Patents by Inventor Lin Wang

Lin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250148769
    Abstract: Certain aspects provide techniques and apparatuses for efficient operation of a machine learning model based on partitioning the machine learning model. An example method generally includes receiving a graph for a machine learning model. The graph for the machine learning model generally includes a plurality of subgraphs representing different portions of the machine learning model. The machine learning model is instantiated across a plurality of process domains associated with a same application based on the plurality of subgraphs in the graph for the machine learning model. An inference is generated based on executing the machine learning model across the plurality of process domains, and one or more actions are taken based on the generated inference.
    Type: Application
    Filed: November 8, 2023
    Publication date: May 8, 2025
    Inventors: Alexander BEYKUN, Sahil GUPTA, Jian WANG, Prathamesh Prakash PRABHUDESAI, Lin WANG, Nathan William LEE, Veluppillai ARULESAN, Jeffrey Baginsky GEHLHAAR
  • Publication number: 20250145641
    Abstract: Provided are a fused bicyclic derivative, a pharmaceutically acceptable salt, a crystal form thereof and a preparation method therefor. Specifically, provided are a hydrochloride, a mesylate, an acetate and a tartrate of the compound of formula (I), and a preparation method therefor and a crystal form thereof.
    Type: Application
    Filed: September 16, 2022
    Publication date: May 8, 2025
    Inventors: Tingting SHANG, Miaomiao ZHAO, Junran YANG, Zhenxing DU, Lin WANG, Qiyun SHAO, Jun FENG, Feng HE
  • Publication number: 20250137114
    Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.
    Type: Application
    Filed: January 6, 2025
    Publication date: May 1, 2025
    Inventors: Yi-Lin WANG, Chin-Szu LEE, Hua-Sheng CHIU, Yi-Chao CHANG, Zih-Shou MUE
  • Publication number: 20250138637
    Abstract: Disclosed are a wearable device, a signal processing method and a wearable system, the wearable device includes a receiving electrode and a control circuit of the wearable device. The receiving electrode can receive an excitation signal sent by a transmitting wearable device through the skin of the user. The control circuit of the wearable device is used to obtain the present skin impedance of the user through the receiving electrode and adjust the gain of the excitation signal; and when the excitation signal is received, the excitation signal is amplified based on the adjusted gain to determine the present click position of the user.
    Type: Application
    Filed: January 3, 2025
    Publication date: May 1, 2025
    Inventors: Huajie SAN, Lin Wang
  • Publication number: 20250136735
    Abstract: Disclosed are a polymer, a tackifier, a preparation method therefor and a drilling fluid. The polymer contains a structural unit represented by a formula (1), a structural unit represented by a formula (2) and a structural unit represented by a formula (3), wherein R1, R2, R3, R4, R5, R6, R7 and R8 are each independently hydrogen or C1 to C10 linear or branched alkyl; X is C1 to C10 linear or branched alkylene; Y is a formula (4) or C1 to C10 linear or branched alkylene; and M is hydrogen or an alkali metal, and A1, A2 and A3 are each independently a bond or C1 to C3 linear or branched alkylene. The polymer can still maintain excellent viscosity-increasing performance in a high-temperature and high-calcium environment.
    Type: Application
    Filed: July 20, 2022
    Publication date: May 1, 2025
    Inventors: Daqi LI, Yang XUAN, Junbin JIN, Lin WANG, Xiaohua YANG, Sheng LI, Dong ZHANG, Ziqiao HU, Zhoujun LI
  • Patent number: 12289897
    Abstract: A magnetic memory device includes a bottom electrode layer, a magnetic tunneling junction (MTJ) stack disposed on the bottom electrode layer, a dielectric cap layer disposed on the MTJ stack, and a metal cap layer disposed on the dielectric cap layer, wherein the metal cap layer comprises a plurality of first metal layers and second metal layers alternately stacked on the dielectric cap layer.
    Type: Grant
    Filed: February 20, 2022
    Date of Patent: April 29, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Jing-Yin Jhang
  • Patent number: 12290005
    Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.
    Type: Grant
    Filed: May 30, 2024
    Date of Patent: April 29, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Si-Han Tsai, Che-Wei Chang, Jing-Yin Jhang
  • Publication number: 20250132266
    Abstract: A semiconductor package structure and a method of manufacturing the same are provided. The method includes: providing a substrate having a mounting surface and at least one grounding pad; mounting a semiconductor device onto the mounting surface; mounting at least a metal piece onto the mounting surface, wherein the metal piece is electrically connected to the grounding pad; forming a plastic package body, which covers the semiconductor device and the metal piece; forming an electromagnetic shielding layer, which covers the plastic package body and side surfaces of the substrate; exposing a surface of the metal piece; and attaching a grounding body to the surface of the metal piece through soldering. The semiconductor package structure and the method of manufacturing the same achieve high connection strength and high corrosion-resistance between the grounding body in the semiconductor package structure and the grounding pad of the substrate.
    Type: Application
    Filed: October 16, 2024
    Publication date: April 24, 2025
    Applicant: Universal Global Technology(Shanghai)Co.,Ltd.
    Inventors: Yao LI, Wenwen LI, Lin WANG
  • Patent number: 12284812
    Abstract: A semiconductor structure includes a substrate, a first dielectric layer on the substrate, a plurality of memory stack structures on the first dielectric layer, an insulating layer conformally covering the memory stack structures and the first dielectric layer, a second dielectric layer on the insulating layer and filling the spaces between the memory stack structures, a first interconnecting structure through the second dielectric layer, wherein a top surface of the first interconnecting structure is flush with a top surface of the second dielectric layer and higher than top surfaces of the memory stack structures, a third dielectric layer on the second dielectric layer, and a plurality of second interconnecting structures through the third dielectric layer, the second dielectric layer and the insulating layer on the top surfaces of the memory stack structures to contact the top surfaces of the memory stack structures.
    Type: Grant
    Filed: April 16, 2024
    Date of Patent: April 22, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
  • Publication number: 20250123373
    Abstract: A reflection rate correction Time of Flight (ToF) ranging method including: obtaining statistical results of photon flight time of a light pulse reflected by a target object; where the statistical results include detection times of photons and photon quantities corresponding to the detection times; determining a start time of detecting the light pulse based on the statistical results; determining a distance to the target object based on the start time of detecting the light pulse and a start time of emitting the light pulse.
    Type: Application
    Filed: December 21, 2024
    Publication date: April 17, 2025
    Applicants: PolarisIC Microelectronics Co., Ltd.(Wuhan), PolarisIC Microelectronics Co., Ltd.(Shenzhen)
    Inventors: Xi ZHANG, Linyin SONG, Rui ZHANG, Lin WANG
  • Publication number: 20250123835
    Abstract: A computer-implemented method for executing a hot upgrade process is provided. The computer-implemented method includes receiving a process upgrade request during executions of first and second tasks by an old container, determining that the process upgrade request affects the first task but not the second task, labeling the first task but not the second task and acting on the process upgrade request. The computer-implemented method further includes, based on the labeling, storing the first task by the old container and executing the second task by the old container, deleting the old container and instantiating a new container for transformation and execution of the first task.
    Type: Application
    Filed: October 11, 2023
    Publication date: April 17, 2025
    Inventors: Jing Jing Wei, Yue Wang, Yang Kang, Yi Fan Wu, Shu Jun Tang, Jia Lin Wang
  • Publication number: 20250117292
    Abstract: Disclosed in the embodiments of the present application are a data storage method and apparatus, a device, and a non-transitory readable storage medium. According to the embodiments of the present application, F parity blocks occupying blank storage areas are added to a RAID system, which not only increases error tolerance but also eliminates the need for additional parity disks. During data storage, corresponding original check codes are solved according to an original encoding method, and additional check codes located on the parity blocks are solved simultaneously. Thus, it is possible to recover more erroneous data based on the original check codes and the additional check codes. When an error occurs in a disk in which any block in a stripe is located and data loss occurs in other blocks of the same stripe, the corresponding data can still be recovered.
    Type: Application
    Filed: September 29, 2022
    Publication date: April 10, 2025
    Inventors: Ruizhen WU, Yongxing ZHANG, Jingjing CHEN, Xu ZHANG, Lin WANG, Tong LIU
  • Patent number: 12269823
    Abstract: The present disclosure relates to a crystal form of a pyridopyrimidine derivative and a preparation method thereof, and specifically relates to the crystal form of the compound of formula (I) and a preparation method thereof. The new crystal form has good physical and chemical properties, thereby facilitating clinical treatments.
    Type: Grant
    Filed: December 31, 2020
    Date of Patent: April 8, 2025
    Assignees: Jiangsu Hengrui Medicine Co., Ltd., Shanghai Hengrui Pharmaceutical Co., Ltd.
    Inventors: Qi Wu, Zhenxing Du, Jie Wang, Lin Wang, Weidong Lu, Qiyun Shao, Jun Feng, Feng He
  • Patent number: 12274180
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.
    Type: Grant
    Filed: March 17, 2023
    Date of Patent: April 8, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
  • Publication number: 20250108106
    Abstract: This disclosure is directed to a pharmaceutical composition for treating or preventing a disease. The pharmaceutical composition can comprise a polymer-drug nanoaggregate having a polymer and at least one bioactive agent that can comprise STING polypeptide, a nucleic acid encoding said STING polypeptide, a STING inhibitor, a STING activator, a STING agonist, a STING antagonist, a STING modulating molecule, or a combination thereof. The pharmaceutical composition can be a vaccine or an adjuvant for a vaccine. This disclosure is also directed to a method for treating or preventing a disease using the pharmaceutical composition. The disease can include infectious diseases caused by viruses or other pathogens, for example, influenza, rabies, or respiratory illnesses such as severe acute respiratory syndrome (SARS) caused by coronaviruses, such as MERS-CoV, SARS-CoV, and Coronavirus Disease 2019 (COVID-19) caused by the virus SARS-CoV-2 and its variants.
    Type: Application
    Filed: September 10, 2024
    Publication date: April 3, 2025
    Inventors: Lu Lu, Ray Yin, Shibo Jiang, Zezhong Liu, Ming Hsieh, Jie Zhou, Xinling Wang, Qian Wang, Wei XU, Jing Pan, Yubei Zhang, Kai Qi, Qun Sun, Lin Wang, Zhiying Zou, Chunlin Tao
  • Publication number: 20250107454
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.
    Type: Application
    Filed: December 11, 2024
    Publication date: March 27, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
  • Publication number: 20250099398
    Abstract: A graphene acupoint herbal patch (AHP) for warming uterus and relieving pain, and a method of preparation and use thereof are provided, belonging to the technical field of traditional Chinese medicines (TCMs). The graphene AHP for warming uterus and relieving pain includes a TCM, graphene, a hot melt adhesive, a far-infrared ceramic powder, a heat sensitizer, camphor, and menthol. The graphene AHP for warming uterus and relieving pain produces no acute toxicity, has no skin irritation, and does not induce allergies. In the graphene AHP for warming uterus and relieving pain, the release rate of the small drug molecules tetrahydropalmatine, imperatorin, eugenol, and paeoniflorin is higher than that of an ordinary AHP for warming uterus and relieving pain, thus exhibiting a more obvious analgesic effect.
    Type: Application
    Filed: September 13, 2024
    Publication date: March 27, 2025
    Inventors: Fuchun Wang, Jia Liu, Hailin Jiang, Tie Li, Nan Zhang, Jinying Zhao, Wenxuan Cao, Wu Liu, Xuewei Zhao, Lin Wang
  • Patent number: 12262646
    Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.
    Type: Grant
    Filed: December 25, 2023
    Date of Patent: March 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
  • Patent number: 12262647
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Grant
    Filed: March 1, 2024
    Date of Patent: March 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 12260255
    Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.
    Type: Grant
    Filed: September 29, 2022
    Date of Patent: March 25, 2025
    Assignee: International Business Machines Corporation
    Inventors: Jing Jing Wei, Yue Wang, Shu Jun Tang, Yang Kang, Yi Fan Wu, Qi Han Zheng, Jia Lin Wang