Patents by Inventor Lily Zheng

Lily Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of a silicon structure and deep silicon etch with profile control
    Patent number: 9865472
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: January 9, 2018
    Assignee: Lam Research Corporation
    Inventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin Moore, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
  • FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL
    Publication number: 20160233102
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Application
    Filed: April 20, 2016
    Publication date: August 11, 2016
    Inventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MOORE, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
  • Fabrication of a silicon structure and deep silicon etch with profile control
    Patent number: 9330926
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: May 3, 2016
    Assignee: Lam Research Corporation
    Inventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin McDonnell, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
  • FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL
    Publication number: 20090184089
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Application
    Filed: December 18, 2008
    Publication date: July 23, 2009
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MCDONNELL, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
  • Method for providing uniform removal of organic material
    Patent number: 7534363
    Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.
    Type: Grant
    Filed: June 25, 2004
    Date of Patent: May 19, 2009
    Assignee: Lam Research Corporation
    Inventors: Rao V. Annapragada, Odette Turmel, Kenji Takeshita, Lily Zheng, Thomas S. Choi, David R. Pirkle
  • Method for providing uniform removal of organic material
    Publication number: 20050006346
    Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.
    Type: Application
    Filed: June 25, 2004
    Publication date: January 13, 2005
    Inventors: Rao Annapragada, Odette Turmel, Kenji Takeshita, Lily Zheng, Thomas Choi, David Pirkle
  • Measuring spacing between two surfaces via evanescent coupling
    Patent number: 6462349
    Abstract: A near-field optical system having a mechanism to determine a spacing between an optical surface and a reflective surface that are spaced by less one wavelength by using coupled radiation energy that has an evanescently-coupled portion.
    Type: Grant
    Filed: September 28, 1999
    Date of Patent: October 8, 2002
    Assignee: Terastor Corporation
    Inventors: Yung-Chieh Hsieh, Lily Zheng, Roger Hajjar, Sanjai Parthasarathi