Abstract: The disclosure provides a compressing structure for compressing a component, a power module and a method for compressing a component inside a chamber, the compressing structure is provided for compressing a component onto a fixed plate and comprises a plate-shaped structure, the component is secured to a first side of the plate-shaped structure, the outside of the plate-shaped structure is provided with a base; at least a steering compressing member is provided between a second side of the plate-shaped structure and the base, and mounted on the second side of the plate-shaped structure or the base, the steering compressing member is provided for transforming an rotational motion into a translational motion; and at least a positioning device mounted on the side of the plate-shaped structure and the base. The compressing structure provided by the disclosure compresses the component onto the fixed plate.

Abstract: The present application provides a power module, including a first side plate, a second side plate, and an insulating board. The insulating board includes a flat plate portion, at least one protrusion portion, and at least one connecting bridge, the flat plate portion is parallel to a plane formed by a first direction and a second direction; at least one of the protrusion portion and the connecting bridge protrudes along a third direction to form an insulation cavity; the insulating board, the first side plate, and the second side plate in combination form a first accommodating space and a second accommodating space along the third direction, the first accommodating space is provided with a first power device, and the second accommodating space is provided with a second power device; and a transformer, including a magnetic core and a winding wound on the magnetic core.

Abstract: An apparatus includes a compressor, a first heat exchanger, a reheater, a first valve, a second heat exchanger, a four-way valve, a cap tube, and a blower. The compressor compresses a refrigerant. The blower moves air proximate the second heat exchanger to the reheater. During a cooling mode of operation, the four-way valve is configured to direct refrigerant from the first heat exchanger to the compressor; the compressor compresses the refrigerant received from the first heat exchanger; and the cap tube is configured to allow refrigerant to bypass the reheater.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: An interconnection structure and methods of forming the same are described. The interconnection structure includes a dielectric layer, a dielectric material disposed over the dielectric layer, and first and second conductive features disposed in the dielectric material. The first and second conductive features each has rounded top corners, the first conductive feature has a first width and a first height, and the second conductive feature has a second width substantially less than the first width and a second height substantially the same as the first height. The structure further includes an etch stop layer disposed on the first and second conductive features and third and fourth conductive features disposed in the dielectric material and the etch stop layer. The third conductive feature is in contact with the first conductive feature, and the fourth conductive feature is in contact with the second conductive feature.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A method of forming a semiconductor structure includes forming a seed layer on a substrate, forming a photoresist layer on the seed layer with a first opening wider than a second opening, performing an electroplating process with a first plating current to grow a bottom portion of a first metal line in the first opening and a bottom portion of a second metal line in the second opening, continuing the electroplating process with a second plating current that is larger than the first plating current to grow a top portion of the first metal line and a top portion of the second metal line, removing the photoresist layer to expose a portion of the seed layer, and removing the exposed portion of the seed layer.

Abstract: The present application discloses a power module, including: at least one transformer, each transformer including a primary side magnetic core and a secondary side magnetic core; a primary side power element, the primary side magnetic core and the primary side power element forming a primary side conversion unit; a secondary side power element, the secondary side magnetic core and the secondary side power element forming a secondary side conversion unit; and an insulating plate, disposed between the primary side conversion unit and the secondary side conversion unit, and including a first area, the first area being adaptively disposed between the primary side magnetic core and the secondary side magnetic core, and the first area having at least one buckling part and/or at least one bending part.

Abstract: An apparatus includes a compressor, a first heat exchanger, a reheater, a first valve, a second heat exchanger, a four-way valve, a cap tube, and a blower. The compressor compresses a refrigerant. The blower moves air proximate the second heat exchanger to the reheater. During a cooling mode of operation, the four-way valve is configured to direct refrigerant from the first heat exchanger to the compressor; the compressor compresses the refrigerant received from the first heat exchanger; and the cap tube is configured to allow refrigerant to bypass the reheater.

Abstract: The present disclosure discloses a shielded insulating shell and an electronic device. The shielded insulating shell includes a shell body provided with a first cavity, with an inner shielding layer near the first cavity and an outer shielding layer far away from the first cavity being formed on the shell body; a first structure formed on the first cavity, and formed by assembling to comprise at least a first shielding layer, a first insulating layer, a first air gap layer, a second insulating layer, and a second shielding layer arranged sequentially from an inner side to an outer side of the first cavity; and an assembling gap formed on the first structure, which cooperates with the first air gap layer to form a creepage path on the first structure that extends from the inner shielding layer to the outer shielding layer.

Abstract: A device includes a molding compound, a plurality of through vias, a seal ring structure, and a protection layer. The plurality of through vias are embedded in the molding compound. The seal ring structure is over the molding compound and surrounds the through vias in a top view. The protection layer covers the seal ring and extends toward the molding compound in a cross-sectional view.

Abstract: An apparatus includes a compressor, a first heat exchanger, a reheater, a first valve, a second heat exchanger, a four-way valve, a cap tube, and a blower. The compressor compresses a refrigerant. The blower moves air proximate the second heat exchanger to the reheater. During a heating mode of operation, the four-way valve is configured to direct refrigerant from the compressor to the second heat exchanger; the second heat exchanger is configured to use the refrigerant from the compressor to heat air proximate the second heat exchanger; and the cap tube is configured to allow refrigerant to bypass the reheater.

Abstract: A device includes a semiconductor chip, a molding compound, an insulating structure, an under-bump-metallurgy (UBM), a conductive ball, and a protection layer. The molding compound laterally surrounds the semiconductor chip. The insulating structure is over the semiconductor chip and the molding compound. The UBM is over the insulating structure and is electrically connected to the semiconductor chip. The conductive ball is in contact with the UBM. The protection layer extends from the UBM to the molding compound.

Abstract: The disclosure provides a compressing structure for compressing a component, a power module and a method for compressing a component inside a chamber, the compressing structure is provided for compressing a component onto a fixed plate and comprises a plate-shaped structure, the component is secured to a first side of the plate-shaped structure, the outside of the plate-shaped structure is provided with a base; at least a steering compressing member is provided between a second side of the plate-shaped structure and the base, and mounted on the second side of the plate-shaped structure or the base, the steering compressing member is provided for transforming an rotational motion into a translational motion; and at least a positioning device mounted on the side of the plate-shaped structure and the base. The compressing structure provided by the disclosure compresses the component onto the fixed plate.

Abstract: A transformer includes an insulation member, a high voltage part, and a low voltage part, the insulation member includes a first insulator, a second insulator, and a reference plane, the high voltage part is disposed on a first side of the reference plane, the low voltage part is disposed on a second side of the reference plane, the first insulator is disposed on the reference plane, at least a portion of the second insulator is located around the high voltage part, at least one air passage is formed by the insulation member, and at least a portion of the air passage is located within a height of the high voltage part in a normal direction of the reference plane.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: The invention discloses a power module and a power conversion device. The power module includes a primary converting unit including a first active device unit; a secondary converting unit including a second active device unit; a transformer including a primary unit connected to the primary converting unit and a secondary unit connected to the secondary converting unit; a first heat dissipating unit on which the primary unit and the first active device unit are disposed; a second heat dissipating unit on which the secondary unit and the second active device unit are disposed; and an insulating plate including an insulating plate body and a semi-conducting layer disposed on a surface of the insulating plate body.

Abstract: A wellbore staged operation method, includes running, after a first well drifting operation is performed on a wellbore, a pipe string (100) in the wellbore, wherein the pipe string (100) includes, along a direction from bottom to top, a floating hoop (2), a plug seat (7), a toe-end sliding sleeve (3), and a fracturing sliding sleeve (4); performing a cementing operation, wherein cement slurry pumped into an inner chamber of the pipe string (100) enters an annulus between the pipe string and the wellbore through the plug seat (7) and the floating hoop (2) to form a cement sheath, the cement sheath isolating the toe-end sliding sleeve (3) from the fracturing sliding sleeve (4); performing a second drifting operation to ensure the toe-end sliding sleeve (3) of the pipe string (100) exposed; performing a pressure test for the pipe string; and performing staged fracturing constructions.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: The present disclosure relates to the field of power electronics, and proposes a power conversion system, including a power cabinet, a first divider and a plurality of power modules. The power cabinet includes a first high voltage compartment and a first low voltage compartment. The first divider is arranged in the power cabinet, and extends along a height direction of the power cabinet to separate the first high voltage compartment and the first low voltage compartment. The plurality of power modules are arranged in the power cabinet, each power module includes a high voltage input terminal and a low voltage output terminal; the high voltage input terminal is arranged in the first high voltage compartment, and the low voltage output terminal is arranged in the first low voltage compartment.