Abstract: The present invention relates to a method for preparing a thermoelectric thick film. The method includes: determining a brittle-to-ductile transition temperature of a thermoelectric material; rolling the blocky thermoelectric material within a temperature range above the brittle-to-ductile transition temperature and below a melting point; parameters of the rolling being as follows: a linear speed of rollers is 0.01 mm/s to 10 mm/s, preferably 0.1 mm/s to 5 mm/s, and an amount of pressing each time of the rollers is controlled at 0.0005 mm to 0.1 mm, preferably 0.001 mm to 0.05 mm; repeating the rolling until a thermoelectric thick film with a specified thickness is obtained; and annealing the obtained thermoelectric thick film; a temperature of the annealing being 100° C. to 800° C., preferably 300° C. to 500° C., and a duration of the annealing being 10 to 500 hours, preferably 100 to 300 hours.

Abstract: The present invention relates to a method for preparing a thermoelectric thick film. The method includes: determining a brittle-to-ductile transition temperature of a thermoelectric material; rolling the blocky thermoelectric material within a temperature range above the brittle-to-ductile transition temperature and below a melting point; parameters of the rolling being as follows: a linear speed of rollers is 0.01 mm/s to 10 mm/s, preferably 0.1 mm/s to 5 mm/s, and an amount of pressing each time of the rollers is controlled at 0.0005 mm to 0.1 mm, preferably 0.001 mm to 0.05 mm; repeating the rolling until a thermoelectric thick film with a specified thickness is obtained; and annealing the obtained thermoelectric thick film; a temperature of the annealing being 100° C. to 800° C., preferably 300° C. to 500° C., and a duration of the annealing being 10 to 500 hours, preferably 100 to 300 hours.

Abstract: This application discloses a virtual machine (VM) hot migration method, an apparatus, and a storage medium. A method for virtual machine (VM) hot migration is described. Processing circuitry of a first host machine identifies that a memory block in a storage device of the first host machine is allocated to a virtual machine to migrate. Further, the processing circuitry determines whether the memory block is data-containing. When the memory block is data-containing, interface circuitry of the first host machine sends data in the memory block to a second host machine. When the memory block is not data-containing, the memory block is skipped for migration.

Abstract: The present invention relates to a P-type high-performance thermoelectric material featuring reversible phase change, and a preparation method therefor. The thermoelectric material has a chemical composition of Cu2Se1-xIx, wherein 0<x?0.08. The method comprises: weighing elemental copper metal, elemental selenium metal, and cuprous iodide according to the molar ratio (2?x):(1?x):x, and packaging them in a vacuum; raising the temperature to 1150-1170° C. in stages and performing a melting treatment for 12-24 hours; lowering the temperature to 600-700° C. in stages and then performing an annealing treatment for 5-7 days, the substances being cooled to room temperature in a furnace after the annealing treatment; and performing pressure sintering at 400-500° C.

Abstract: This application discloses a virtual machine (VM) hot migration method, an apparatus, and a storage medium. A method for virtual machine (VM) hot migration is described. Processing circuitry of a first host machine identifies that a memory block in a storage device of the first host machine is allocated to a virtual machine to migrate. Further, the processing circuitry determines whether the memory block is data-containing. When the memory block is data-containing, interface circuitry of the first host machine sends data in the memory block to a second host machine. When the memory block is not data-containing, the memory block is skipped for migration.

Abstract: The present invention relates to a P-type high-performance thermoelectric material featuring reversible phase change, and a preparation method therefor. The thermoelectric material has a chemical composition of Cu2Se1-xIx, wherein 0<x?0.08. The method comprises: weighing elemental copper metal, elemental selenium metal, and cuprous iodide according to the molar ratio (2?x):(1?x):x, and packaging them in a vacuum; raising the temperature to 1150-1170° C. in stages and performing a melting treatment for 12-24 hours; lowering the temperature to 600-700° C. in stages and then performing an annealing treatment for 5-7 days, the substances being cooled to room temperature in a furnace after the annealing treatment; and performing pressure sintering at 400-500° C.

Abstract: A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a ? shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti.

Abstract: A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05?y<1; and GaSb particles within the filled skutterudite matrix, wherein the composite material comprises 0.05-5 mol % GaSb particles. Compared with conventional materials, the composite material exhibits a substantially increased Seebeck coefficient, a slightly decreased overall thermal conductivity, and a substantially increased thermoelectric performance index across the whole temperature zone from the low temperature end to the high temperature end, as well as a greatly enhanced thermoelectric efficiency.

Abstract: The disclosure relates to a p-type skutterudite material and a method of making the same, comprising providing a p-type skutterudite material having a general formula: IyFe4-xMxSb12/z(J) wherein I represents one or more filling atoms in a skutterudite phase, the total filling amount y satisfying 0.01?y?1; M represents one or more dopant atoms with the doping amount x satisfying 0?x?4; J represents one or more second phases with the molar ratio z satisfying 0?z?0.5; wherein second phase precipitates are dispersed throughout the skutterudite phase.

Abstract: A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05?y<1; and GaSb particles within the filled skutterudite matrix, wherein the composite material comprises 0.05-5 mol % GaSb particles. Compared with conventional materials, the composite material exhibits a substantially increased Seebeck coefficient, a slightly decreased overall thermal conductivity, and a substantially increased thermoelectric performance index across the whole temperature zone from the low temperature end to the high temperature end, as well as a greatly enhanced thermoelectric efficiency.

Abstract: A process for making a composite material and the composite materials having thermoelectric properties.

Abstract: A method of improving the thermoelectric figure of merit (ZT) of a high-efficiency thermoelectric material is disclosed. The method includes the addition of fullerene (C60) clusters between the crystal grains of the material. It has been found that the lattice thermal conductivity (?L) of a thermoelectric material decreases with increasing fullerene concentration, due to enhanced phonon-large defect scattering. The resulting power factor (S2/?) decrease of the material is offset by the lattice thermal conductivity reduction, leading to enhanced ZT values at temperatures of between 350 degrees K and 700 degrees K.

Abstract: A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a ? shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti.

Abstract: A coating for thermoelectric materials includes a thermoelectric layer having a thermoelectric material, a metal coating of one or more layers forming a surface in contact with the thermoelectric layer and an opposing surface, and a metal oxide coating of one or more layers including metal oxides, wherein the metal oxide coating forms a surface in contact with the opposing surface. A device comprises the material and a process for fabricating the same.

Abstract: A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a ? shaped thermoelectric device.

Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.

Abstract: A clathrate compound of formula (I): M8AxBy-x (I) wherein: M is an alkaline earth metal, a rare earth metal, an alkali metal, Cd, or a combination thereof, A is Ga, Al, In, Zn or a combination thereof; B is Ge, Si, Sn, Ni or a combination thereof; and 12?x?16, 40?y?43, x and y each is or is not an integer. Embodiments of the invention also include method of making and using the clathrate compound.

Abstract: A process for making a composite material and the composite materials having thermoelectric properties

Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.

Abstract: A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a ? shaped thermoelectric device.