Abstract: Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes is disclosed, including electroplating a substrate having a conductive baseline on a surface thereof in an electroplating bath containing a metal ion and carbon nanotubes, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline. Alternatively, a method of the present invention includes preparing a dispersion of carbon nanotubes dispersed in an organic solvent, printing a baseline with the dispersion on a surface of a substrate, evaporating the organic solvent to obtain a conductive baseline, and electroplating the surface in an electroplating bath containing a metal ion, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline.

Abstract: Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes is disclosed, including electroplating a substrate having a conductive baseline on a surface thereof in an electroplating bath containing a metal ion and carbon nanotubes, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline. Alternatively, a method of the present invention includes preparing a dispersion of carbon nanotubes dispersed in an organic solvent, printing a baseline with the dispersion on a surface of a substrate, evaporating the organic solvent to obtain a conductive baseline, and electroplating the surface in an electroplating bath containing a metal ion, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline.

Abstract: The present invention discloses an asymmetric watermarking technology, which is particularly resistant to projection attack. The asymmetric watermark embedding technology of this invention comprises the following steps: Analyze an original image ?o to obtain its watermarking space W. Divide said watermarking space W to obtain two orthogonal subspaces g and h. Select an embedding key G, which is a matrix and which columns form bases of subspace g. Calculate a matrix H, HTG=0. Columns of matrix H form bases of subspace h. Calculate detecting key D: D=GT+BHT; wherein B is a matrix. Obtain a watermark w and embed said watermark w into said original image ?o to obtain a watermarked image ?w, as follows: ?w=?o+Gw wherein D ?o=mo is not a 0 vector.

Abstract: The present invention relates to a heat sink. The heat sink includes a casting, a block, heat pipes, and fins. The block is placed in a cavity of the casting. The heat pipes are composed of a straight heat pipe and two second degree curve heat pipes. The heat pipes are coupled to the casting. The fins are also coupled to the casting. The block absorbs heat from a heat source and transfer to the fins via heat pipes for heat dissipation.

Abstract: The present invention provides a catalyst for the methanol autothermal reforming reaction, which includes a mixed oxide of cerium and zirconium as a carrier, and Pt deposited on the carrier. The catalyst of the present invention can catalyze a feed containing methanol, water vapor and air undergoing the autothermal reforming reaction to form a hydrogen-rich reformate gas containing hydrogen, CO and CO2.

Abstract: A heat dissipation device with heat pipes is described. The heat dissipation device includes at least one U-shaped heat pipe, a plurality of heat fins, and a heat sink base. A middle portion of the U-shaped heat pipe is coupled to the heat sink base to receive thermal energy and transmit the same to two arm portions of the U-shaped heat pipe so as to improve the heat dissipation efficiency. A fixing plate is further utilized to fix the U-shaped heat pipe onto the heat sink base. The fixing plate further absorbs the thermal energy and the thermal energy is transmitted from the middle portion of the U-shaped heat pipe to the two arm portions of the U-shaped heat pipe and then to the heat fins. Therefore, the heat dissipation device can increase the heat dissipation efficiency while reducing the space it occupies in an electrical device.

Abstract: A heat dissipation module including heat pipes. The heat dissipation module includes a seat with grooves, heat pipes and two fin assemblies. The heat pipes are secured in the grooves at a first end and extend at the second end thereof. A first fin assembly with parallel first fins is soldered to the seat, covering the grooves and heat pipes. A second fin assembly with parallel second fins is secured to the cantilevered end of the heat pipes.

Abstract: Carbon nanotubes are directly grown on a substrate surface having three metal layers thereon by a thermal chemical vapor deposition at low-temperature, which can be used as an electron emission source for field emission displays. The three layers include a layer of an active metal catalyst sandwiched between a thick metal support layer formed on the substrate and a bonding metal layer. The active metal catalyst is iron, cobalt, nickel or an alloy thereof; the metal support and the bonding metal independently are Au, Ag, Cu, Pd, Pt or an alloy thereof; and they can be formed by sputtering, chemical vapor deposition, physical vapor deposition, screen printing or electroplating.

Abstract: A novel method for coding and decoding video data and codec thereof are disclosed. The invented method provides an FGS (fine grained scalability) algorithm using bit plane coding technique. While conducting the bit plane encoding, the spatial and temporal dependence between bit planes is used to exploit the redundancy in the bit planes. In the embodiment of this invention, the bit plains are represented by quadtrees and bit plane prediction is made to remove the spatial and temporal redundancy in a video. The scalability of the video data is fine grained since atoms of the motion residuals do not have to be grouped as coding units.

Abstract: A manufacturing method of carbon nanotube transistors is disclosed. The steps include: forming an insulating layer on a substrate; forming a first oxide layer on the insulating layer using a solution with cobalt ion catalyst by spin-on-glass (SOG); forming a second oxide layer on the first oxide layer using a solution without the catalyst; forming a blind hole on the second oxide layer using photolithographic and etching processes, the blind hole exposing the first oxide layer, the sidewall of the second oxide layer, and the insulating layer; forming a single wall carbon nanotube (SWNT) connecting the first oxide layer separated by the blind hole and parallel to the substrate; and forming a source and a drain connecting to both ends of the SWNT, respectively.

Abstract: A photo sense element that is composed of a P-type doped layer, a N-type doped layer, an intrinsic layer, a first electrode corresponding to the P-type doped layer, a second electrode corresponding to the N-type doped layer and a dielectric layer. Wherein, the intrinsic layer is disposed in between the P-type doped layer and the N-type doped layer to form a diode. Moreover, the dielectric layer is disposed in between the P-type doped layer and the first electrode or in between the N-type doped layer and the second electrode to form a dielectric layer capacitor. By using the appropriate circuit design to have the parasitic capacitor formed by the diodes under the reverse bias state in parallel with the dielectric layer capacitor, so the photo sense element has greater capacitance.

Abstract: Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the I1 and I2 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.

Abstract: The present invention discloses a supported metal catalyst useful in synthesizing carbon nanotubes by low-temperature (<600° C.) thermal chemical vapor deposition (CVD), which contains particles of a noble metal having a diameter of 0.1-10 microns as a support and a metal catalyst deposited on the support. The metal catalyst is iron, cobalt, nickel or an alloy thereof. The weight ratio of the metal catalyst to the support ranges from 0.1:100 to 10:100. The present invention also discloses a method of synthesizing carbon nanotubes directly on a substrate by low-temperature thermal CVD, wherein the support is not needed to be removed from the substrate after growth of carbon nanotubes.

Abstract: Carbon nanotubes are directly grown on a substrate surface having three metal layers thereon by a thermal chemical vapor deposition at low-temperature, which can be used as an electron emission source for field emission displays. The three layers include a layer of an active metal catalyst sandwiched between a thick metal support layer formed on the substrate and a bonding metal layer. The active metal catalyst is iron, cobalt, nickel or an alloy thereof; the metal support and the bonding metal independently are Au, Ag, Cu, Pd, Pt or an alloy thereof; and they can be formed by sputtering, chemical vapor deposition, physical vapor deposition, screen printing or electroplating.

Abstract: A combinative carbon material is presented. A large-sized carbon material serving as a support combines with a nano-sized fibrous carbon material, which grows on the support. In addition to the support, a catalyst system includes an active nanocatalyst and an optional co-catalyst. The catalyst system is then reacted with a carbon source at an elevated temperature to form a combinative carbon material.

Abstract: A photodetector comprising a P-type, a N-type, an intrinsic layer, a first electrode corresponding to the P-type, a second electrode corresponding to the N-type, and a dielectric layer in such a way that the intrinsic layer is disposed between the P-type and the N-type for forming a diode and the dielectric layer is provided between the P-type and the first electrode (or between the N-type and the second electrode) for configuring a dielectric capacitor. By parallel connecting effective capacitor of reverse-biased diode and dielectric capacitor, the photodetector is capable of providing greatly increased capacitance. The operating modes involve charging the dielectric capacitor before subjecting the photodetector to photons for detecting signals.

Abstract: An optical fiber distribution panel assembly wherein a panel holding fiber connector blocks is pivotably mounted to a base member about a horizontal axis. Fibers exiting an optical switching module supported on the base member are routed up the sides of the panel and terminatd at appropriate ones of the fiber connector blocks. Excess slack fiber is coiled and placed on fiber takeup saddles secured to a panel overlying the connector block field. A cover panel overlies the saddle-holding panel to complete the assembly.

Abstract: Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the 11 and 12 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.

Abstract: A purification method for obtaining high-purity PMDA. The method controls temperatures of cyclone separators in a series to separate PMDA and other by-products of different sublimation temperatures. High-purity PMDA is collected in the first cyclone separator, and no other purification steps are needed.

Abstract: A purification method for obtaining high-purity PMDA. The method controls temperatures of cyclone separators in a series to separate PMDA and other by-products of different sublimation temperatures. High-purity PMDA is collected in the first cyclone separator, and no other purification steps are needed.