Abstract: A device is provided that includes: a photonic integrated circuit; a laser die comprising a welding pad; and a first optical fiber including: a first end of the first optical fiber fused to a surface of the photonic integrated circuit, wherein a first fusion bond exists between the first end of the first optical fiber and the surface of the photonic integrated circuit; and a second end of the first optical fiber fused to the welding pad, wherein a second fusion bond exists between the second end of the first optical cable and the welding pad.

Abstract: Optical devices and methods of manufacture are presented in which an optical device and other devices such as laser dies are attached prior to bonding of the optical device and laser die to other device. The optical device and laser die are separated by no more than about 10 ?m.

Abstract: A package structure is provided. The package structure includes a cell chip structure having a memory cell and a multiplexer. The package structure includes an intermediate chip structure directly bonded to the cell chip structure through dielectric-to-dielectric bonding and metal-to-metal bonding and having a sense amplifier and a driver element. The intermediate chip structure does not have a memory cell. The package structure includes a calculating chip structure bonded to the intermediate chip structure and having a calculating element.

Abstract: A manufacturing method of a semiconductor device includes the following steps. An electrical insulating and thermal conductive layer is formed over a semiconductor substrate. A dielectric structure is formed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. An opening is formed in the dielectric structure, wherein the opening extending through the dielectric structure and the electrical insulating and thermal conductive layer. A circuit layer is formed in the dielectric structure, wherein the circuit layer fills the opening.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer, an etch stop layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The etch stop layer includes silicon nitride and is disposed between the semiconductor substrate and the electrical insulating and thermal conductive layer. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: A method for recovering C2 components in a methane-containing industrial gas includes the steps of (1) cooling a compressed methane-containing industrial gas and performing gas-liquid separation; (2) absorbing C2 components in the gas phase by using an absorbent to obtain an absorption rich liquid; (3) returning the absorption rich liquid to the compression in step (1) or mixing the absorption rich liquid with the liquid phase obtained in step (1) to obtain a mixed liquid, and depressurizing the mixed liquid or the absorption rich liquid; (4) performing methane desorption on the depressurized stream to obtain a rich absorbent, or performing second gas-liquid separation on the depressurized stream, followed by methane desorption on the second liquid phase to obtain a rich absorbent; and (5) desorbing and separating the rich absorbent to obtain a lean absorbent and an enriched gas, and recycling and reusing the lean absorbent.

Abstract: In some embodiments, a photonic device includes a photonic interconnect structure that includes a first cladding layer; a waveguide over the first cladding layer; a second cladding layer disposed over the waveguide; a transparent material in the first cladding layer and the second cladding layer, the transparent material includes a first sidewall adjacent to the waveguide and a second sidewall tilted with respect to the first sidewall of the transparent material; and a first reflective film over the second sidewall of the transparent material. In some embodiments, the photonic device also includes a light-receiving structure that includes a transparent protrusion above the transparent material, the transparent protrusion including a first sidewall and a second sidewall opposite to the second sidewall of the transparent protrusion; and a second reflective film over the second sidewall of the transparent protrusion and horizontally overlapping the first reflective film.

Abstract: An apparatus includes a semiconductor component and a cooling structure. The cooling structure is over a back side of the semiconductor component. The cooling structure includes a housing, a liquid delivery device and a gas exhaust device. The housing includes a cooling space adjacent to the semiconductor component. The liquid delivery device is connected to an inlet of the housing and is configured to deliver a liquid coolant into the cooling space from the inlet. The gas exhaust device is connected to an outlet of the housing and is configured to lower a pressure in the housing.

Abstract: A method includes forming an optical engine including a photonic integrated circuit die, wherein the photonic integrated circuit die includes an optical component, forming an adapter comprising a laser written waveguide, and assembling the optical engine, the adapter, and an optical fiber as a package. The optical fiber is optically coupled to the optical component through the laser written waveguide in the adapter.

Abstract: A safety airbag, including: an air bag, having an inflated and stowed state; and a gas generator, used to inflate the air bag to the inflated state, wherein the air bag includes a body portion and a cut-out portion, the cut-out portion being formed as being cut out from the air bag, but still remaining integral with the body portion, and in the inflated state, the cut-out portion being oriented in a predetermined direction relative to the body portion via an orienting member. Using the cut-out portion to provide protection for the head of an occupant increases the utilization rate of a material for making an air bag. In addition, the height of the airbag curtain is relatively large only at the cut-out portion, and is relatively small at the remaining positions, thereby reducing the volume of the air bag.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: An apparatus includes a semiconductor component and a cooling structure. The cooling structure is over a back side of the semiconductor component. The cooling structure includes a housing, a liquid delivery device and a gas exhaust device. The housing includes a cooling space adjacent to the semiconductor component. The liquid delivery device is connected to an inlet of the housing and is configured to deliver a liquid coolant into the cooling space from the inlet. The gas exhaust device is connected to an outlet of the housing and is configured to lower a pressure in the housing.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.

Abstract: In an embodiment, a package includes an encapsulant laterally surrounding a first integrated circuit device and a second integrated circuit device, wherein the first integrated circuit device includes a die and a heat dissipation structure over the die; a sealant disposed over the heat dissipation structure; an adhesive disposed over the second integrated circuit device; and a lid disposed over the sealant and the adhesive, wherein the lid includes a first cooling passage and a second cooling passage, the first cooling passage including an opening at a bottom of the lid and aligned to the heat dissipation structure, the second cooling passage including channels aligned to the second integrated circuit device and being distant from the bottom of the lid.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.

Abstract: A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

Abstract: A device includes an integrated circuit die attached to a substrate; a lid attached to the integrated circuit die; a sealant on the lid; a spacer structure attached to the substrate adjacent the integrated circuit die; and a cooling cover attached to the spacer structure, wherein the cooling cover extends over the lid, wherein the cooling cover attached to the lid by the sealant. In an embodiment, the device includes a ring structure on the substrate, wherein the ring structure is between the spacer structure and the integrated circuit die.