Abstract: A fabricating method of a dye-sensitizing solar cell (DSSC) is provided. In the method, a working electrode and a counter electrode disposed opposite to each other is provided. The working electrode has a first patterned conductive line, and the counter electrode has a second patterned conductive line. A first gap control layer on at least an outer portion of one of the first and second patterned conductive lines is formed to surround the first and the second patterned conductive lines. Alternatively, the first gap control layer is symmetrically formed on one of the first and second patterned conductive lines. Then, a packaging material is formed on the first gap control layer. Next, the working electrode and the counter electrode are pressed to form a gap between the working electrode and the counter electrode. The packaging material is cured, and an electrolyte is filled into the gap.

Abstract: A camera module includes a substrate, a holder, and a dustproof member. The holder is mounted on the substrate. The holder also defines an air vent. The dustproof member includes a permeable portion. The permeable portion is made of air-permeable material. The permeable portion shields the air vent. The dustproof member can also be made of a porous material plugging the air vent.

Abstract: A photosensitizer dye is provided and it is a ruthenium-based complex represented by formula (1): wherein X1 is one of formulae (2) to (7) and X2 is hydrogen (H) or the same as X1.

Abstract: A high voltage metal-oxide-semiconductor (HVMOS) transistor includes a gate poly, wherein a channel is formed in an area projected from the gate poly in a thickness direction when the HVMOS is activated; two carrier drain drift regions, adjacent to the area projected from the gate poly, wherein at least one of the carrier drain drift regions has a gradient doping concentration; and two carrier plus regions, respectively locate within the two carrier drain drift regions, wherein the two carrier plus regions and the two carrier drain drift regions are communicating with each other through the channel when the HVMOS is activated.

Abstract: A camera module includes a substrate, a holder, and a dustproof member. The holder is mounted on the substrate. The holder also defines an air vent. The dustproof member includes a permeable portion. The permeable portion is made of air-permeable material. The permeable portion shields the air vent. The dustproof member can also be made of a porous material plugging the air vent.

Abstract: A method of fabricating a semiconductor device is provided. The method comprises: forming a first layer; forming a P-well on the first layer; forming an isolation region in the P-well; performing an extra implantation on a surface between the P-well and the first layer; and forming a source/drain region. The method of the present invention can solve the punch through problem of the conventional iso-NMOS transistor without increasing cost.

Abstract: The present invention provides a dye-sensitized solar cell (DSSC), comprising: a substrate having a first electrode formed thereon; a plurality of nanoparticles adsorbed with dye, overlying the first electrode; a solid electrolyte containing metal quantum dots completely covering the nanoparticles and fully filling the space between the nanoparticles; and a second electrode overlying the solid electrolyte. The present invention further provides a method for forming the dye-sensitized solar cell.

Abstract: A dye-sensitized solar cell and method for fabricating the same are provided. The dye-sensitized solar cell includes a photo electrode including a first electrode and a Zn-doped TiO2 porous layer disposed on the first electrode, wherein the Zn-doped TiO2 porous layer absorbs a dye. A second electrode is disposed opposite to the photo electrode, wherein the Zn-doped TiO2 porous layer is disposed between the first and second electrodes. An electrolyte is disposed between the photo electrode and the second electrode.

Abstract: Disclosed is a method to manufacture an electrode. The metal oxide of different sizes (or metal oxide secondary particle of similar size) is formed on a transparent substrate by electrophoresis deposition. Subsequently, the metal oxide layer is compressed and dipped in dye to complete an electrode applied in a solar cell. Furthermore, the step of dipping the metal oxide in dye can be earlier than the electrophoresis deposition, thereby reducing the dipping period and dipping temperature.

Abstract: Organic dyes and photoelectric conversion devices are provided. The Organic dye has the structure represented by formula (I), wherein, n is an integral of 2-11; the plurality of X is independent and elected from the group consisting of and combinations thereof; R, R1, and R2 comprise hydrogen, halogen, C1-18 alkyl group, C1-18 alkoxy group, C3-18 heteroalkyl group, C3-20 aryl group, C3-20 heteroaryl group, C3-20 cycloaliphatic group or C3-20 cycloalkyl group, or R1 is connected to R2 to form a ring having 5-14 members; R3 comprise hydrogen, halogen, nitro group, amino group, C1-18 alkyl group, C1-18 alkoxy group, C1-18 sulfanyl group, C3-18 heteroalkyl group, C3-20 aryl group, C3-20 heteroaryl group, C3-20 cycloaliphatic group or C3-20 cycloalkyl group; and Z is hydrogen, alkali metal, or quaternary ammonium salt.

Abstract: A dye-sensitizing solar cell (DSSC) is provided. The DSSC includes a working electrode, a counter electrode disposed opposite to the working electrode, a first gap control layer disposed between the working electrode and the counter electrode, a packaging material, and an electrolyte. The working electrode has a first patterned conductive line. The counter electrode has a second patterned conductive line. The first gap control layer is located on at least an outer portion of one of the first and the second patterned conductive lines to surround at least the first and the second patterned conductive lines or is symmetrically located on one of the first and the second patterned conductive lines. The packaging material is disposed on the first gap control layer such that the working electrode, the counter electrode, the first gap control layer, and the packaging material form a gap. The electrolyte is disposed in the gap.

Abstract: There is disclosed herein phosphorescent compounds, uses thereof, and devices including organic light emitting diode (OLEDs) including such compounds. Compounds of interest include: wherein A is Os or Ru The anionic chelating chromophores N^N, which are formed by connecting one pentagonal ring structure containing at least two nitrogen atoms to a hexagonal pyridine type of fragment via a direct carbon-carbon linkage. L is a neutral donor ligand; the typical example includes carbonyl, pyridine, phosphine, arsine and isocyanide; two neutral L's can also combine to produce the so-called chelating ligand such as 2,2?-bipyridine, 1,10-phenanthroline and N-heterocyclic carbene (NHC) ligand, or bidentate phosphorous ligands such as 1,2-bis(diphenylphosphino)ethane, 1,2-bis(diphenylphosphino)benzene. L can occupy either cis or trans orientation.

Abstract: The invention provides an electrolyte composition and dye-sensitized solar cell using the same. The electrolyte composition includes a diionic liquid of Formula: Z? (X—Y—X)Z?, wherein X includes ammonium, imidazolium, pyridinium or phosphonium, Y is (CH2)n, n is an integer of 1-16, Z is I, and Z? is I, PF6, BF4, N(SO2CF3), NCS or N(CN)2.

Abstract: A photosensitizer dye is provided and it is a ruthenium-based complex represented by formula (1): wherein X1 is one of formulae (2) to (7) and X2 is hydrogen (H) or the same as X1; and wherein Y1 is hydrogen, lithium (Li), sodium (Na) or a tetra-alkyl ammonium group represented by formula (8), and Y2 is hydrogen or the same as Y1.

Abstract: There is disclosed herein phosphorescent compounds, uses thereof, and devices including organic light emitting diode (OLEDs) including such compounds. Compounds of interest include: wherein A is Os or Ru The anionic chelating chromophores N?N, which are formed by connecting one pentagonal ring structure containing at least two nitrogen atoms to a hexagonal pyridine type of fragment via a direct carbon-carbon linkage. L is a neutral donor ligand; the typical example includes carbonyl, pyridine, phosphine, arsine and isocyanide; two neutral L's can also combine to produce the so-called chelating ligand such as 2,2?-bipyridine, 1,10-phenanthroline and N-heterocyclic carbene (NHC) ligand, or bidentate phosphorous ligands such as 1,2-bis(diphenylphosphino)ethane, 1,2-bis(diphenylphosphino)benzene. L can occupy either cis or trans orientation.

Abstract: There is disclosed herein phosphorescent compounds, uses thereof, and devices including organic light emitting diode (OLEDs) including such compounds. Compounds of interest include: wherein A is Os or Ru The anionic chelating chromophores NˆN, which are formed by connecting one pentagonal ring structure containing at least two nitrogen atoms to a hexagonal pyridine type of fragment via a direct carbon-carbon linkage. L is a neutral donor ligand; the typical example includes carbonyl, pyridine, phosphine, arsine and isocyanide; two neutral L's can also combine to produce the so-called chelating ligand such as 2,2?-bipyridine, 1,10-phenanthroline and N-heterocyclic carbene (NHC) ligand, or bidentate phosphorous ligands such as 1,2-bis(diphenylphosphino)ethane, 1,2-bis(diphenylphosphino)benzene. L can occupy either cis or trans orientation.

Abstract: There is disclosed herein phosphorescent compounds, uses thereof, and devices including organic light emitting diode (OLEDs) including such compounds. Compounds of interest include: wherein A is Os or Ru The anionic chelating chromophores N{circumflex over (?)}N, which are formed by connecting one pentagonal ring structure containing at least two nitrogen atoms to a hexagonal pyridine type of fragment via a direct carbon-carbon linkage. L is a neutral donor ligand; the typical example includes carbonyl, pyridine, phosphine, arsine and isocyanide; two neutral L's can also combine to produce the so-called chelating ligand such as 2,2?-bipyridine, 1,10-phenanthroline and N-heterocyclic carbene (NHC) ligand, or bidentate phosphorous ligands such as 1,2-bis(diphenylphosphino)ethane, 1,2-bis(diphenylphosphino)benzene. L can occupy either cis or trans orientation.

Abstract: The present invention relates to an etching gas assistant epitaxial method, which is accomplished by introducing etching gas into the processing chamber during epitaxial deposition process. Because the etching gas has different etching rates with respect to grains of different orientations, grains with different sizes and orientations are going to be removed by the etching gas and a fine epitaxial deposited layer can thus be obtained. Furthermore, the method of the present invention can be used for depositing epitaxy on mismatched or amorphous substrates or films, such as oxide, nitride, and even metal substrates, to extend the applications of epitaxy.

Abstract: A high-brightness blue-light emitting crystalline structure is provided for enhancing illuminating intensity of a blue-light emitting diode by taking advantage of a sapphire substrate, which is provided with a multi-layer distributed Bragg reflector (DBR) or a plated mirror layer on its surface for reflecting a part of the light created from a P-GaN surface so as to supplement the other part of light, which penetrates a transparent conductive layer directly. And, indium tin oxide is adopted for serving as a transparent conductive layer of blue-light emitting diode, or an extraordinarily thin nickel/aurum layer is plated on the P-GaN surface precedently before forming the ITO conductive layer to thereby care both the light-permeability and the ohmic contact resistance. A plurality of anti-reflection coatings (ARC) is formed on the ITO conductive layer for the enhancement of blue-light emissivity.

Abstract: A method of manufacturing an inter-metal level dielectric layer for a semiconductor device. The method includes forming spaced conductive lines. Next, a first conformal silicon oxide film (barrier layer) is formed over the spaced conductive lines. Gaps or valleys are between the metal lines covered by the barrier layer. A novel first “gap filling” spin-on-glass layer is formed over the first silicon oxide layer. In a critical step, the first SOG layer is heated to reflow thereby flowing all the first spin-on-glass layer from over the metal lines and leaving all of the first SOG layer in the gaps. Subsequently, a second silicon oxide layer is deposited over the first silicon oxide layer and over the first spin-on-glass layer only in the gaps. A second spin-on-glass layer is then formed over the second silicon oxide layer. An etchback is performed by etching back and removing the entire second spin on glass layer and portions the second silicon oxide layer.