Abstract: A method performed by a network node for handling a communication session in a wireless communication network. The network node receives from a user equipment (UE) a registration message for re-registering the UE to a session. The network node further verifies the registration message based on registration information previously stored for the UE When verified in response to the reception, transmits back to the UE, a registration response along with a terminating request for a call establishment.

Abstract: A method performed by a network node in a communications network, for handling of discovery of entrance points of a User Equipment (UE) to an IP Multimedia Subsystem (IMS) network, during an IMS Protocol Data Unit (PDU) session setup. The network node obtains a list of IMS entrance point instances, wherein the list of IMS entrance point instances comprises an address of each IMS entrance point instance and one or more transport protocols supported by each IMS entrance point instance. The network node generates, based on the obtained list of IMS entrance point instances, a configuration message for IMS entrance point discovery, comprising the address of the IMS entrance point instance and the one or more transport protocols supported by each IMS entrance point instance. The network node further provides to the UE the generated configuration message.

Abstract: Various embodiments of the present disclosure provide a method for call setup. The method which may be performed by a session management node comprises receiving an evolved packet system (EPS) fallback indicator from a mobility management node. In an embodiment, the EPS fallback indicator may indicate that a fallback to an EPS for an Internet protocol multimedia subsystem (IMS) voice service is ongoing. The method further comprises reporting an EPS fallback event to a policy charging node, according to the EPS fallback indicator.

Abstract: A method performed by a network node in a communications network, for handling of discovery of entrance points of a User Equipment (UE) to an IP Multimedia Subsystem (IMS) network, during an IMS Protocol Data Unit (PDU) session setup. The network node obtains a list of IMS entrance point instances, wherein the list of IMS entrance point instances comprises an address of each IMS entrance point instance and one or more transport protocols supported by each IMS entrance point instance. The network node generates, based on the obtained list of IMS entrance point instances, a configuration message for IMS entrance point discovery, comprising the address of the IMS entrance point instance and the one or more transport protocols supported by each IMS entrance point instance. The network node further provides to the UE the generated configuration message.

Abstract: A method performed by a network node for handling a communication session in a wireless communication network. The network node receives from a user equipment (UE) a registration message for re-registering the UE to a session. The network node further verifies the registration message based on registration information previously stored for the UE When verified in response to the reception, transmits back to the UE, a registration response along with a terminating request for a call establishment.

Abstract: A method implemented by a first network node in an IMS communication network is provided. The method may comprise: receiving a register request from a user equipment; and transmitting the register request which comprises contact information of the user equipment to a second network node. In the present disclosure, the P-CSCF may be able to route the terminating requests without UE registration bindings, which increases a successful rate of the terminating services.

Abstract: Embodiments of the present disclosure provide a method for scaling of a server VNF Manager VNF in a virtualized network. The virtualized network comprises at least a server VNF, a client VNF connected to the server VNF and a VNF manager. The connection between the client VNF and the server VNF is initiated by the client VNF. The method is performed at a PCM server. Firstly, scaling information is obtained at the PCM server in response to a scaling operation performed by the VNF manager on the server VNF. Once the scaling information is obtained, then the PCM server notifies the client VNF of the scaling information. There is also provided a method performed at a client VNF and corresponding apparatuses.

Abstract: Embodiments of the present disclosure provide a method for scaling of a server VNF Manager VNF in a virtualized network. The virtualized network comprises at least a server VNF, a client VNF connected to the server VNF and a VNF manager. The connection between the client VNF and the server VNF is initiated by the client VNF. The method is performed at a PCM server. Firstly, scaling information is obtained at the PCM server in response to a scaling operation performed by the VNF manager on the server VNF. Once the scaling information is obtained, then the PCM server notifies the client VNF of the scaling information. There is also provided a method performed at a client VNF and corresponding apparatuses.

Abstract: A semiconductor device includes a substrate structure. The substrate structure includes a protruding engagement member having an inner periphery defining a groove and an outer periphery, an oxide layer on the protruding engagement member, and a bonding material layer on the oxide layer. The semiconductor device also includes a micro-electromechanical system (MEMS) substrate having a bonging pad. The bonding pad of the MEMS substrate is bonded to the bonding material layer of the substrate structure.

Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.

Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.

Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.

Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.

Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.

Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.

Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.