Patents by Inventor Lin Wang
Lin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12260255Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.Type: GrantFiled: September 29, 2022Date of Patent: March 25, 2025Assignee: International Business Machines CorporationInventors: Jing Jing Wei, Yue Wang, Shu Jun Tang, Yang Kang, Yi Fan Wu, Qi Han Zheng, Jia Lin Wang
-
Patent number: 12262647Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.Type: GrantFiled: March 1, 2024Date of Patent: March 25, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
-
Publication number: 20250092561Abstract: A charging method of silicon material and a preparation method for single crystal are provided. The charging method includes: disposing the first material layer in the crucible; and disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming. The method for preparing a single crystal, using the silicon charging method described above. The preparation method for single crystal used the charging method for silicon material includes: covering a pot lid on the crucible to define a closed crucible body, and vacuuming the closed crucible body; lifting the closed crucible body into a single crystal furnace, and relieving pressure from the closed crucible body.Type: ApplicationFiled: September 4, 2023Publication date: March 20, 2025Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.Inventors: Lin WANG, Guoqing FAN, Zhi YANG, Haoyang WU, Long XIANG, Lei LI
-
Publication number: 20250092574Abstract: A silicon powder forming method, a silicon block, and a use thereof are provided, which relates to technical field of single crystal growth. The silicon powder forming method according to the present application includes: placing a mold filled silicon powder in a condition for first pressure P1 for a first pressure time T1 to obtain a silicon block, wherein the first pressure P1 and the first pressure time T1 satisfy: 50 MPa?P1?600 MPa, 7 min?T1?15 min. By pressure control, the molded silicon block is easily removed from the mold without crushing dust. The silicon block obtained is easy to crush upon charging, and the particle size distribution of the crushed silicon block is easy to control, resulting in raising less. The silicon block obtained can be directly used for production of Czochralski single crystal, and the charge density is increased to 0.18 g/cm3˜0.25 g/cm3.Type: ApplicationFiled: September 4, 2023Publication date: March 20, 2025Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.Inventors: Lin WANG, Guoqing FAN, Zhi YANG, Haoyang WU, Long XIANG, Lei LI
-
Publication number: 20250093095Abstract: The present application discloses a waste argon separation system capable of reducing emission of cryogenic waste argon. The waste argon separation system capable of reducing emission of cryogenic waste argon includes a valve bank, at least two adsorption towers, sewage discharge channels having at least the same number as the adsorption towers, a gas inlet component, and at least one argon reflux component. The valve bank includes a gas inlet valve, an analytic control valve, and at least two sewage discharge valves. The top of each of the adsorption towers is provided with an argon-rich gas outlet, and the argon-rich gas outlet at the top of each of the adsorption towers is connected to each other to form a regeneration channel. The argon-rich gas outlet at the top of each of the adsorption towers is further connected to an argon-rich gas outlet channel.Type: ApplicationFiled: July 4, 2024Publication date: March 20, 2025Inventors: Zhengxiong Zhang, Andy Hao, Jax Zhu, Qinyou Tang, Mingxing He, Huaqin Liu, Lin Wang
-
Publication number: 20250092568Abstract: A silicon powder molding method, a silicon block, and their applications in the field of single crystal growth technology are provided. The silicon powder molding method of this application includes the following steps: placing a mold filled with silicon powder under a first pressure P1 condition, maintaining the first pressure condition P1 for a continuous duration of a first pressure time T1, and satisfying 50 MPa?P1?600 MPa, 7 minutes ?T1?15 minutes to obtain a silicon block. A medium applying the first pressure P1 is a liquid. Through pressure control, the molded silicon block is easily removed from the mold without breaking and generating dust. The silicon block is easy to crush when filling and has a controllable particle size distribution after crushing. The silicon block can be directly used for the production of Czochralski grown single crystals, increasing a loading density to 0.18 g/cm3˜0.25 g/cm3.Type: ApplicationFiled: September 4, 2023Publication date: March 20, 2025Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.Inventors: Lin WANG, Guoqing FAN, Zhi YANG, Haoyang WU, Long XIANG, Lei LI
-
Publication number: 20250092562Abstract: The present application discloses a crystal rod manufacturing method and a crystal rod belonging to a field of monocrystal growth technologies. The crystal rod manufacturing method of the present application includes a shoulder rotation step and a diameter equalization step, wherein in the shoulder rotation step and/or the diameter equalization step, hydrogen-containing gas is inputted. The hydrogen-containing gas includes hydrogen gas, a mass of the hydrogen gas is mH, a total mass of the hydrogen-containing gas is mtotal, an inequation as follows is satisfied: mH/mtotal?30%. The present application, by inputting the hydrogen gas during the process of manufacturing the crystal rods, can lower an oxygen content of monocrystals to reduce defects in the monocrystalline silicon, which can reduce formation of boron oxygen complexes and prevent a phenomenon of efficiency degradation when boron-doping monocrystals are pulled.Type: ApplicationFiled: September 4, 2023Publication date: March 20, 2025Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.Inventors: Lin WANG, Wenxia ZHANG, Xuebing KANG, Qian GUO
-
Patent number: 12253506Abstract: A method of building upstream-and-downstream configuration of sensors includes determining two sets of geographic position data of a target sensor and a candidate sensor, obtaining pollution-associated periods according to pieces of flow field data, the sets of geographic position data and pieces of target sensing data of the target sensor to determine a pollution-associated period, calculating a correlation between target sensing data obtained by the target sensor during the pollution-associated period and candidate sensing data obtained by the candidate sensor during the associated air pollution period to obtain sensor correlations, and determining the target sensor and the candidate sensor having a upstream-and-downstream relationship with the candidate sensor being used as a satellite sensor of the target sensor when a quantity ratio of sensor correlations being larger than or equal to a correlation threshold is larger than or equal to a default ratio.Type: GrantFiled: October 19, 2022Date of Patent: March 18, 2025Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin Wang, Guang-Huei Gu, Chih-Jen Chen
-
Patent number: 12253486Abstract: A gas-sensitive material, a preparation method therefore and an application thereof, and a gas sensor using the gas-sensitive material are provided. The gas-sensitive material is a carbon material-metal oxide composite nanomaterial formed by compounding a carbon material and metal oxides. The content of the carbon material is 0.5˜20 wt. % and the content of the metal oxides is 80˜99.5 wt. %; the metal oxides contain tungsten oxide and one or more selected from tin oxide, iron oxide, titanium oxide, copper oxide, molybdenum oxide, and zinc oxide; the metal oxides are formed on the carbon material in the form of nanowires, and the nanowires are tungsten oxide-doped nanowires. The gas-sensitive material has reduced resistance, is capable of responding to various gases at a reduced working temperature.Type: GrantFiled: January 26, 2021Date of Patent: March 18, 2025Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, SINOPEC RESEARCH INSTITUTE OF SAFETY ENGINEERING CO., LTD.Inventors: Fei An, Bing Sun, Na Li, Lin Wang, Ning Shi, Wei Xu, Shucai Zhang, Haozhi Wang, Shiqiang Wang, Junjie Feng, Chenyang Zhao
-
Patent number: 12254942Abstract: A control method includes: decoding a third Operand (OP) in a third Mode Register (MR) and a fourth OP in a first MR; and in response to the semiconductor memory being in a preset test mode, controlling, in a case where the third OP meets a first decoding condition, the impedance of a Data Mask (DM) pin to be a first value; or controlling, in a case where the third OP meets a second decoding condition, the impedance of the DM pin to be a second value according to the fourth OP; wherein the third OP is configured to indicate whether the DM pin is a test object in the preset test mode, and the fourth OP is configured to indicate whether the DM pin is enabled.Type: GrantFiled: January 18, 2023Date of Patent: March 18, 2025Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Yoonjoo Eom, Lin Wang, Zhiqiang Zhang, Yuanyuan Gong
-
Publication number: 20250087559Abstract: A TSV structure includes a substrate. A through via penetrates the substrate. A copper layer fills the through via. A trench is embedded in the substrate and surrounds the copper layer, and a material layer fills the trench. The material layer includes W, Cr, Ir, Re, Zr, SiOC glass, hydrogen-containing silicon oxynitride, silicon oxide or spin-on glass.Type: ApplicationFiled: October 18, 2023Publication date: March 13, 2025Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, I-Fan Chang, Jia-Rong Wu
-
Patent number: 12248157Abstract: A projection screen, with a design in which the apexes of multiple triangular pyramidal units of the projection screen in an array arrangement change gradually according to a predetermined relation, an image light shone from a projector is reflected by a microstructure layer having the triangular pyramidal units and then converged in a range centered around the human eyes, so as to reduce the degree of difference in brightness at different viewing positions, thus ensuring that the projection screen is provided with excellent uniformity and high gain.Type: GrantFiled: June 28, 2020Date of Patent: March 11, 2025Assignee: APPOTRONICS CORPORATION LIMITEDInventors: Lin Wang, Xiaofeng Tang, Wei Sun, Yi Li
-
Publication number: 20250075366Abstract: A supporting rod for single crystal furnace and a single crystal furnace are provided. The supporting rod for single crystal furnace includes a rod portion, and a cone head provided at a bottom rod portion. A planar portion is provided at where the cone head is connected with the rod portion, the cone head is completely inserted into a conical hole at a top of a crucible shaft, and the planar portion is in contact with a top edge of the crucible shaft.Type: ApplicationFiled: June 29, 2023Publication date: March 6, 2025Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.Inventors: Jianlong WANG, Jian XU, Jianping WANG, Lin WANG
-
Publication number: 20250077354Abstract: Provided are an encoding method and apparatus for an RAID6 disk array, a decoding method and apparatus for an RAID6 disk array, and a medium. The encoding method comprises: dividing all disks in a RAID6 disk array into two groups to obtain a first disk group and a second disk group; pairing all stripes of the RAID6 disk array to obtain several stripe pairs; and calculating two parity codes of each strip in the several stripe pairs according to a first rule and a second rule.Type: ApplicationFiled: February 23, 2023Publication date: March 6, 2025Applicant: SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.Inventors: Ruizhen WU, Xu ZHANG, Xiaowei WANG, Lin WANG, Jingjing CHEN, Yongxing ZHANG
-
Publication number: 20250081397Abstract: This document describes a vapor chamber within an electronic device. In aspects, an electronic device includes a middle frame that provides mechanical support for the electronic device, a middle plate affixed to the middle frame to define an inner layer of a chassis, and a vapor chamber disposed inside the middle plate. The vapor chamber includes a first region proximate to a heat source and a second region opposite the first region. A coolant is evaporated in a first mode at the first region by heat absorbed from the heat source and is condensed in a second mode in the second region. This vapor chamber permits cooling of elements within the electronic device at lower cost and/or smaller size than many conventional cooling systems.Type: ApplicationFiled: November 1, 2024Publication date: March 6, 2025Applicant: Google LLCInventors: Eric Chuang, Victor Cheng, Cheng-Lin Wang
-
Publication number: 20250075367Abstract: Dual refrigeration systems for a mono-crystal furnace and methods for pulling a mono-crystal. The first heat exchange assembly includes a first heat exchange mechanism capable of exchanging heat, and a first heat exchange channel and a second heat exchange channel communicating with the first heat exchange mechanism. The second heat exchange assembly includes a second heat exchange mechanism capable of exchanging heat, and a third heat exchange channel and a fourth heat exchange channel communicating with the second heat exchange mechanism. The second heat exchange channel and the fourth heat exchange channel are communicated with a cooling assembly of a water-cooled jacket and a cooling assembly of a mono-crystal furnace, respectively. A first fluid is introduced into the first heat exchange channel. A second fluid is circulated in the second heat exchange channel, cooling assembly of water-cooled jacket, the fourth heat exchange channel, and cooling assembly of mono-crystal furnace.Type: ApplicationFiled: June 26, 2023Publication date: March 6, 2025Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.Inventors: Wenxia ZHANG, Shengli WANG, Yanjie ZHOU, Shufeng ZHANG, Lin WANG, Mingyang GONG
-
Patent number: 12243401Abstract: A security device system including portions configured to have a combined state and a separated state. In the combined state, circuitry is configured to have an armed state and a not-armed state, and to trigger an alarm during a breach of the armed state. Depending on the embodiment, at least one of the portions, and in some embodiments more than one of the portions, participate in the armed and not-armed states. In some embodiments, the security device system includes an alarm device portion, a cradle portion, and a stratum portion.Type: GrantFiled: October 10, 2023Date of Patent: March 4, 2025Assignee: Hangzhou Timing Security Technologies Co., Ltd.Inventors: Hexiao Wang, Peter A. Morello, Jr., Lin Wang, Peter Morello, Sr.
-
Publication number: 20250065447Abstract: A method for detecting poor welding in welding and a related device are provided. The method includes the following. An industrial personal computer (IPC) obtains an electrical signal corresponding to an infrared light signal generated by a target weld in a first period. A start moment of the first period is not earlier than a moment at which the complete target weld is formed. The IPC determines whether the target weld has poor welding according to the electrical signal corresponding to the infrared light signal.Type: ApplicationFiled: August 22, 2024Publication date: February 27, 2025Applicant: Guangzhou Diligine Photonics Co., Ltd.Inventors: Jianbiao YANG, Lin WANG, Deyong YOU
-
Publication number: 20250060897Abstract: Disclosed are a data migration method, system and device for a storage server, and a non-transitory readable storage medium. The method includes: according to storage information of a storage server, determining the number n of strips to be migrated; selecting n stripes to be migrated from among c full stripes according to a preset migration rule, and selecting, from the n stripes to be migrated, data blocks to be migrated and migrating the data blocks to the newly inserted disks, so that after the migration is completed, the difference in stripe usage between any two disks in the storage server does not exceed 1; and determining data content of check data blocks of the strips so as to complete data migration of the storage server, and determining data content of check data blocks of the c-n strips by means of incremental update of an erasure code.Type: ApplicationFiled: December 23, 2022Publication date: February 20, 2025Applicant: SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.Inventors: Ruizhen WU, Xiaowei WANG, Lin WANG, Jingjing CHEN, Yongxing ZHANG, Xu ZHANG
-
Patent number: 12232425Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.Type: GrantFiled: November 21, 2023Date of Patent: February 18, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang