Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.

Abstract: An alarm triggering method for a sensor and an electronic device using the same are proposed. The method is applicable to an electronic device and includes the following steps. A sensor signal is received from the sensor. Whether a signal magnitude of the sensor signal satisfies a first triggering condition associated with a first determination threshold is determined. In response to the signal magnitude satisfying the first triggering condition, whether the signal magnitude satisfies a second triggering condition associated with a second determination threshold or a third triggering condition associated with a time determination threshold is further determined, where the second determination threshold is greater than the first determination threshold. When the signal magnitude satisfies the second triggering condition or the third triggering condition, the sensor is determined to be in an alarm state so as to output an alarm signal.

Abstract: A printed circuit board assembly (PCBA) and a method to assemble the PCBA are disclosed. The PCBA includes a printed circuit board (PCB), an image sensing chip and a protection layer. The PCB includes a first insulation layer, a second insulation layer, a first electrically conductive layer, a second electrically conductive layer, and a third electrically conductive layer. The image sensing chip has a number of bonding pads with a sensor portion facing down through the second opening. The PCBA can function as an image sensing module and make the module have the thinnest thickness.

Abstract: Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.

Abstract: A film application apparatus includes a first base configured to couple a film material and a second base rotatably coupled to the first base. The first base defines an opening and two through holes on opposite side of the first base, the through holes communicate with the opening. The second base defines a receiving chamber and the receiving chamber is configured for accommodating a work piece. The film application apparatus further includes a pressing component inserted through the first base, the pressing component penetrating through the opening from the two through holes for pressing the film material against to a face of the work piece.

Abstract: A nozzle includes a nozzle body having a fluid passageway to which extension tubes are communicated. Each extension tube includes an end having an outlet port. The outlet ports are spaced from each other. An apparatus includes the nozzle, a fluid tank into which the extension tubes extends, a fluid shear device mounted in the fluid tank, and a temperature control system in which the fluid tank is mounted. A method includes filling a water phase fluid into the fluid tank. An oil phase fluid flows out of the nozzle body via the outlet ports. The water phase fluid is disturbed and flows out of the outlet ports to form semi-products of microparticles in the fluid tank. Each semi-product has an inner layer formed by the oil phase fluid and an outer layer formed by the water phase fluid. The outer layers of the semi-products are removed to form microparticles.

Abstract: A self-capacitance organic light emitting touch display apparatus includes a thin film transistor substrate, a common electrode layer, an organic light emitting material layer, at least a touch electrode layer including a plurality of touch sensing electrodes, a display controller, and a touch controller. During touch sensing, the touch controller sequentially or randomly applies a capacitance exciting signal to a selected touch sensing electrode, and senses a touch sensing signal at the selected touch sensing electrode. The touch controller applies a shielding reflection signal to the common electrode layer or a reference point of the display controller.

Abstract: This application provides a high power semiconductor device, which is characterized by forming two diodes connected in parallel and a schottky contact on a channel layer to lower the turn-on voltage and turn-on resistance of the high power semiconductor device at the same time and to enhance the breakdown voltage.

Abstract: In some aspects, a stimulated reservoir volume (SRV) parameter for a stimulation treatment applied to a subterranean region is identified. A parameter of a fracture-plane network generated by application of the stimulation treatment is identified. A correlation between the SRV parameter and the fracture-plane network parameter is identified. In some implementations, the SRV and the fracture-plane network are computed based on microseismic event data associated with the stimulation treatment.

Abstract: A headset controller takes a first touch sensor, a second touch sensor, a first pressure sensor, and a second pressure sensor as a control medium for users. The headset controller can generate four different output instructions by the users touching or pressing the operating interface. The headset controller integrates various sensing methods to generate the needed output instructions.

Abstract: A capacitive pressure sensor includes an upper substrate having a first face and a second face opposite to the first face, a first electrode layer with a plurality of first sensing electrodes, a second electrode layer having at least one second sensing electrode, a dielectric layer arranged between the first and the second electrode layers, and a capacitance sensing circuit. In pressure sensing operation, the capacitance sensing circuit sends a capacitance-exciting signal to the at least one second sensing electrode and obtains a pressure sensing signal from the second sensing electrode.

Abstract: A method for controlling an electronic equipment and a wearable device are provided, respectively. The method for controlling the electronic equipment includes the following steps. An inertial signal is detected. A gesture is obtained by dividing the inertial signal or classifying the inertial signal. A controlling command is outputted based on the gesture to control the electronic equipment, such as a desktop device, a portable device or the wearable device.

Abstract: The disclosure provides a touch device, including a protection cover, a pressure-sensing layer and a flat touch-sensing electrode layer. The protection cover is used as an outer protection shield, and an upper surface of the protection cover is provided to users for pressing action. The pressure-sensing layer is disposed under the protection cover to detect touch strength. The flat touch-sensing electrode layer is disposed between the pressure-sensing layer and the protection cover to detect the position of the user's touch.

Abstract: A submarine survey platform, including: a gasbag; a gas tube; a floater; an upper longitudinal plate; a lower longitudinal plate; diaphragm plates including upper openings, lower openings, and trapezoid openings disposed between the upper openings and the lower openings; and diagonal braces. The upper longitudinal plate includes a flat plate and a flanged plate. The lower longitudinal plate is a rectangular plate. The upper longitudinal plate pass through the upper openings, and the lower longitudinal plate pass through the lower openings. The diagonal braces and longitudinal stiffeners are disposed between every two adjacent diaphragm plates. Two diaphragm plates at two ends of the flat plate are provided with a lifting lug. The diagonal braces are symmetrically disposed and include outward braces and inward braces which are crossed with each other. Cross points of the upper/lower longitudinal plate with the diaphragm plates are support points of the upper/lower longitudinal plate.

Abstract: An electronic device includes a transmission interface, a driving circuit, a receiving circuit, a sampling circuit, a detecting circuit, a timing control circuit and a processing circuit. The transmission interface is for connecting to another electronic device via a connecting cable. The driving circuit outputs a backward signal via the transmission interface to the another electronic device. The receiving circuit receives a received signal including the backward signal and a forward signal from the transmission interface. The sampling circuit samples the received signal to obtain a plurality of sample results. The detecting circuit detects transitions of the sample results to obtain a plurality of detection results. The processing circuit generates a control signal according to the detection results, and adjusts a time point at which the driving circuit outputs the backward signal through the timing control circuit.

Abstract: A high voltage semiconductor device including a P type substrate, a high voltage N type well, a first P type well, a drift region, and a P type doping layer is provided. The high voltage N type well and the P type doping layer, which is formed in a region located below the first P type well and the drift region, are formed in the P type substrate. The first P type well is formed in the high voltage N type well. A bottom of the first P type well and a bottom of the P type doping layer are separated from a surface of the P type substrate by a first depth and a second depth larger than the first depth, respectively. The drift region is formed in the high voltage N type well and extending down from the surface of the P type substrate.

Abstract: Provided is a method of preparing a stimuli-responsive multifunctional nanoparticle, including in sequence the steps of: (a) conjugating covalently an active targeting moiety to a hydrophilic polymer to form a targeted polymer, (b) conjugating covalently a redox-responsive moiety to the hydrophilic polymer of the targeted polymer to form a targeted redox-responsive polymer, (c) conjugating covalently a pH-responsive moiety of a drug complex to the redox-responsive moiety of the targeted redox-responsive polymer to form a targeted stimuli-responsive polymer-drug conjugate, wherein the drug complex includes a hydrophobic drug covalently linked to the pH-responsive moiety, and (d) adding the targeted stimuli-responsive polymer-drug conjugate and optionally an imaging agent into an aqueous liquid to allow self-assembly into a stimuli-responsive multifunctional nanoparticle, wherein the hydrophobic drug of the stimuli-responsive multifunctional nanoparticle forms a hydrophobic core, and the imaging agent is incorp

Abstract: The invention discloses a temperature regulation mask and an alignment layer pre-curing device, and is related to the field of manufacturing a liquid crystal display panel. Said temperature regulation mask is suitable for the alignment layer pre-curing device for pre-curing an alignment layer, and includes a base and a pattern arranged on the base. A pattern region of said temperature regulation mask has a different thermal conductivity from a thermal conductivity of a non-pattern region of said temperature regulation mask. A position of the one having a lower thermal conductivity among the pattern region and the non-pattern region of said temperature regulation mask corresponds to a position of said alignment layer corresponding to a metallic wiring region. The present invention can obtain an alignment layer with even thickness and improve a display quality.

Abstract: A display device including a TFT substrate and a display layer is provided. The TFT substrate includes a substrate, a gate layer, a semiconductor layer, a gate dielectric layer, a first electrode layer, a first passivation layer, a second passivation layer, and a second electrode layer. A via penetrates the first passivation layer and the second passivation layer to expose a portion of the first electrode layer, and the via has a sidewall. The second electrode layer is electrically connected to the first electrode layer through the via, the first passivation layer has a first edge on the sidewall of the via, the second passivation layer has a second edge on the sidewall of the via, and the first edge and the second edge are separated by a distance in the range of 500-2000 ?.

Abstract: An electronic device is provided, including a housing, a channel, and a flexible circuit. The housing includes a frame and a buffer structure connected to the frame by overmolding, wherein the hardness of the frame exceeds that of the buffer structure. The channel is extended along a sidewall of the frame, through the housing and adjacent to the buffer structure. The flexible circuit is disposed through the channel to connect a first circuit unit and a second circuit unit of the electronic device.