Abstract: A method for manufacturing a semiconductor device is provided, including forming a plurality of fins on a semiconductor substrate, and forming source/drain regions on the fins. The source/drain regions have an uneven surface with a mean surface roughness, Ra, of about 10 nm to about 50 nm. A smoothing layer is formed on the source/drain regions filling the uneven surface. An etch stop layer is formed overlying the smoothing layer. A portion of the etch stop layer is removed to expose a portion of the smoothing layer. The exposed smoothing layer is removed, and a contact layer is formed on the source/drain regions.

Abstract: A source/drain (S/D) structure includes a SiGe structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel portion of a finFET, a first Ge structure having a rounded surface epitaxially grown on the SiGe structure, and a capping layer formed over the rounded surface of the Ge structure. The capping layer may be formed of Si. Such S/D structures provide both a larger physical size for lower contact resistance, and greater volume and concentration of Ge for higher compressive strain applied to the channel portion of the finFET.

Abstract: A method for manufacturing a semiconductor device is provided, including forming a plurality of fins on a semiconductor substrate, and forming source/drain regions on the fins. The source/drain regions have an uneven surface with a mean surface roughness, Ra, of about 10 nm to about 50 nm. A smoothing layer is formed on the source/drain regions filling the uneven surface. An etch stop layer is formed overlying the smoothing layer. A portion of the etch stop layer is removed to expose a portion of the smoothing layer. The exposed smoothing layer is removed, and a contact layer is formed on the source/drain regions.

Abstract: A source/drain (S/D) structure includes a SiGe structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel portion of a finFET, a first Ge structure having a rounded surface epitaxially grown on the SiGe structure, and a capping layer formed over the rounded surface of the Ge structure. The capping layer may be formed of Si. Such S/D structures provide both a larger physical size for lower contact resistance, and greater volume and concentration of Ge for higher compressive strain applied to the channel portion of the finFET.

Abstract: A plasma system with an injection device is provided. The plasma system comprises a plasma cavity and an injection device. The plasma cavity comprises a first electrode and a second for generating plasma. The injection device comprises a plasma injection tube and at least a reactant injection tube. The plasma injection tube is connected to the plasma cavity. The plasma injection tube comprises an inlet, an outlet and an outer sidewall. The plasma injection tube injects the plasma from the inlet and guides the plasma out through the outlet. The outer sidewall has a width decreasing from the inlet to the outlet. The reactant injection tube is disposed outside of the outer sidewall. The reactant injection tube injects a reactant to the outer sidewall so that the reactant flows along the outer sidewall toward the outlet and mixes with the plasma at the outlet.

Abstract: A display including a body and an elevation adjusting base is provided. The elevation adjusting base is secured to the body. The elevation adjusting base includes a base, an elevation adjusting mechanism, an outer bushing, an inner bushing and a friction ring. The elevation adjusting mechanism is connected to the base. The outer bushing is connected to the base and mounted on the elevation adjusting mechanism. The inner bushing is embedded inside the outer bushing. The friction ring is disposed between the outer bushing and the inner bushing. After the elevation of the elevation adjusting mechanism is adjusted, the friction ring provides a friction force between the outer bushing and the inner bushing to fix the elevation of the elevation adjusting mechanism. Users can accurately adjust the elevation of the display panel according to the view-angle and personal preferences.

Abstract: An electronic device comprises a body and an arm member disposed on the body. The body has a reference point. The arm member is moved between a first status, a second status and a third status. When the arm member is situated at the first status, the arm member relatively supports the body with respect to the reference point of the body. When the arm member is situated at the second status, the arm member relatively carries or suspends the body with respect to the reference point of the body.

Abstract: A base for a supporting apparatus is provided. The base includes a chassis and a foot member accommodated in the chassis. The foot member is retractable and capable of being stretched out from the chassis.

Abstract: An electronic device. An image configuration is disposed on a housing of the electronic device. The image configuration comprises a base and a patterned portion. The patterned portion has a center of gravity differing from a rotation center that pivoted on the base. When the electronic device is in a forth orientation, a line between the center of gravity and the rotation center of the patterned portion is substantially parallel to a direction of gravity.

Abstract: An electronic device comprises a body and an arm member disposed on the body. The body has a reference point. The arm member is moved between a first status, a second status and a third status. When the arm member is situated at the first status, the arm member relatively supports the body with respect to the reference point of the body. When the arm member is situated at the second status, the arm member relatively carries or suspends the body with respect to the reference point of the body.

Abstract: A display including a body and an elevation adjusting base is provided. The elevation adjusting base is secured to the body. The elevation adjusting base includes a base, an elevation adjusting mechanism, an outer bushing, an inner bushing and a friction ring. The elevation adjusting mechanism is connected to the base. The outer bushing is connected to the base and mounted on the elevation adjusting mechanism. The inner bushing is embedded inside the outer bushing. The friction ring is disposed between the outer bushing and the inner bushing. After the elevation of the elevation adjusting mechanism is adjusted, the friction ring provides a friction force between the outer bushing and the inner bushing to fix the elevation of the elevation adjusting mechanism. Users can accurately adjust the elevation of the display panel according to the view-angle and personal preferences.

Abstract: An electronic device. An image configuration is disposed on a housing of the electronic device. The image configuration comprises a base and a patterned portion. The patterned portion has a center of gravity differing from a rotation center that pivoted on the base. When the electronic device is in a forth orientation, a line between the center of gravity and the rotation center of the patterned portion is substantially parallel to a direction of gravity.