Abstract: A substrate includes a driving backplane, a plurality of first connecting lines and a plurality of second connecting lines. The driving backplane includes a base substrate, at least one first lead group and at least one second lead group. Each first lead group includes a plurality of first leads, and each second lead group includes a plurality of second leads. A first lead group and a corresponding second lead group is disposed in a peripheral region. The plurality of first connecting lines are disposed on at least one side face of the driving backplane, each first connecting line is electrically connected to at least one first lead. The plurality of second connecting lines are disposed on the at least one side face of the driving backplane, each second connecting line is electrically connected to at least one second lead, and is in contact with a corresponding first connecting line.

Abstract: Disclosed are a near-eye display device and a near-eye display system. The excitation light source structure provides excitation light to the first waveguide structure, and the outgoing coupling grating structure corresponding to the first waveguide structure receiving the excitation light may be further irradiated by the excitation light, and be excited and output the light with a pixel color corresponding to the first waveguide structure. That is, the outgoing coupling grating structure corresponding to the first waveguide structure receiving the excitation light can derive the light with the corresponding pixel color emitted by the projection-based display, and be excited by the excitation light emitted by the excitation light source structure to output light with a pixel color corresponding to the first waveguide structure.

Abstract: A method of manufacturing thin film transistor(s) includes: providing a monocrystalline silicon wafer, the monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other; forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness; providing a substrate, and transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer; and patterning the monocrystalline silicon film transferred to the substrate to form active layer(s) of the thin film transistor(s).

Abstract: A mask and a method of manufacturing the same, an evaporation apparatus and a display device are provided. The method includes forming a first photoresist pattern on a substrate, the first photoresist pattern including a plurality of photoresist structures, each photoresist structure including a first surface away from the substrate and a second surface near the substrate, and the size of the first surface being smaller than that of the second surface; forming a metal layer on the substrate with the first photoresist pattern, the metal layer including a plurality of recessed regions and a plurality of raised regions; forming a second photoresist pattern in the recessed regions, an orthographic projection of the second photoresist pattern on the metal layer overlapping with the recessed regions; removing regions of the metal layer not covered by the second photoresist pattern, the second photoresist pattern, the substrate and the first photoresist pattern mask.

Abstract: Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.

Abstract: The display panel includes a base substrate; and display areas arranged on the base substrate; each of the display areas includes pixel units; each of the pixel units includes sub-pixels; each of the sub-pixels includes a light-emitting chip; in any one of the display areas, a space between two adjacent columns of pixel units in a row direction has a first space size; and a space between two adjacent rows of pixel units in a column direction has a second space size; a space between two nearest display areas in the row direction has a third space size, and the third space size is approximately same as the first space size; and/or a space between two nearest display areas in the column direction has a fourth space size, and the fourth space size is approximately same as the second space size.

Abstract: A peeping prevention structure, a display device and a display method are provided. The peeping prevention structure includes: a first electrode and a second electrode opposite to each other; a plurality of transparent columnar cavities between the first electrode and the second electrode, wherein a plurality of opening regions are defined between the plurality of transparent columnar cavities, and each of the plurality of transparent columnar cavities is filled with charged light-absorbing particles; wherein, the charged light-absorbing particles are configured to, under a control of an electric field between the first electrode and the second electrode, be uniformly diffused in the transparent columnar cavity or be concentrated at an end of the transparent columnar cavity.

Abstract: A method of forming an array substrate, the array substrate and a display device are provided. The method of forming the array substrate includes: in a case that a display unit is formed on one of two opposite surfaces of a base substrate and a driving circuit is formed on the other of the two opposite surfaces of the base substrate, performing a roughening treatment on edge regions of the two opposite surfaces of the base substrate and a side surface of the base substrate connecting the edge regions of the two opposite surfaces, to form a roughened region; and forming, at the roughened region, a metal wiring connecting a signal input terminal of the display unit and a signal output terminal of the driving circuit.

Abstract: A display apparatus having a plurality of subpixels is provided. The display apparatus includes an array substrate and a counter substrate facing the array substrate. The counter substrate includes a base substrate; an optical compensation device on the base substrate configured to adjust light emitting brightness values of the plurality of subpixels to target brightness values respectively; and a plurality of light shielding walls on the base substrate. The optical compensation device include a plurality of photosensors configured to respectively detect light emitting brightness values of the plurality of subpixels. A respective one of the plurality of light shielding walls is configured to at least partially shield a lateral side of a respective one of the plurality of photosensors from light emitted from adjacent subpixels.

Abstract: A surface light source and a manufacturing method thereof and a liquid crystal display device. The surface light source includes a substrate; a plurality of light emitting diode dies arranged in an array along a row direction and a column direction on the substrate; a driving circuit on the substrate and electrically connected to the plurality of light emitting diode dies and the driving circuit being configured to control at least two of the plurality of light emitting diode dies to emit light independently of each other; and an encapsulation layer on a side of the plurality of light emitting diode dies away from the substrate. The encapsulation layer is a continuous film layer covering the plurality of light emitting diode dies.

Abstract: A light guide plate, a backlight module and a display device are provided. A plurality of blind holes is arranged at a surface of the light guide plate; the blind hole is filled with a light-converting unit; the light-converting unit includes an accommodating cavity made of a light-transmitting material, and a light-converting material located in the accommodating cavity; and a gap is between an outer wall of the accommodating cavity and an inner wall of the blind hole.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display panel are provided. The thin film transistor includes an active layer and a wire grid which is disposed at least on a surface of an active region of the active layer and is made of a conductive material. The active layer includes a source region, a drain region, and the channel region between the source region and the drain region. The wire grid includes a plurality of wire grid sections which are spaced apart from each other, and in a direction from the source region to the drain region, a length of the channel region is longer than a length of the wire grid section.

Abstract: The present application provides an optical modulating device having a light transmissive region and a light blocking region. The optical modulating device includes a base substrate; a plurality of protrusions on the base substrate in the light transmissive region and configured to allow light emitting out of a side of the optical modulating device; and a reflective layer on the base substrate in the light blocking region and configured to block light from emitting out of the side of the optical modulating device.

Abstract: A method of manufacturing thin film transistor(s) includes: providing a monocrystalline silicon wafer, the monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other; forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness; providing a substrate, and transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer; and patterning the monocrystalline silicon film transferred to the substrate to form active layer(s) of the thin film transistor(s).

Abstract: The present disclosure relates to a display panel. The display panel includes a light switching layer, and a color film layer located on the light switching layer, wherein the color film layer includes a diffraction grating. The color film layer further includes a collimating layer located on a side of the diffraction grating facing away from the light switching layer. The color film layer further includes a light splitting layer located between the diffraction grating and the light switching layer.

Abstract: The present application discloses an array substrate, a display apparatus and a method of fabricating an array substrate. The array substrate has a plurality of first bottom-gate type thin film transistors each of which including a metal oxide active layer and a plurality of second bottom-gate type thin film transistors each of which including a silicon active layer.

Abstract: Disclosed are a near-eye display device and a near-eye display system. The excitation light source structure provides excitation light to the first waveguide structure, and the outgoing coupling grating structure corresponding to the first waveguide structure receiving the excitation light may be further irradiated by the excitation light, and be excited and output the light with a pixel color corresponding to the first waveguide structure. That is, the outgoing coupling grating structure corresponding to the first waveguide structure receiving the excitation light can derive the light with the corresponding pixel color emitted by the projection-based display, and be excited by the excitation light emitted by the excitation light source structure to output light with a pixel color corresponding to the first waveguide structure.

Abstract: This disclosure provides a liquid crystal display panel. The liquid crystal display panel comprises: a first substrate and a second substrate arranged oppositely, a plurality of main spacers located between the first substrate and the second substrate for supporting cell gap of the liquid crystal display panel, a plurality of auxiliary spacers located between the first substrate and the second substrate, and a plurality of pressure sensing electrodes in one-to-one correspondence with the plurality of auxiliary spacers; wherein a height of the auxiliary spacer is smaller than a height of the main spacer; a material of the auxiliary spacer is a piezoelectric material. This disclosure also discloses a manufacturing method of the liquid crystal display panel and a display device comprising the liquid crystal display panel.

Abstract: A display apparatus having a plurality of subpixels is provided. The display apparatus includes an array substrate and a counter substrate facing the array substrate. The counter substrate includes a base substrate; an optical compensation device on the base substrate configured to adjust light emitting brightness values of the plurality of subpixels to target brightness values respectively; and a plurality of light shielding walls on the base substrate. The optical compensation device include a plurality of photosensors configured to respectively detect light emitting brightness values of the plurality of subpixels. A respective one of the plurality of light shielding walls is configured to at least partially shield a lateral side of a respective one of the plurality of photosensors from light emitted from adjacent subpixels.

Abstract: A light guide plate, a backlight module and a display device are provided. A plurality of blind holes is arranged at a surface of the light guide plate; the blind hole is filled with a light-converting unit; the light-converting unit includes an accommodating cavity made of a light-transmitting material, and a light-converting material located in the accommodating cavity; and a gap is between an outer wall of the accommodating cavity and an inner wall of the blind hole.