Abstract: An HEMT includes a first III-V compound layer, a second III-V compound layer, and a III-V compound cap layer. The second III-V compound layer is disposed on the first III-V compound layer. The III-V compound cap layer covers and contacts the second III-V compound layer. The composition of the III-V compound cap layer and the second III-V compound layer are different from each other. A first opening is disposed in the III-V compound cap layer. A first insulating layer includes two first insulating parts and two second insulating parts. The two first insulating parts cover a top surface of the III-V compound cap layer, and the two second insulating parts respectively contact two sidewalls of the first opening. A second opening is disposed between the two first insulating parts and between the two second insulating parts. A gate electrode is disposed in the second opening.

Abstract: A stylus used to interact with a plurality of positioning transmission electrodes includes a receiver and a demodulation circuit. The receiver receives an uplink signal carrying a plurality of positioning signals which are transmitted from the plurality of positioning transmission electrodes. The demodulation circuit, coupled to the receiver, demodulates the uplink signal to generate at least one positioning signal among the plurality of positioning signals.

Abstract: A high electron mobility transistor (HEMT) device and a method of forming the HEMT device are provided. The HEMT device includes a substrate, a channel layer, a barrier layer, and a gate structure. The substrate has at least one active region. The channel layer is disposed on the at least one active region. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The gate structure includes a metal layer and a P-type group III-V semiconductor layer vertically disposed between the metal layer and the barrier layer. The P-type group III-V semiconductor layer includes a lower portion and an upper portion on the lower portion, and the upper portion has a top area greater than a top area of the lower portion.

Abstract: The present disclosure relates to an antibody against Aquaporin-4 (AQP4). These peptide-specific AQP4 antibodies play a role to create a NMO model and contribute for investigating the NMO disease mechanisms and developing the strategy of the treatment.

Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

Abstract: A method of providing information on a social networking service (SNS) activity to a chatroom, performed by a user terminal, includes: transmitting, to a server, an SNS request for each of a plurality of anonymous profiles created to be interlinked with an account of a user for an instant messaging service (IMS); displaying information on an SNS activity performed through a first anonymous profile selected by the user in correspondence with a chatroom in which the user participates in the IMS, from among the plurality of anonymous profiles, in the chatroom; receiving an input of changing a profile of the user, selected corresponding to the to chatroom, from the first anonymous profile to a second anonymous profile; and displaying information on an SNS activity performed through the second anonymous profile in the chatroom.

Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.

Abstract: The present disclosure relates to a tooth brightening composition comprising polyurethane, at least one white food colours and at least one blue food colours and optionally other orally acceptable carriers and/or excipients. The present disclosure also provides a tooth brightening kit and a tooth brightening method with the tooth brightening composition.

Abstract: Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).

Abstract: A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channel layer. The buffer layer is located between the substrate and the channel layer. The plurality of amorphous regions are located in the buffer layer below the source and the drain.

Abstract: A disclosed touchless provisioning method configures a baseboard management controller (BMC) of a bare metal server to include or support two or more network services for retrieving a configuration profile locator (CPL) identifying a network-accessible configuration file containing a server configuration profile (SCP). At least one of the network services may be invoked to retrieve the CPL and pass the CPL to a provisioning agent process configured to access the configuration file and configure the system in accordance with the SCP. The server may require a static IP address and the two or more network services may include at least one network service, such as a multicast domain name service (mDNS), suitable for use in conjunction with a static IP address system and at least one network service, such as a DHCP service, suitable for use in conjunction with servers that do not require a static IP address.

Abstract: A template for assigning the most probable root causes for wafer defects. The bin map data for a subject wafer can be compared with bin map data for prior wafers to find wafers with similar issues. A probability can be determined as to whether the same root cause should be applied to the subject wafer, and if so, the wafer can be labeled with that root cause accordingly.

Abstract: An information handling system may include a management controller and information handling resources that are coupled to the management controller via a first communication channel and a second communication channel, each information handling resource having a first communication channel identifier, and each information handling resource having a second communication channel identifier. The management controller may query the information handling resources via the first communication channel to determine a first set of unique identifiers for the information handling resources; query the information handling resources via the second communication channel to determine a second set of unique identifiers for the information handling resources; and based on a comparison between the first set of unique identifiers and the second set of unique identifiers, create a mapping that correlates the first communication channel identifiers with the second communication channel identifiers.

Abstract: The present disclosure relates to a tooth anti-staining composition comprising polyurethane and dicalcium phosphate and optionally other orally acceptable carriers and/or excipients. The present disclosure also provides a tooth anti-staining kit and a tooth anti-staining method with the tooth anti-staining composition.

Abstract: A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.

Abstract: An apparatus, a processing circuitry and a method for measuring a distance to an object are provided. The apparatus comprising a light source, a direct time of flight (DTOF) sensor array configured to receive a reflected signal from the object, a processing circuitry coupled to the DTOF sensor array and comprising a first time to digital converter (TDC) and a second TDC, respectively disposed on opposite sides of the DTOF sensor array, the processing circuitry configured to receive, by the first TDC, a first photon detection signal transmitted by a first pixel, receive, by the second TDC, a second photon detection signal transmitted by the first pixel, and calculate a first distance from the first pixel to the object according to a first arrival time of the first photon detection signal detected by the first TDC and a second arrival time of the second signal detected by the second TDC.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.

Abstract: An information handling system may include a management controller and information handling resources that are coupled to the management controller via a first communication channel and a second communication channel, each information handling resource having a first communication channel identifier, and each information handling resource having a second communication channel identifier. The management controller may query the information handling resources via the first communication channel to determine a first set of unique identifiers for the information handling resources; query the information handling resources via the second communication channel to determine a second set of unique identifiers for the information handling resources; and based on a comparison between the first set of unique identifiers and the second set of unique identifiers, create a mapping that correlates the first communication channel identifiers with the second communication channel identifiers.

Abstract: Provided is an electronic device including a touch panel, a communication unit, and a processing unit coupled to the touch control panel and the communication unit. The communication unit sends a detection signal and receives a response signal based on the detection signal. The processing unit determines an operation mode of the electronic device based on the response signal. The operation mode includes a first mode and a second mode. An input signal source of the electronic device of the first mode includes a finger. The input signal source of the second mode includes the finger and a stylus. When the response signal includes a pen-tip signal of the stylus and a pen-ring signal of the stylus, the processing unit determines whether to set the operation mode to the second mode according to the numerical relationship between the pen-tip signal and the pen-ring signal.