Abstract: The technical field of active substance preparations is belonged to, and provided are astaxanthin pickering emulsion with colon targeted delivery function, and a preparation method and application method thereof. The preparation method includes the following steps: S1, reparation of deacetylated-oxidized chitin nanofiber (DE-TO-ChNF)/carboxymethyl konjac glucomannan (CMKGM) nanogel; S2, preparation of astaxanthin oil phase; and S3, preparation astaxanthin pickering emulsion. Natural polysaccharide derivatives DE-TO-ChNF and CMKGM are used as raw materials, and stable crosslinking between covalent bonds and non-covalent bonds are formed between molecules in a composite system through the NHS/EDC, so as to form a stable nanogel. Then the nanogel is used as emulsifier and flaxseed oil rich in astaxanthin is used as oil phase to prepare the astaxanthin pickering emulsion by homogenization.

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Abstract: The present invention relates to a carbide tool cleaning and coating production line and a method, including a cleaning device including a support frame, a cleaning mechanism and a drying mechanism are sequentially disposed under the support frame connected to a moving mechanism, the moving mechanism is connected to a lifting mechanism being capable of being connected to a tool fixture bracket being configured to accommodate the tool fixture; a coating device including a coating chamber which a plane target mechanism and a turntable assembly disposed in, the turntable assembly is capable of being connected to a plurality of tool fixtures being capable of rotating around an axial line of the coating chamber under the driving of the turntable assembly and rotating around an axial line thereof at the same time; and, a manipulator being disposed between the cleaning device and the coating device.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: The memory device includes a memory block with an array of memory cells. The memory device also includes control circuitry that is in communication with the memory cells. The control circuitry is configured to program a group of the memory cells in a programming operation that does not include verify to obtain a natural threshold voltage (nVt) distribution, calculate an nVt width of the nVt distribution, compare the nVt width to a threshold, and identify the memory block as being vulnerable to cross-temperature read errors in response to the nVt width exceeding the threshold.

Abstract: The invention relates to the technical field of pump truck control, and discloses a pump truck boom control method, a pump truck boom control system and a pump truck. The pump truck boom control method comprises: detecting a working condition of a boom, wherein the boom is divided into first-type arms close to the first arm and second-type arms close to the last arm in advance; and controlling each arm in the first-type arms to act at respective preset movement speed when the boom is in an opening placing boom working condition before the construction or in a folding placing boom working condition after the construction. The method can realize speed-up control on movement speeds of the each arm in the first-type arms under the opening placing boom working condition before the construction or under the folding placing boom working condition after the construction without a boom posture detection sensors.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A display may have a pixel array such as a liquid crystal pixel array. The pixel array may be illuminated with backlight illumination from a direct-lit backlight unit. The backlight unit may include an array of light-emitting diodes (LEDs) on a printed circuit board. The display may have a notch to accommodate an input-output component. Reflective layers may be included in the notch. The backlight may include a color conversion layer with a property that varies as a function of position. The light-emitting diodes may be covered by a slab of encapsulant with recesses in an upper surface.

Abstract: The technology of this application relates to a frontlight module and a display apparatus. The frontlight module is disposed on a side of a display panel. The frontlight module includes a light source, a light guide plate, and light guide dots. The light guide plate includes a first surface and a second surface that are disposed opposite to each other. The display panel is disposed facing the second surface. The light source is disposed on a side surface of the light guide plate. A plurality of light guide dots are disposed on the first surface or the second surface of the light guide plate. Each light guide dot has a light guide surface disposed at an angle with respect to a surface of the light guide plate. Light is fully reflected and/or refracted on the light guide surfaces to propagate to the display panel.

Abstract: Disclosed is a high-precision dynamic real-time 360-degree omnidirectional point cloud acquisition method based on fringe projection. The method comprises: firstly, by means of the fringe projection technology based on a stereoscopic phase unwrapping method, and with the assistance of an adaptive dynamic depth constraint mechanism, acquiring high-precision three-dimensional (3D) data of an object in real time without any additional auxiliary fringe pattern; and then, after a two-dimensional (2D) matching points optimized by the means of corresponding 3D information is rapidly acquired, by means of a two-thread parallel mechanism, carrying out coarse registration based on Simultaneous Localization and Mapping (SLAM) technology and fine registration based on Iterative Closest Point (ICP) technology.

Abstract: Provided are small molecule inhibitors of the KRAS(G12D) mutant oncoprotein having the structural formula: and pharmaceutically acceptable salts and compositions thereof, which are useful for treating cancers and related conditions.

Abstract: A multi-procedure integrated automatic production line for hard alloy blades under robot control is provided. The production line includes a rail-guided robot. A cutter passivation device and a blade cleaning and drying device are arranged on one side of the rail-guided robot. A blade-coating transfer table, a blade coating device, a blade boxing transfer table, a blade-tooling dismounting device and a blade boxing device are sequentially arranged on another side of the rail-guided robot. The blade-tooling dismounting device is arranged on one side of the blade boxing transfer table. The production line further includes squirrel-cage toolings for carrying the blades. The squirrel-cage tooling that are loaded with the blades can run among the cutter passivation device, the blade cleaning and drying device, the blade-coating transfer table and the blade boxing transfer table. The blades after being treated through the blade-tooling dismounting device are sent to the blade boxing device.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: The disclosure relates to an apparatus and method for liquid cooling of an electronic component. A housing includes an insertion slot and defines at least one component chamber for carrying the electronic component. A fluid inlet and fluid outlet are provided on the housing. A liquid coolant circuit passes through the housing at least from the inlet to the outlet.

Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

Abstract: Methods and systems for performing model-less measurements of semiconductor structures based on scatterometry measurement data are described herein. Scatterometry measurement data is processed directly, without the use of a traditional measurement model. Measurement sensitivity is defined by the changes in detected diffraction images at one or more non-zero diffraction orders over at least two different illumination incidence angles. Discrete values of a scalar function are determined directly from measured images at each incidence angle. A continuous mathematical function is fit to the set of discrete values of the scalar function determined at each incidence angle. A value of a parameter of interest is determined based on analysis of the mathematical function. In some embodiments, the scalar function includes a weighting function, and the weighting values associated with weighting function are optimized to yield an accurate fit of the mathematical function to the scalar values.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.

Abstract: A card riser for an information handling system includes a bottom surface, multiple connector slots in physical communication with the bottom surface, and a locking mechanism in physical communication with the bottom surface. Each connector slot is configured to receive a corresponding connector of a different one of multiple cards. When the locking mechanism is in an unlocked position, a different one of the cards is inserted within a different one of the connector slots. When the locking mechanism is in a locked position, the locking mechanism is placed in physical communication with each of the cards to securely hold the cards within the card riser.