Abstract: A semiconductor structure includes a first transistor, a second transistor, a first dummy source/drain, a third transistor, a fourth transistor, and a second dummy source/drain. The first transistor and a second transistor adjacent to the first transistor are at a first elevation. The first dummy source/drain is disposed at the first elevation. The third transistor and a fourth transistor adjacent to the third transistor, are at a second elevation different from the first elevation. The second dummy source/drain is disposed at the second elevation. The second transistor is vertically aligned with the third transistor. The first dummy source/drain is vertically aligned with a source/drain of the fourth transistor. The second dummy source/drain is vertically aligned with a source/drain of the first transistor. The gate structure between the second dummy source/drain and a source/drain of the third transistor is absent. A method for manufacturing a semiconductor structure is also provided.

Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A semiconductor device includes one or more active semiconductor components, wherein a front side is defined over the semiconductor substrate and a back side is defined beneath the semiconductor substrate. A front side power rail is formed at the front side of the semiconductor device and is configured to receive a first reference power voltage. First and second back side power rails are formed on the back side of the semiconductor substrate and are configured to receive corresponding second and third reference power voltages. The first, second and third reference power voltages are different from each other.

Abstract: An integrated circuit includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail extending in a first direction. A first distance between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance between the long edge of the second power rail and the first alignment boundary of the second-type active zone. Each of the first distance and the second distance is along a second direction which is perpendicular to the first direction.

Abstract: A semiconductor device, includes a first metal layer, a second metal layer, a drain/source contact and at least one conductive via. The first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor. The second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. The drain/source contact extends in the second direction and is connected to the second conductor. The at least one conductive via connects the first conductor and the second conductor through the third conductor.

Abstract: A display device and a signal source switching method therefore are provided. The display device is connected with a first signal source device and a second signal source device and includes a switching circuit, a receiver circuit and a control circuit. The switching circuit includes a first connection port and a second connection port, which are respectively connected to the first signal source device and the second signal source device. When the control circuit receives a signal source switching command, the control circuit records a current operating state of each of the first signal source device and the second signal source device. When the control circuit receives an active source command from the first signal source device, the control circuit refers to the current operating state to control the switching circuit to switch the image signal source to the first signal source device or the second signal source device.

Abstract: A semiconductor device includes a transistor layer, a first via layer over the transistor layer, a first metallization layer over the first via layer, the first metallization layer including first conductors having long axes extending substantially in a first direction, a second via layer over the first metallization layer, and a conductive deep via extending in the second via layer, the first metallization layer, and the first via layer. The first conductors represent a majority of conductive material in the first metallization layer, and a size of the deep via in the first direction in the first metallization layer is substantially less than a minimum length of the first conductors in the first metallization layer.

Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

Abstract: An integrated circuit includes a first terminal-conductor, a second terminal-conductor, and a gate-conductor between the first terminal-conductor and the second terminal-conductor. The first terminal-conductor intersects both an active-region structure and a power rail. The second terminal-conductor intersects the active-region structure without intersecting the power rail. The gate-conductor intersects the active-region structure and is adjacent to the first terminal-conductor and the second terminal-conductor. A first width of the first terminal-conductor is larger than a second width of the second terminal-conductor by a predetermined amount.

Abstract: An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. The second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. The first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. The second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.

Abstract: An antenna device and a method for configuring the same are provided. The antenna device includes a grounding metal, a grounding part, a radiating part, a feeding part, a proximity sensor, and a sensing metal. The radiating part is electrically connected to the grounding metal through the grounding part. The feeding part is coupled to the grounding metal through a feeding point. The sensing metal is electrically connected to the proximity sensor. The sensing metal is separated from the radiating part at a distance. The distance is less than or equal to one thousandth of a wavelength corresponding to an operating frequency of the antenna device.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: An integrated circuit is provided and includes a multi-bit cell having multiple bit cells disposed in multiple cell rows. The bit cells include M bit cells, M being positive integers. A first bit cell of the bit cells and a M-th bit cell of the bit cells are arranged diagonally in different cell rows in the multi-bit cell. The multi-bit cell includes first to fourth cell boundaries. The first and second boundaries extend in a first direction and the third and fourth boundaries extend in a second direction different from the first direction. The first bit cell and a second bit cell of the bit cells abut the third cell boundary, and the first bit cell and a (M/2+1)-th bit cell of the bit cells abut the first cell boundary.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A vibration motor having an insulating housing, a bidirectional coil and a magnetic ring is provided. The insulating housing is of cylindrical shape and at least three position-limiting ribs are protruded from an internal surface thereof. Each position-limiting rib is extended parallel to a central axial line of the insulating housing. The insulating housing has a pair of end plates on two ends thereof. The end plates are made of insulating material. The bidirectional coil is accommodated in the insulating housing and spaced apart from the internal surface of the insulating housing. The magnetic ring is movably accommodated in the insulating housing, and the magnetic ring is arranged coaxially with the insulating housing to surround the bidirectional coil. The position-limiting ribs are disposed adjacent to the magnetic ring and surround an outer edge of the magnetic ring.

Abstract: An ion-conducting material, a core-shell structure containing the ion-conducting material, an electrode prepared with the core-shell structure and a metal-ion battery employing the electrode are provided. The core-shell structure includes a core particle and an organic-inorganic composite layer formed on the surface of the core particle for encapsulating the core particle. The core particle includes lithium cobalt oxide, lithium nickel cobalt oxide, lithium nickel cobalt manganese oxide, or lithium nickel cobalt aluminum oxide. Also, the organic-inorganic composite layer includes nitrogen-containing hyperbranched polymer and an ion-conducting material. The ion-conducting material is a lithium-containing linear polymer or a modified Prussian blue, wherein the modified Prussian blue has an ion-conducting group and the lithium-containing linear polymer has an ion-conducting segment.

Abstract: A vibration motor having an insulating housing, a bidirectional coil and a magnetic ring is provided. The insulating housing is of cylindrical shape and at least three position-limiting ribs are protruded from an internal surface thereof. Each position-limiting rib is extended parallel to a central axial line of the insulating housing. The insulating housing has a pair of end plates on two ends thereof. The end plates are made of insulating material. The bidirectional coil is accommodated in the insulating housing and spaced apart from the internal surface of the insulating housing. The magnetic ring is movably accommodated in the insulating housing, and the magnetic ring is arranged coaxially with the insulating housing to surround the bidirectional coil. The position-limiting ribs are disposed adjacent to the magnetic ring and surround an outer edge of the magnetic ring.

Abstract: An ion-conducting material, a core-shell structure containing the ion-conducting material, an electrode prepared with the core-shell structure and a metal-ion battery employing the electrode are provided. The core-shell structure includes a core particle and an organic-inorganic composite layer formed on the surface of the core particle for encapsulating the core particle. The core particle includes lithium cobalt oxide, lithium nickel cobalt oxide, lithium nickel cobalt manganese oxide, or lithium nickel cobalt aluminum oxide. Also, the organic-inorganic composite layer includes nitrogen-containing hyperbranched polymer and an ion-conducting material. The ion-conducting material is a lithium-containing linear polymer or a modified Prussian blue, wherein the modified Prussian blue has an ion-conducting group and the lithium-containing linear polymer has an ion-conducting segment.

Abstract: A lithium battery structure is provided. The lithium battery structure includes a first metal layer including aluminum foil or stainless steel foil, a second metal layer including copper foil, nickel foil or stainless steel foil, a separator, a first electrode layer, a second electrode layer, and a first functional layer including a first composition. The separator is disposed between the first metal layer and the second metal layer. The first electrode layer is disposed between the first metal layer and the separator. The second electrode layer is disposed between the second metal layer and the separator. The first functional layer is disposed between the first metal layer and the first electrode layer. The first composition includes 20-80 parts by weight of flake conductive material, 1-30 parts by weight of spherical conductive material, 10-50 parts by weight of thermoplastic elastomer and 1-25 parts by weight of nitrogen-containing hyperbranched polymer.

Abstract: An additive formulation for a lithium ion battery is provided, which includes an ionic conductor and a compound having a maleimide structure. An electrode slurry composition is also provided, which includes an active material, a conductive additive, an adhesive, and an additive formulation containing an ionic conductor and a compound having a maleimide structure modified by a compound having a barbituric acid structure.