Patents by Inventor Lien-Yao TSAI

Lien-Yao TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190002275
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The MEMS device structure includes a micro-electro-mechanical system (MEMS) substrate, and a substrate formed over the MEMS substrate. The substrate includes a semiconductor via through the substrate. The MEMS device structure includes a dielectric layer formed over the substrate and a polymer layer formed on the dielectric layer. The MEMS device structure also includes a conductive layer formed in the dielectric layer and the polymer layer. The conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer.
    Type: Application
    Filed: February 14, 2018
    Publication date: January 3, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Len-Yi LEU
  • Patent number: 10155660
    Abstract: A device includes a complementary metal-oxide-semiconductor (CMOS) wafer and a conductive shielding layer. The CMOS wafer includes a semiconductor substrate, at least one front-end-of-the-line (FEOL) element, at least one back-end-of-the-line (BEOL) element and at least one dielectric layer. The FEOL element is disposed on the semiconductor substrate, the dielectric layer is disposed on the semiconductor substrate, and the BEOL element is disposed on the dielectric layer. The conductive shielding layer is disposed on the dielectric layer, in which the conductive shielding layer is electrically connected to the semiconductor substrate.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ping Chun Yeh, Lien-Yao Tsai, Shao-Chi Yu
  • Patent number: 10150664
    Abstract: A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged over the device opening. A stopper is integrated with the second substrate and protrudes from the deflectable element over the device opening. A method for manufacturing the MEMS structure is also provided.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: December 11, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
  • Patent number: 10112822
    Abstract: A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: October 30, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
  • Publication number: 20180230001
    Abstract: A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.
    Type: Application
    Filed: February 16, 2017
    Publication date: August 16, 2018
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
  • Publication number: 20180194618
    Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.
    Type: Application
    Filed: March 2, 2018
    Publication date: July 12, 2018
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Patent number: 9926190
    Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: March 27, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Patent number: 9868630
    Abstract: A package structure includes a device chip, a MEMS die, a cap structure, and an eutectic bonding layer. The MEMS die is over the device chip and includes a substrate having a plurality of cavities and a conductive layer covering a bottom surface and sidewalls of each of the cavities. The cap structure is coupled to the MEMS die, and the cap structure includes a base substrate having at least one seal ring located in the cavities and a bonding layer covering a first surface and at least part of sidewalls of the seal ring. The first surface of the seal ring faces the MEMS die. The eutectic bonding layer is located between the conductive layer and the bonding layer in the cavities. In addition, a method of manufacturing the package structure is provided.
    Type: Grant
    Filed: August 16, 2016
    Date of Patent: January 16, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Publication number: 20180002166
    Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. The MEMS device includes a first substrate including a first conductive feature, a first movable element positioned over the first conductive feature, a second conductive feature, and a second movable element positioned over the second conductive feature. The MEMS device also includes a cap bonded to the first substrate, where the cap and the first substrate define a first sealed cavity and a second sealed cavity. The first conductive feature and the first movable element are disposed in the first sealed cavity and the second conductive feature and the second movable element are disposed in the second sealed cavity. A pressure of the second cavity is higher than a pressure of the first sealed cavity, and an out gas layer is disposed in a recess of the cap that partially defines the second sealed cavity.
    Type: Application
    Filed: September 18, 2017
    Publication date: January 4, 2018
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Publication number: 20170334711
    Abstract: A package structure includes a device chip, a MEMS die, a cap structure, and an eutectic bonding layer. The MEMS die is over the device chip and includes a substrate having a plurality of cavities and a conductive layer covering a bottom surface and sidewalls of each of the cavities. The cap structure is coupled to the MEMS die, and the cap structure includes a base substrate having at least one seal ring located in the cavities and a bonding layer covering a first surface and at least part of sidewalls of the seal ring. The first surface of the seal ring faces the MEMS die. The eutectic bonding layer is located between the conductive layer and the bonding layer in the cavities. In addition, a method of manufacturing the package structure is provided.
    Type: Application
    Filed: August 16, 2016
    Publication date: November 23, 2017
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Patent number: 9764948
    Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. An outgas layer is deposited on a surface of a cap wafer. The cap wafer is bonded to a substrate in a manner that forms a first sealed cavity including a first movable element and a second sealed cavity including a second movable element. The out gas layer is annealed to release gas from the out gas layer into the second sealed cavity and increase a pressure of the second sealed cavity so that the second sealed cavity has a higher pressure than the first sealed cavity after the annealing.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: September 19, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Publication number: 20170210619
    Abstract: Micro-electromechanical (MEMS) devices and methods of forming are provided. An outgas layer is deposited on a surface of a cap wafer. The cap wafer is bonded to a substrate in a manner that forms a first sealed cavity including a first movable element and a second sealed cavity including a second movable element. The out gas layer is annealed to release gas from the out gas layer into the second sealed cavity and increase a pressure of the second sealed cavity so that the second sealed cavity has a higher pressure than the first sealed cavity after the annealing.
    Type: Application
    Filed: January 21, 2016
    Publication date: July 27, 2017
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Publication number: 20170210618
    Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.
    Type: Application
    Filed: January 21, 2016
    Publication date: July 27, 2017
    Inventors: Kai-Fung Chang, Len-Yi Leu, Lien-Yao Tsai
  • Patent number: 9540231
    Abstract: Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: January 10, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
  • Publication number: 20160214855
    Abstract: A device includes a complementary metal-oxide-semiconductor (CMOS) wafer and a conductive shielding layer. The CMOS wafer includes a semiconductor substrate, at least one front-end-of-the-line (FEOL) element, at least one back-end-of-the-line (BEOL) element and at least one dielectric layer. The FEOL element is disposed on the semiconductor substrate, the dielectric layer is disposed on the semiconductor substrate, and the BEOL element is disposed on the dielectric layer. The conductive shielding layer is disposed on the dielectric layer, in which the conductive shielding layer is electrically connected to the semiconductor substrate.
    Type: Application
    Filed: January 28, 2015
    Publication date: July 28, 2016
    Inventors: Ping Chun YEH, Lien-Yao TSAI, Shao-Chi YU
  • Publication number: 20160167945
    Abstract: A microelectromechanical systems (MEMS) structure having a stopper integrated with a MEMS substrate is provided. A first substrate has a dielectric layer arranged over the first substrate. The dielectric layer includes a device opening. A second substrate is arranged over and bonded to the first substrate through the dielectric layer. The second substrate includes a deflectable element arranged over the device opening. A stopper is integrated with the second substrate and protrudes from the deflectable element over the device opening. A method for manufacturing the MEMS structure is also provided.
    Type: Application
    Filed: December 15, 2014
    Publication date: June 16, 2016
    Inventors: Kai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
  • Publication number: 20150210537
    Abstract: Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.
    Type: Application
    Filed: January 28, 2014
    Publication date: July 30, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Kai-Fung CHANG, Lien-Yao TSAI, Len-Yi LEU