Abstract: A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a ? shaped thermoelectric device.

Abstract: Interstitial voids of the cubic CoSb3 type skutterudite structure can be filled with sodium and/or potassium atoms. Such filled skutterudites have the general formulas, KyCo4Sb12 and NayCo4Sb12, where y indicates the filling fraction of potassium and sodium, respectively, in the CoSb3 cubic crystal structure, and has a value greater than zero and less than one. Also sodium-filled and/or potassium-filled skutterudites of the general formula, (K, Na)yT4Pn12 are made, where T denotes Fe, Ru, Os, Co, Rh, or Ir; and “Pn” denotes one of the pnicogen elements P, As, or Sb. Again, y has values less than one.

Abstract: A thermoelectric material includes a filled skutterudite crystal structure having the formula GyM4X12, where i) G includes at least two rare earth elements and an alkaline earth element, ii) M is cobalt, rhodium, or iridium, and iii) X is antimony, phosphorus, or arsenic. The subscript “y” refers to a crystal structure filling fraction ranging from about 0.001 to about 0.5.

Abstract: In general, in one aspect, the disclosure describes an apparatus that included a reference generator to receive a differential input signal and generate reference voltages having same common mode as the differential input signal. A replica bias generator is used to generate a bias signal based on the reference voltages. A comparator is used to compare the input signals to threshold voltages that are based at least in part on the bias signal.

Abstract: One exemplary embodiment includes a materials and devices comprising a multi-element filled skutterudite type body-centered cubic crystal structure including GyM4X12, wherein G is at least two elements. The material may include n-type or p-type doping.

Abstract: In general, in one aspect, the disclosure describes an apparatus that included a reference generator to receive a differential input signal and generate reference voltages having same common mode as the differential input signal. A replica bias generator is used to generate a bias signal based on the reference voltages. A comparator is used to compare the input signals to threshold voltages that are based at least in part on the bias signal.

Abstract: A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.

Abstract: A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.

Abstract: A method of improving the thermoelectric figure of merit (ZT) of a high-efficiency thermoelectric material is disclosed. The method includes the addition of fullerene (C60) clusters between the crystal grains of the material. It has been found that the lattice thermal conductivity (?L) of a thermoelectric material decreases with increasing fullerene concentration, due to enhanced phonon-large defect scattering. The resulting power factor (S2/?) decrease of the material is offset by the lattice thermal conductivity reduction, leading to enhanced ZT values at temperatures of between 350 degrees K and 700 degrees K.

Abstract: A method in wireless communications devices including generating a lower layer cipher key from a lower layer access key stored on the wireless communications device, for example, on a smart card, and then generating a higher layer authentication key (210) from the lower layer cipher key (230). The higher layer authentication key is also generated at a network entity and delivered to an authentication and authorization server. An application server authenticates subscriber device service requests with the authentication and authorization server using the higher layer authentication key.

Abstract: A system (100) for authentication in a wireless local area network (WLAN) includes a CDMA2000 authentication center (190) for authenticating CDMA2000 credentials (110), a WLAN authentication server (150) for using the CDMA2000 credentials to authenticate WLAN devices holding CDMA2000 credentials, and at least one WLAN device (130) holding CDMA2000 credentials. The WLAN server (150) performs a CDMA2000 global challenge and response (213) and a CDMA2000 unique challenge and response (223) with a WLAN device to obtain a CDMA2000 encryption key (233). The WLAN server (150) derives a master key from the CDMA2000 encryption key (234) and uses the master key to perform a WLAN challenge and response (237) with the WLAN device (130) and then derives session keys from the master key (240). The session keys protect communications between the WLAN access point (140) and the WLAN device (130).

Abstract: The present invention provides a thermoelectric material made from the ZrNiSn-based, half-Heusler structure where Pd is alloyed on the site of Ni, Hf alloyed on Zr, and Sb doped on Sn, all in accordance with the formula Zr0 5Hf0.5Ni1-xPdxSn0.99Sb0 01. The structure significantly increases the value of the figure of merit (ZT) by decreasing the structure's thermal conductivity, without significant increases to its Seebeck coefficient.

Abstract: A method of authentication between servers in a three party network protocol network includes first providing at least one network access server (NAS) in communication with at least one user of the network and also in communication with at least one remote authentication server (RAS) coupled to the network. An access request message including a user password is sent from the user to the NAS. The NAS encrypts the password with a shared secret between the NAS and the RAS. The NAS subsequently tags a message authentication code (MAC) using the shared secret to the encrypted password. The encrypted password and MAC are then sent to the RAS. The RAS first authenticates the NAS by verifying the MAC before decrypting the encrypted user password.

Abstract: A switch level simulation system includes a netlister, a cross-coupled device detector, a cross-coupled device transformer and a switch level simulator. The user provides a circuit a design to the netlister, which generates a netlist of the circuit. The cross-coupled device detector searches the netlist to find all of the cross-coupled devices in the circuit design. The cross-coupled device detector also determines whether the cross-coupled device has a “rail” node directly connected an external voltage source line. The cross-coupled device transformer transforms each cross-coupled device having a rail node into a transformed cross-coupled device by inserting in the netlist a device at the rail node mirroring the enable device. The mirror device allows the transformed cross-coupled device to provide a high impedance state to emulate the meta-stable state of the cross-coupled device during switch level simulation.

Abstract: This invention describes a column redundancy arrangement in a DRAM that minimizes the timing difference between a normal and a redundant column path. A semiconductor memory device comprises memory elements arranged in rows and columns. The memory elements are accessed by energizing one or more rows and columns. A first and a second group of normal column drivers are provided for energizing associated normal memory columns in response to respective ones of column select signals. Further, a first and second redundant column driver are provided for energizing associated redundant memory columns upon receipt of a column select signal along a redundancy select line. A plurality of programmable switches are associated with the normal column drivers, for selectively steering respective ones of the column select signals to associated column drivers or the first or second of the redundant column drivers.

Abstract: The invention relates to word line drivers found in embedded dynamic random access memories (DRAM) of application specific integrated circuits (ASICs). The invention is a method of programming the time at which the boosted voltage interval begins, and the period during which the boosted voltage is maintained. The result is the ability to apply the boosted voltage only when needed, thus minimizing the danger to the oxide integrity. The method comprises initiating an active row cycle in response to a leading edge of a row activation signal, initiating a precharge cycle in response to a trailing edge of the row activation signal, the precharge cycle comprising a broad line boost interval initiated by the falling edge of the row activation signal and having a predetermined duration controlled by a programmable delay circuit.

Abstract: This invention describes a column redundancy method and apparatus in a DRAM that minimizes the timing difference between a normal and redundant column paths and which minimizes the number of fuses required in repairing faulty columns. The invention discloses a DRAM having memory elements arranged in rows and columns, the memory elements being accessible by decoding a memory address applied thereto, normal column drivers for energizing appropriate memory columns in response to the decoder memory addresses received at an input thereof; redundant column drivers; and switch means for steering the decoded memory address onto one of either normal or redundant column driver paths. The invention further illustrates a fusing system which minimizes the capacitance of redundant select lines, thereby removing unnecessary delay in the redundant column path.

Abstract: A method of driving a DRAM word line comprising initiating a word line active cycle from a leading edge of a row enable signal, applying a first voltage to a word line following and as a result of said leading edge, receiving a trailing edge of the enable signal and applying a boosted voltage to the word line following and as a result of the trailing edge.

Abstract: A method of driving a DRAM word line comprising initiating a word line active cycle from a leading edge of a row enable signal, applying a first voltage to a word line following and as a result of said leading edge, receiving a trailing edge of the enable signal and applying a boosted voltage to the word line following and as a result of the trailing edge.

Abstract: A public key sterilization scheme for thwarting possible attacks based on choosing malicious public keys. A first user sends public key information to a certificate authority. The certificate authority manipulates the public key information, and sends certified version of the public key information to the first user. The first user verifies the certified key, and calculates a second private key.