Abstract: A package includes a redistribution structure that includes conductive features and first waveguides; first dies and second dies attached to the redistribution structure, wherein the first dies are different than the second dies, wherein the first dies are electrically connected to respectively corresponding second dies through the redistribution structure; and optical bridge structures attached to the redistribution structure, wherein the optical bridge structures are optically coupled to the first waveguides, wherein the optical bridge structures are electrically connected to respectively corresponding first dies and respectively corresponding second dies through the redistribution structure.

Abstract: A method of forming a package assembly includes the following operations. At least one integrated circuit structure is bonded to an interposer structure. A photonic structure is bonded to the interposer structure aside the at least one integrated circuit structure. A glass substrate is assembled to a fiber array unit. The glass substrate with the fiber array unit is bonded to the photonic structure. A laser writing process is performed to the glass substrate, so as to form a laser written waveguide structure inside the glass substrate, wherein the laser written waveguide structure is optically coupled to the fiber array unit and the photonic structure.

Abstract: Optical devices and methods of manufacture are presented in which interposers are incorporated with optical devices. In some embodiments a method includes embedding first optical packages within the interposers in order to provide optical bridging between different semiconductor devices. The first optical packages may be embedded with a glass core or metallization layers.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: An embodiment photonic device may include a first photonic interconnect formed over a first horizontal plane, a second photonic interconnect formed over a second horizontal plane that is vertically displaced relative to the first horizontal plane, and a photonic coupler connected to the first photonic interconnect and the second photonic interconnect. The photonic coupler may be configured such that first photonic signals that are incident on the photonic coupler from the first photonic interconnect are directed by the photonic coupler into the second photonic interconnect, and second photonic signals that are incident on the photonic coupler from the second photonic interconnect are directed by the photonic coupler into the first photonic interconnect.

Abstract: A fiber array unit (FAU) and the method for forming the same are provided. The FAU includes a substrate, fiber grooves, and light guiding elements. The substrate has a first region and a second region which are continuous and connected. The fiber grooves are formed in the first region. The light guiding elements are formed in the second region. The fiber grooves are aligned with the light guiding elements, respectively.

Abstract: A package includes an interposer; a photonic interconnect structure connected to the interposer, wherein the photonic interconnect structure includes: photonic components; waveguides that are optically coupled to the photonic components; and an electronic die that is electrically coupled to the photonic components; and dies electrically connected to the interposer, wherein the dies are electrically coupled to the photonic interconnect structure through the interposer.

Abstract: A package includes an interposer, wherein the interposer includes a first waveguide and a first reflector that is optically coupled to the first waveguide; an optical package attached to the interposer, wherein the optical package includes a second waveguide; and a second reflector that is optically coupled to the second waveguide, wherein the second reflector is vertically aligned with the first reflector.

Abstract: The present disclosure provides a method of processing a semiconductor structure. The method includes: placing a first semiconductor structure inside a semiconductor processing apparatus; supplying a solution, wherein the solution is directed toward a surface of the first semiconductor structure, and the solution includes a solvent and a resist; rotating the first semiconductor structure to spread the solution over the surface of the first semiconductor structure; forming a resist layer on the surface of the first semiconductor structure using the resist in the solution; and removing a portion of the solvent from the solution by an exhaust fan disposed adjacent to a periphery of the first semiconductor structure.

Abstract: Packaged semiconductor devices including heat-dissipating structures and methods of forming the same are disclosed. In an embodiment, a semiconductor package includes a semiconductor die including a substrate, a front-side interconnect structure on a front-side of the substrate, and a backside interconnect structure on a backside of the substrate opposite the front-side interconnect structure; a support die disposed on the front-side interconnect structure; a heat-dissipating structure on the support die, the heat-dissipating structure being thermally coupled to the semiconductor die and the support die; a redistribution structure on the backside interconnect structure opposite the substrate, the redistribution structure being electrically coupled to the semiconductor die; and an encapsulant on the redistribution structure and adjacent to side surfaces of the semiconductor die, the support die, and the heat-dissipating structure.

Abstract: Optical devices and methods of manufacture are presented in which a multi-tier connector is utilized to transmit and receive optical signals to and from an optical device. In embodiments a multi-tier connection unit receives optical signals from outside of an optical device, wherein the optical signals are originally in multiple levels. The multi-tier connection unit then routes the optical signals into a single level of optical components.

Abstract: A method includes implanting a substrate with a dopant to form an implanted layer in the substrate, and the implanted layer is at an intermediate level between a top surface and a bottom surface of the substrate. A laser beam is projected on the implanted layer, and is projected on a sidewall of the substrate. After the laser beam is projected, the substrate is heated, so that the substrate is cut at the implanted layer, and is cut into a top portion and a bottom portion.

Abstract: A semiconductor device comprising a first semiconductor component and a composite bonding layer on the first semiconductor component. The composite bonding layer comprises a dielectric stress buffer layer and a dielectric planarization layer, wherein a hardness of the dielectric stress buffer layer is greater than a hardness of the dielectric planarization layer. The semiconductor device further includes a second semiconductor component bonded to the first semiconductor component by insulator-to-insulator bonding between the composite bonding layer and an insulating bonding layer on the second semiconductor component, wherein the dielectric planarization layer is disposed an interface between the composite bonding layer and the insulating bonding layer.

Abstract: A package includes an optical engine attached to a package substrate, wherein the optical engine includes a first waveguide; and a waveguide structure attached to the package substrate adjacent the optical engine, wherein the waveguide structure includes a second waveguide within a transparent block, wherein a bottom surface of the transparent block is nonplanar, wherein the second waveguide is a fixed distance from the bottom surface along its length, wherein the second waveguide is optically coupled to the first waveguide.

Abstract: A device is provided that includes: a photonic integrated circuit; a laser die comprising a welding pad; and a first optical fiber including: a first end of the first optical fiber fused to a surface of the photonic integrated circuit, wherein a first fusion bond exists between the first end of the first optical fiber and the surface of the photonic integrated circuit; and a second end of the first optical fiber fused to the welding pad, wherein a second fusion bond exists between the second end of the first optical cable and the welding pad.

Abstract: Optical devices and methods of manufacture are presented in which an optical device and other devices such as laser dies are attached prior to bonding of the optical device and laser die to other device. The optical device and laser die are separated by no more than about 10 ?m.

Abstract: A package structure is provided. The package structure includes a cell chip structure having a memory cell and a multiplexer. The package structure includes an intermediate chip structure directly bonded to the cell chip structure through dielectric-to-dielectric bonding and metal-to-metal bonding and having a sense amplifier and a driver element. The intermediate chip structure does not have a memory cell. The package structure includes a calculating chip structure bonded to the intermediate chip structure and having a calculating element.

Abstract: A manufacturing method of a semiconductor device includes the following steps. An electrical insulating and thermal conductive layer is formed over a semiconductor substrate. A dielectric structure is formed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. An opening is formed in the dielectric structure, wherein the opening extending through the dielectric structure and the electrical insulating and thermal conductive layer. A circuit layer is formed in the dielectric structure, wherein the circuit layer fills the opening.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer, an etch stop layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The etch stop layer includes silicon nitride and is disposed between the semiconductor substrate and the electrical insulating and thermal conductive layer. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: In some embodiments, a photonic device includes a photonic interconnect structure that includes a first cladding layer; a waveguide over the first cladding layer; a second cladding layer disposed over the waveguide; a transparent material in the first cladding layer and the second cladding layer, the transparent material includes a first sidewall adjacent to the waveguide and a second sidewall tilted with respect to the first sidewall of the transparent material; and a first reflective film over the second sidewall of the transparent material. In some embodiments, the photonic device also includes a light-receiving structure that includes a transparent protrusion above the transparent material, the transparent protrusion including a first sidewall and a second sidewall opposite to the second sidewall of the transparent protrusion; and a second reflective film over the second sidewall of the transparent protrusion and horizontally overlapping the first reflective film.