Abstract: The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which are alternately stacked and have different refractive indexes. An N-type semiconductor layer, an activation layer and a light emitting layer which is a P-type semiconductor layer are sequentially formed on the sapphire substrate. An N-type electrode and a P-type electrode are respectively coated on the N-type semiconductor layer and the P-type semiconductor layer. The dielectric layer can lower the defect density of the light emitting layer during the epitaxial growth process. Further, the dielectric layer can function as a high-reflectivity area to reflect light generated by the light emitting layer and the light is projected downward to be emitted from the top or the lateral. Thereby is greatly increased the light-extraction efficiency.

Abstract: The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which are alternately stacked and have different refractive indexes. An N-type semiconductor layer, an activation layer and a light emitting layer which is a P-type semiconductor layer are sequentially formed on the sapphire substrate. An N-type electrode and a P-type electrode are respectively coated on the N-type semiconductor layer and the P-type semiconductor layer. The dielectric layer can lower the defect density of the light emitting layer during the epitaxial growth process. Further, the dielectric layer can function as a high-reflectivity area to reflect light generated by the light emitting layer and the light is projected downward to be emitted from the top or the lateral. Thereby is greatly increased the light-extraction efficiency.

Abstract: The present invention discloses an LED structure with a Bragg film and a metal layer, wherein a Bragg film and a metal layer are coated on a bottom of a sapphire substrate. The Bragg film includes two optical layers having different refractive indexes and alternately stacked. The materials and thickness of the optical layers of the Bragg film are optimized to form a high-reflectivity area via optical operation, which can effectively reflect the incident light generated by the light emitting layer from different incident angles. The Bragg film together with the metal layer can reflect the light, which is projected downward, to be emitted from the top or lateral of an LED structure. Therefore, the present invention can greatly increase the light-extraction efficiency of the LED structure.

Abstract: The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency.

Abstract: A photoelectric conversion element comprises a solar-energy epitaxial layer, a bond layer and a LED epitaxial layer, which are stacked sequentially. The bond layer has a plurality of holes allowing light to pass. The solar-energy epitaxial layer receives light via the holes and generates electric energy, and an external secondary battery stores the electric energy. When environmental illumination disappears, the LED epitaxial layer is powered by the external secondary battery to emit light. When the photoelectric conversion element of the present invention applies to outdoor traffic signs, advertisement signboards and indicators, they can operate without external power supply.

Abstract: The present invention discloses an LED-laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

Abstract: The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency.

Abstract: The present invention discloses a laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

Abstract: The preset invention discloses a high-brightness LED structure and a method for fabricating the same. The LED structure of the present invention comprises a silicon substrate, a metal adhesion layer, a metal reflection layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, which are sequentially stacked. In the method of the present invention, the P-type semiconductor layer, active layer, N-type semiconductor layer and metal reflection layer are sequentially deposited on an N-type substrate; next, the metal reflection layer is bonded to the metal adhesion layer having been formed on the silicon substrate; then, the N-type substrate is removed. The present invention uses the silicon substrate to replace the light-absorptive GaAs substrate. Therefore, the present invention can promote light efficiency and enhance brightness.

Abstract: A photoelectric conversion element comprises a solar-energy epitaxial layer, a bond layer and a LED epitaxial layer, which are stacked sequentially. The bond layer has a plurality of holes allowing light to pass. The solar-energy epitaxial layer receives light via the holes and generates electric energy, and an external secondary battery stores the electric energy. When environmental illumination disappears, the LED epitaxial layer is powered by the external secondary battery to emit light. When the photoelectric conversion element of the present invention applies to outdoor traffic signs, advertisement signboards and indicators, they can operate without external power supply.

Abstract: The present invention discloses an LED-laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

Abstract: The present invention discloses a low-temperature light-emitting-diode chip metal bonding layer, which comprises: a first metal layer formed on the joint surface of an LED epitaxial layer and containing an ITO layer, a silver layer, a titanium layer, a platinum layer and a gold layer sequentially arranged from the LED epitaxial layer; and a second metal layer formed on the joint surface of the substrate and containing a titanium layer, a gold layer and an indium layer sequentially arranged from the substrate. Because of the low melting point of the indium layer, the bonding process of the substrate and the LED chip epitaxial layer can be undertaken at a relatively low temperature. Therefore, the present invention can prevent the film structures from being damaged by high temperature and can raise the yield of metal bonding LED chips.

Abstract: The present invention discloses a laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

Abstract: A light emitting diode includes a lower electrode, a semiconductor substrate, a lower cladding layer, an action layer, an upper cladding layer, a window diffusion layer, and a composite upper electrode. The composite upper electrode includes an ohmic contact layer formed on a partial surface of the window diffusion layer, and a conductive transparent connecting oxidation layer coated on the ohmic contact layer and directly coated on a partial surface of the window diffusion layer to connect the ohmic contact layer and a wiring metal electrode layer.