Abstract: The invention relates to the technical field of pump truck control, and discloses a pump truck boom control method, a pump truck boom control system and a pump truck. The pump truck boom control method comprises: detecting a working condition of a boom, wherein the boom is divided into first-type arms close to the first arm and second-type arms close to the last arm in advance; and controlling each arm in the first-type arms to act at respective preset movement speed when the boom is in an opening placing boom working condition before the construction or in a folding placing boom working condition after the construction. The method can realize speed-up control on movement speeds of the each arm in the first-type arms under the opening placing boom working condition before the construction or under the folding placing boom working condition after the construction without a boom posture detection sensors.

Abstract: A multi-procedure integrated automatic production line for hard alloy blades under robot control is provided. The production line includes a rail-guided robot. A cutter passivation device and a blade cleaning and drying device are arranged on one side of the rail-guided robot. A blade-coating transfer table, a blade coating device, a blade boxing transfer table, a blade-tooling dismounting device and a blade boxing device are sequentially arranged on another side of the rail-guided robot. The blade-tooling dismounting device is arranged on one side of the blade boxing transfer table. The production line further includes squirrel-cage toolings for carrying the blades. The squirrel-cage tooling that are loaded with the blades can run among the cutter passivation device, the blade cleaning and drying device, the blade-coating transfer table and the blade boxing transfer table. The blades after being treated through the blade-tooling dismounting device are sent to the blade boxing device.

Abstract: The present disclosure provides a vehicle positioning method, an apparatus and an autonomous driving vehicle, relating to autonomous driving in the technical field of artificial intelligence, which can be applied to high-definition positioning of the autonomous driving vehicle, the method including: if there is no high-definition map in a vehicle, acquiring intermediate pose information of the vehicle based on a global navigation satellite system and/or an inertial measurement unit in the vehicle, and determining the intermediate pose information as global positioning information; acquiring local positioning information; performing fusion processing to the global pose information and the local pose information to obtain fused pose information; performing compensation processing to the fused pose information according to the global attitude angle information and the local attitude angle information to obtain a position of the vehicle.

Abstract: In some examples, a direct current (DC)-DC power converter package comprises a controller, a conductive member, and a first field effect transistor (FET) coupled to the controller and having a first source and a first drain, the first FET coupled to a first portion of the conductive member. The package also comprises a second FET coupled to the controller and having a second source and a second drain, the second FET coupled to a second portion of the conductive member, the first and second portions of the conductive member being non-overlapping in a horizontal plane. The first and second FETs are non-overlapping.

Abstract: In some examples, a semiconductor package comprises a multi-layer package substrate. The multi-layer package substrate includes first and second metal layers, the first metal layer positioned above the second metal layer and coupled to the second metal layer by way of a via. The substrate also includes a dielectric covering at least part of the first and second metal layers and the via. The package includes a plated metal layer plated on at least part of the first metal layer and positioned above the dielectric, a combination of the first metal layer and the plated metal layer being thicker than the second metal layer. The package includes a semiconductor die having a device side, the device side vertically aligned with and coupled to the plated metal layer.

Abstract: In some examples, a semiconductor package comprises a multi-layer package substrate. The multi-layer package substrate includes first and second metal layers, the first metal layer positioned above the second metal layer and coupled to the second metal layer by way of a via. The substrate also includes a dielectric covering at least part of the first and second metal layers and the via. The package includes a plated metal layer plated on at least part of the first metal layer and positioned above the dielectric, a combination of the first metal layer and the plated metal layer being thicker than the second metal layer. The package includes a semiconductor die having a device side, the device side vertically aligned with and coupled to the plated metal layer.

Abstract: The present disclosure discloses an active camera relocation method having robustness to illumination includes the following steps: extracting effective plane region image sets of scenes in a current observation image T and a reference observation image R; establishing a matching relationship in the effective plane region image sets T and R; obtaining a camera relative pose Pi guided by each group of matched planes; obtaining information for guiding the motion of a camera by fusing all camera relative poses Pi; determining whether a relocation process is completed by motion steps.

Abstract: A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

Abstract: A semiconductor package includes a first layer including a semiconductor die embedded within a dielectric substrate, and a first set of metal pillars extending through the dielectric substrate, a second layer stacked on the first layer, the second layer including a metal trace patterned on the dielectric substrate of the first layer, a passive component including at least one capacitor or resistor electrically coupled to the metal trace, and a second set of metal pillars extending from the metal trace to an opposing side of the second layer, and a third layer stacked on the second layer, the third layer including at least one inductor electrically coupled to metal pillars of the second set of metal pillars.

Abstract: In some examples, a direct current (DC)-DC power converter package comprises a controller, a conductive member, and a first field effect transistor (FET) coupled to the controller and having a first source and a first drain, the first FET coupled to a first portion of the conductive member. The package also comprises a second FET coupled to the controller and having a second source and a second drain, the second FET coupled to a second portion of the conductive member, the first and second portions of the conductive member being non-overlapping in a horizontal plane. The first and second FETs are non-overlapping.

Abstract: A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

Abstract: A semiconductor package includes a first layer including a semiconductor die embedded within a dielectric substrate, and a first set of metal pillars extending through the dielectric substrate, a second layer stacked on the first layer, the second layer including a metal trace patterned on the dielectric substrate of the first layer, a passive component including at least one capacitor or resistor electrically coupled to the metal trace, and a second set of metal pillars extending from the metal trace to an opposing side of the second layer, and a third layer stacked on the second layer, the third layer including at least one inductor electrically coupled to metal pillars of the second set of metal pillars.

Abstract: In some examples, a direct current (DC)-DC power converter package comprises a controller, a conductive member, and a first field effect transistor (FET) coupled to the controller and having a first source and a first drain, the first FET coupled to a first portion of the conductive member. The package also comprises a second FET coupled to the controller and having a second source and a second drain, the second FET coupled to a second portion of the conductive member, the first and second portions of the conductive member being non-overlapping in a horizontal plane. The first and second FETs are non-overlapping.

Abstract: Provided is a digital microfluidic device for quick polymerase chain reaction. The digital microfluidic device includes an enclosed chamber for holding droplets comprising PCR mixtures. The chamber has an upper layer and a lower layer, which provide a top heater and a bottom heater contained in a thermal electrode respectively to form dual heaters. The lower layer further has an array of electrodes and a dielectric layer, e.g. Norland Optical adhesive 61, coating thereon. Such arrangement of the digital microfluidic device allows quick and homogeneous heating of droplets to lower the heating voltage, shorten the reaction time, and prevent the dielectric layer from breakdown during the thermal cycle.

Abstract: A semiconductor package includes a first layer including a semiconductor die and a shunt embedded within a first dielectric substrate layer, and metal pillars extending therethrough. The semiconductor package further includes a second layer stacked on the first layer, the second layer including a metal trace patterned on the first dielectric substrate layer, and a second dielectric substrate layer over the metal trace. The metal trace electrically connects a first portion of the shunt to a first metal pillar of the metal pillars and electrically connects a second portion of the shunt to a second metal pillar of the metal pillars. The semiconductor package further includes a base layer opposite the second layer relative the first layer, the base layer forming exposed electrical contact pads for the semiconductor package, the electrical contact pads providing electrical connections to the shunt, the metal pillars, and the semiconductor die.

Abstract: The invention relates to the field of engineering machinery, and discloses a pumping control method and apparatus, a material distribution method and apparatus as well as a distribution device. The pumping control method includes: calculating an initialized pumping speed; controlling a distribution device to pump at the initialized pumping speed; and dynamically adjusting the pumping speed of the distribution device in real time according to a completed real-time distribution volume and real-time distribution time during the pumping of the distribution device until the real-time distribution volume is a desired distribution volume. Therefore, the accuracy of a final distribution volume is improved.

Abstract: A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

Abstract: A system in a package (SIP) includes carrier layer regions that have a dielectric material with a metal post therethrough, where adjacent carrier layer regions define a gap. A driver IC die is positioned in the gap having nodes connected to bond pads exposed by openings in a top side of a first passivation layer, with the bond pads facing up. A dielectric layer is on the first passivation layer and carrier layer region that includes filled through vias coupled to the bond pads and to the metal post. A light blocking layer is on sidewalls and a bottom of the substrate. A first device includes a light emitter that has first bondable features. The light blocking layer can block at least 90% of incident light. The first bondable features are flipchip mounted to a first portion of the bond pads.

Abstract: An antenna in package (AIP) 400 includes an IC die 120 including bond pads 121 and a package substrate including the IC die mounted up and being completely embedded therein. The package substrate includes a top layer 418 including a top dielectric layer 418b, a top metal layer 418a including an antenna 418a1, and a bottom layer 415 including a bottom dielectric 415b and a bottom metal layer 415a including contact pads including a first contact pad 415a1, and filled vias 415c, 417c. The bond pads are electrically coupled by a connection including a filled via(s) for connecting to the top metal layer and/or the bottom metal layer. Metal pillars including a first metal pillar 132a are electrically are coupled to the first contact pad, and at least one filled via is electrically coupled to the first metal pillar for providing a transmission line from the first contact pad to the antenna.

Abstract: A system in a package (SIP) includes carrier layer regions that have a dielectric material with a metal post therethrough, where adjacent carrier layer regions define a gap. A driver IC die is positioned in the gap having nodes connected to bond pads exposed by openings in a top side of a first passivation layer, with the bond pads facing up. A dielectric layer is on the first passivation layer and carrier layer region that includes filled through vias coupled to the bond pads and to the metal post. A light blocking layer is on sidewalls and a bottom of the substrate. A first device includes a light emitter that has first bondable features. The light blocking layer can block at least 90% of incident light. The first bondable features are flipchip mounted to a first portion of the bond pads.