltage-resistant layer; preparing a VDMOS structure, and preparing a circuit link layer and the at least one passivation layer.