Abstract: A semiconductor device including a circuit substrate, a chip package, and a stiffener ring is provided. The chip package is disposed on and electrically connected to the circuit substrate, the chip package includes a pair of first parallel sides and a pair of second parallel sides shorter than the pair of first parallel sides. The stiffener ring is disposed on the circuit substrate, the stiffener ring includes first stiffener portions extending along a direction substantially parallel with the pair of first parallel sides and second stiffener portions extending along the direction substantially parallel with the pair of second parallel sides. The first stiffener portions are connected to the second stiffener portions, and the second stiffener portions is mechanically weaker than the first stiffener portions. A semiconductor device including stiffener lids is also provided.

Abstract: A semiconductor device and method of manufacture are provided wherein semiconductor devices are attached over a semiconductor substrate. A seal ring within the semiconductor device is extended to include a first bond metal within a bonding layer and bonded to a second bond metal over the semiconductor substrate. Such a seal ring provided a more complete protection from cracking and delamination.

Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.

Abstract: A semiconductor device including a circuit substrate, a chip package, and a stiffener ring is provided. The chip package is disposed on and electrically connected to the circuit substrate, the chip package includes a pair of first parallel sides and a pair of second parallel sides shorter than the pair of first parallel sides. The stiffener ring is disposed on the circuit substrate, the stiffener ring includes first stiffener portions extending along a direction substantially parallel with the pair of first parallel sides and second stiffener portions extending along the direction substantially parallel with the pair of second parallel sides. The first stiffener portions are connected to the second stiffener portions, and the second stiffener portions is mechanically weaker than the first stiffener portions. A semiconductor device including stiffener lids is also provided.

Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.

Abstract: A method includes etching a portion of a wafer to form a first trench in a scribe line of the wafer, wherein the scribe line is between a first device die and a second device die of the wafer. After the etching, a top surface of the portion of wafer in the scribe line is underlying and exposed to the first trench, and the first trench is between opposing sidewalls of the wafer. A laser grooving process is then performed to form a second trench extending from the top surface further down into the wafer, and the second trench is laterally between the opposing sidewalls of the wafer. A die-saw process is then performed to saw the wafer. The die-saw process is performed from a bottom of the second trench, and the die-saw process results in the first device die to be separated from the second device die.

Abstract: In an embodiment, a package includes an integrated circuit die comprising a first insulating bonding layer and a first semiconductor substrate and an interposer comprising a second insulating bonding layer, a first seal ring, and a second semiconductor substrate. The second insulating bonding layer is directly bonded to the first insulating bonding layer with dielectric-to-dielectric bonds, and wherein the integrated circuit die overlaps the first seal ring. A sidewall of the integrated circuit die is exposed at an outer sidewall of the package.

Abstract: In an embodiment, a package include an integrated circuit die comprising a first insulating bonding layer and a first semiconductor substrate and an interposer comprising a second insulating bonding layer and a second semiconductor substrate. The second insulating bonding layer is directly bonded to the first insulating bonding layer with dielectric-to-dielectric bonds. The package further includes an encapsulant over the interposer and surrounding the integrated circuit die. The encapsulant is further disposed between the first insulating bonding layer and the second insulating bonding layer along a line perpendicular to a major surface of the first semiconductor substrate.

Abstract: A method includes bonding a composite die on a redistribution structure. The composite die comprises a device die including a semiconductor substrate, a through-semiconductor via penetrating through the semiconductor substrate, a metal via at a surface of the device die, and a sacrificial carrier attached to the device die. The composite die is encapsulated in an encapsulant. A planarization process is performed on the composite die and the encapsulant, and the sacrificial carrier is removed to reveal the metal via. A conductive feature is formed to electrically couple to the metal via.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Abstract: Manufacturing flexibility and efficiency are obtained with a method, and resulting structure, in which RDL contact features can be formed and aligned to through silicon vias (TSV's) regardless of any potential mismatch in the respective critical dimensions (CD's) between the manufacturing process for forming the TSV's and the manufacturing process for forming the contact features. Various processes for a self-aligned exposure of the underlying TSV's, without the need for additional photolithography steps are provided.

Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Abstract: A method of forming an integrated circuit package includes following operations. A padding layer is formed on a portion of a carrier. A first semiconductor die is placed on the padding layer and a second semiconductor die is placed on the carrier. The first semiconductor die and the second semiconductor die are encapsulated with a first encapsulation layer. A first redistribution layer structure is formed over the first semiconductor die, the second semiconductor die and the first encapsulation layer. A third semiconductor die is placed on the first redistribution layer structure. The third semiconductor die is encapsulated with a second encapsulation layer. A second redistribution layer structure is formed over the third semiconductor die and the second encapsulation layer. The carrier is debonded. The padding layer is removed, and therefore, a recess is formed in the first encapsulation layer.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.