Abstract: Packaged semiconductor devices including heat-dissipating structures and methods of forming the same are disclosed. In an embodiment, a semiconductor package includes a semiconductor die including a substrate, a front-side interconnect structure on a front-side of the substrate, and a backside interconnect structure on a backside of the substrate opposite the front-side interconnect structure; a support die disposed on the front-side interconnect structure; a heat-dissipating structure on the support die, the heat-dissipating structure being thermally coupled to the semiconductor die and the support die; a redistribution structure on the backside interconnect structure opposite the substrate, the redistribution structure being electrically coupled to the semiconductor die; and an encapsulant on the redistribution structure and adjacent to side surfaces of the semiconductor die, the support die, and the heat-dissipating structure.

Abstract: A wrench comprises a handle, a tube, an actuating-part and a scale mark area; the handle comprises a hollow rotation handle, a movable plug, a screw rod drive component and a locking component, an end of the hollow rotation handle engages with a tail end portion of the scale mark area by rotation, the screw rod drive component comprises a rotary portion and a screw rod portion, and an adjusting threaded-sleeve is sleeved over the screw rod portion; a tube positioning piece engaging with the rotary portion by rotation is provided on the rotary portion; the locking component comprises a handle insert and positioning pins, the handle insert is installed on the rotary portion via a key and an outer surface of the handle insert is connected with an inner surface of the hollow rotation handle, and positioning pins are provided at a front end portion of the movable plug.

Abstract: An economizer and an air conditioning system. The economizer includes a housing with a refrigerant inlet for connecting to a first heat exchanger, a refrigerant outlet for connecting to a second heat exchanger, and a suction port for connecting to an intermediate stage of a compressor provided thereon; and a choke portion configured to protrude inwardly from an inner wall of the housing and arranged close to the suction port, such that refrigerant flowing to the suction port is at least partially obstructed. According to the technical solutions of the present application, the refrigerant flowing to the suction port can be at least partially obstructed. When the liquid droplets carried by the refrigerant are obstructed by the choke portion, the liquid droplets are adsorbed on the wall surface to form a liquid film, and the movement of the liquid film is obstructed by the choke portion.

Abstract: The present disclosure provides for multi-specific antibodies and antigen-binding fragments thereof that bind to human MUC1 and CD16A, pharmaceutical compositions comprising said antibodies, and use of the antibodies or the compositions for treating a disease, such as cancer.

Abstract: Optical devices and methods of manufacture are presented in which a multi-tier connector is utilized to transmit and receive optical signals to and from an optical device. In embodiments a multi-tier connection unit receives optical signals from outside of an optical device, wherein the optical signals are originally in multiple levels. The multi-tier connection unit then routes the optical signals into a single level of optical components.

Abstract: A non-coherent noise reduction method, comprising: (a) receiving a plurality of input audio sensing signals by a processor, wherein the input audio sensing signals correspond to a plurality of channels responsive to sensing by a plurality of audio sensors; (b) detecting whether non-coherent noise exists in at least one of the channels by a non-coherent noise detector; (c) estimating at least one noise power of the non-coherent noise by a noise power estimator, if the non-coherent noise exists in at least one of the channels; (d) deriving at least one noise contour of the non-coherent noise by a noise contour estimator, if the non-coherent noise exists in at least one of the channels; and (e) enhancing the input audio sensing signals according to the noise power and the noise contour if the non-coherent noise exists in at least one of the channels.

Abstract: A method includes implanting a substrate with a dopant to form an implanted layer in the substrate, and the implanted layer is at an intermediate level between a top surface and a bottom surface of the substrate. A laser beam is projected on the implanted layer, and is projected on a sidewall of the substrate. After the laser beam is projected, the substrate is heated, so that the substrate is cut at the implanted layer, and is cut into a top portion and a bottom portion.

Abstract: A semiconductor device comprising a first semiconductor component and a composite bonding layer on the first semiconductor component. The composite bonding layer comprises a dielectric stress buffer layer and a dielectric planarization layer, wherein a hardness of the dielectric stress buffer layer is greater than a hardness of the dielectric planarization layer. The semiconductor device further includes a second semiconductor component bonded to the first semiconductor component by insulator-to-insulator bonding between the composite bonding layer and an insulating bonding layer on the second semiconductor component, wherein the dielectric planarization layer is disposed an interface between the composite bonding layer and the insulating bonding layer.

Abstract: A package includes an optical engine attached to a package substrate, wherein the optical engine includes a first waveguide; and a waveguide structure attached to the package substrate adjacent the optical engine, wherein the waveguide structure includes a second waveguide within a transparent block, wherein a bottom surface of the transparent block is nonplanar, wherein the second waveguide is a fixed distance from the bottom surface along its length, wherein the second waveguide is optically coupled to the first waveguide.

Abstract: A device is provided that includes: a photonic integrated circuit; a laser die comprising a welding pad; and a first optical fiber including: a first end of the first optical fiber fused to a surface of the photonic integrated circuit, wherein a first fusion bond exists between the first end of the first optical fiber and the surface of the photonic integrated circuit; and a second end of the first optical fiber fused to the welding pad, wherein a second fusion bond exists between the second end of the first optical cable and the welding pad.

Abstract: Optical devices and methods of manufacture are presented in which an optical device and other devices such as laser dies are attached prior to bonding of the optical device and laser die to other device. The optical device and laser die are separated by no more than about 10 ?m.

Abstract: A package structure is provided. The package structure includes a cell chip structure having a memory cell and a multiplexer. The package structure includes an intermediate chip structure directly bonded to the cell chip structure through dielectric-to-dielectric bonding and metal-to-metal bonding and having a sense amplifier and a driver element. The intermediate chip structure does not have a memory cell. The package structure includes a calculating chip structure bonded to the intermediate chip structure and having a calculating element.

Abstract: A manufacturing method of a semiconductor device includes the following steps. An electrical insulating and thermal conductive layer is formed over a semiconductor substrate. A dielectric structure is formed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. An opening is formed in the dielectric structure, wherein the opening extending through the dielectric structure and the electrical insulating and thermal conductive layer. A circuit layer is formed in the dielectric structure, wherein the circuit layer fills the opening.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer, an etch stop layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The etch stop layer includes silicon nitride and is disposed between the semiconductor substrate and the electrical insulating and thermal conductive layer. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: In some embodiments, a photonic device includes a photonic interconnect structure that includes a first cladding layer; a waveguide over the first cladding layer; a second cladding layer disposed over the waveguide; a transparent material in the first cladding layer and the second cladding layer, the transparent material includes a first sidewall adjacent to the waveguide and a second sidewall tilted with respect to the first sidewall of the transparent material; and a first reflective film over the second sidewall of the transparent material. In some embodiments, the photonic device also includes a light-receiving structure that includes a transparent protrusion above the transparent material, the transparent protrusion including a first sidewall and a second sidewall opposite to the second sidewall of the transparent protrusion; and a second reflective film over the second sidewall of the transparent protrusion and horizontally overlapping the first reflective film.

Abstract: An apparatus includes a semiconductor component and a cooling structure. The cooling structure is over a back side of the semiconductor component. The cooling structure includes a housing, a liquid delivery device and a gas exhaust device. The housing includes a cooling space adjacent to the semiconductor component. The liquid delivery device is connected to an inlet of the housing and is configured to deliver a liquid coolant into the cooling space from the inlet. The gas exhaust device is connected to an outlet of the housing and is configured to lower a pressure in the housing.

Abstract: A method includes forming an optical engine including a photonic integrated circuit die, wherein the photonic integrated circuit die includes an optical component, forming an adapter comprising a laser written waveguide, and assembling the optical engine, the adapter, and an optical fiber as a package. The optical fiber is optically coupled to the optical component through the laser written waveguide in the adapter.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: An apparatus includes a semiconductor component and a cooling structure. The cooling structure is over a back side of the semiconductor component. The cooling structure includes a housing, a liquid delivery device and a gas exhaust device. The housing includes a cooling space adjacent to the semiconductor component. The liquid delivery device is connected to an inlet of the housing and is configured to deliver a liquid coolant into the cooling space from the inlet. The gas exhaust device is connected to an outlet of the housing and is configured to lower a pressure in the housing.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.