Abstract: In some examples, a material may be subject to shot peening of a relatively long duration to improve cavitation erosion resistance of the material. For example, the material surface may be shot peened to cause grain reduction and an increase in hardness to a depth of 60 ?m or more, while the surface remains relatively smooth. As one example, the method may include treating a surface of austenitic stainless steel by impacting the surface with shot media for a treatment duration of 15 to 40 minutes at a shot peening intensity corresponding to an Almen strip type A intensity of 5A to 10A.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A process for designing and manufacturing a cavitation erosion resistant component. The process includes selecting a base material for use in a cavitation erosion susceptible environment and conducting a uniaxial loading test on a sample of the selected material. Thereafter, atomic force microscopy (AFM) topography on a surface of the tested sample is conducted and used to provide a surface strain analysis. The process also includes crystal plasticity finite element modeling (CPFEM) of uniaxial loading and CPFEM nanoindentation of the selected material over a range of values for at least one microstructure parameter. A subrange of microstructure parameter values that correlate to CPFEM nanoindentation results that provide increased CE resistance is determined. Finally, a component having an average microstructure parameter value that falls within the subrange of microstructure parameter values is manufactured.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.

Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.

Abstract: A near-field optical system having a mechanism to determine a spacing between an optical surface and a reflective surface that are spaced by less one wavelength by using coupled radiation energy that has an evanescently-coupled portion.