Abstract: Disclosed is a method of synthesizing a (1R,2R)-nitroalcohol compound of formula (I), as shown in the following reaction scheme, including: subjecting a compound of formula (II) and a compound of formula (III) to a condensation reaction in an organic solvent in the presence of a copper complex generated in situ from a chiral (1S,2R)-amino alcohol ligand and a cupric salt to produce the (1R,2R)-nitroalcohol compound of formula (I), where R1 and R2 are defined in the same manner as that in the specification. The method involves mild reaction conditions, excellent diastereoselectivity and high chemical yield, and thus it is suitable for industrial applications.

Abstract: Disclosed herein is a method of synthesizing a (1S,12bS) lactam ester compound, including: subjecting a dihydrocarboline diester compound of formula (II) to asymmetric hydrogenation and lactamization in an organic solvent in the presence of an iridium catalyst precursor, a chiral diphosphine ligand and a halogen-containing reagent under hydrogen atmosphere to produce the (1S,12bS) lactam ester compound of formula (I), as shown in the following reaction scheme, where R1, R2 and R3 are defined in the same manner with the specification.

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

Abstract: Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.

Abstract: A method, system, and computer program product for hyper-parameter determination. In a method, a network architecture of a learning model may be determined, and the learning model may be configured for performing a computing task based on machine learning. A metric value record associated with a group of hyper-parameters may be obtained during hyper-parameter determination for the learning model. An estimation of a metric value may be obtained based on the network architecture, and the metric value record and an association relationship representing an association between network architectures and metric values for the network architectures. The group of hyper-parameters may be selected in response to the estimation of the metric value meeting a predefined criterion. With these embodiments, a group of hyper-parameters may be selected, and further the learning model may be trained based on the selected group of hyper-parameters.

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

Abstract: A simulation device for integrated evaluation experiment for sand control wellbore plugging and plugging removal, including a wellbore system, a whole sand control well plugging system, a local sand control well plugging system and a plugging removal system. The wellbore system simulates downhole working conditions of the sand control wellbore. Perforations of the whole sand control well plugging system and sand-filled pipe of the local sand control well plugging system are applied on the casing pipe of the wellbore system. The plugging process of the sand control well system is simulated by pumping a sand-laden slurry into the wellbore system. The plugging removal process is simulated by setting the plugging removal tool of plugging removal system through an oil tube in the wellbore system. The plugging removal effect of the plugging removal tool is analyzed and evaluated according to the reliable data measured by the pressure gauge, flowmeter, etc.

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Abstract: Provided is a method and system for normalizing catalog item data to create higher quality search results. In one example, the method may include receiving a record comprising an unstructured description of an object, identifying a type of the object from among a plurality of object types and identifying a predefined attribute of the identified type of object, extracting a value from the unstructured description corresponding to the predefined attribute and modifying the extracted value to generate a normalized attribute value, and storing a structured record of the object in a structured format comprising a plurality of values of a plurality of attributes of the object from the unstructured description including the normalized attribute value for the predefined attribute of the object.

Abstract: The invention relates to a device and a method to assist with the operation of an instrument by means of said device, the device and the method using leverage effects in order to calculate the data relative to any point of an instrument axis, instead of using low-accuracy sensors. Other improvements are also described that allow higher-quality usage performance for the operator, which reduces the risk of errors and simplifies the operations.

Abstract: A simulation device for integrated evaluation experiment for sand control wellbore plugging and plugging removal, including a wellbore system, a whole sand control well plugging system, a local sand control well plugging system and a plugging removal system. The wellbore system simulates downhole working conditions of the sand control wellbore. Perforations of the whole sand control well plugging system and sand-filled pipe of the local sand control well plugging system are applied on the casing pipe of the wellbore system. The plugging process of the sand control well system is simulated by pumping a sand-laden slurry into the wellbore system. The plugging removal process is simulated by setting the plugging removal tool of plugging removal system through an oil tube in the wellbore system. The plugging removal effect of the plugging removal tool is analyzed and evaluated according to the reliable data measured by the pressure gauge, flowmeter, etc.

Abstract: A piezoelectric energy harvester has a layered structure comprising a first electrode, a polymeric piezoelectric material, and a second electrode, the layered structure coupled to receive mechanical stress from the environment, and the first and second electrode electrically coupled to a power converter. The power converter is adapted to charge an energy storage device selected from a capacitor and a battery. The method of harvesting energy from the environment includes providing a piezoelectric device comprising a layer of a polymeric piezoelectric material disposed between a first and a second electrode; coupling mechanical stress derived from an environment to the piezoelectric device; and coupling electrical energy from the piezoelectric device.

Abstract: Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation of an atomic layer deposition (ALD) control layer as a diffusion barrier or gate dielectric layer and subsequent ALD processing. Embodiments described herein are believed to be advantageously utilized concerning gate oxide deposition, diffusion barrier deposition, surface functionalization, surface passivation, and oxide nucleation, among other processes. More specifically, embodiments described herein provide for silicon nitride ALD processes which functionalize, passivate, and nucleate a SiNx monolayer at temperatures below about 300° C.

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Abstract: The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.