Abstract: A rotating shaft device includes a base, a rotation member, a slide member, a resistance-providing member, a supporting member, and a linkage unit. The rotation member is rotatable relative to the base between a first rotation position and a second rotation position. The slide member is slidable relative to the base between a first slide position and a second slide position. The resistance-providing member prevents the slide member from moving toward the first slide position when the slide member is in the second slide position. The supporting member is movable relative to the base between an initial position and a supporting position. The linkage unit is convertible between a folded state and an expanded state. When the rotation member is in the first rotation position, the slide member, the linkage unit, and the supporting member are respectively in the first slide position, the folded state, and the initial position.

Abstract: Atomic layer etching is provided. A method can include forming a mask layer over a semiconductive layer. The method can include forming an opening in the hardmask layer, oxidizing a surface of the semiconductive layer, depositing a sacrificial layer over the hardmask layer, and removing the oxidized surface of the semiconductive layer. The oxidation step, the deposition step, and the removal step can be repeated to extend the opening through the semiconductive layer.

Abstract: A semiconductor device includes a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a first lateral direction. The semiconductor device includes third conductive structures each extending along the first lateral direction. The third conductive structures are disposed across the first and second conductive structures. The semiconductor device includes a first semiconductor channel extending along the vertical direction. The first semiconductor channel is disposed between the third conductive structures and the first conductive structure, and between the third conductive structures and the second conductive structure. The first and second conductive structures each have a first varying width along the first lateral direction, and the first semiconductor channel has a second varying width along a second lateral direction.

Abstract: A tape laying device includes a tape transmission mechanism, a compaction head mechanism, a cutter mechanism, a heating mechanism and a motion mechanism. The tape transmission mechanism is configured to transmit the pre-impregnated tape. The compaction head mechanism, connected with the tape transmission mechanism, is configured to depress and drive the pre-impregnated tape transmitted by the tape transmission mechanism to follow a moving path so as to adhere the pre-impregnated tape onto the mould surface. The cutter mechanism is configured to cut the pre-impregnated tape. The heating mechanism, disposed downstream to the cutter mechanism, is configured to heat the pre-impregnated tape. The motion mechanism is used to have the cutter mechanism having an active path to move toward the moving path while the cutter mechanism cuts the pre-impregnated tape.

Abstract: An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.

Abstract: A screening method for a drought-resistant germplasm of Ophiopogon japonicus related to the field of Ophiopogon japonicus planting is provided. The method uses Ophiopogon japonicus of the main production areas, which requires a large amount of water and rainfall during the growth period, the drought-resistant germplasm that is suitable for growing well is conducted with drought stress under the drought condition. The growth indicators and the physiological indicators of different Ophiopogon japonicus germplasm under drought stress conditions are comprehensively evaluated and ranked to evaluate the drought-resistant ability of the different germplasm. The screening method is scientific and effective, and can comprehensively evaluate the drought resistance ability of Ophiopogon japonicus under the drought stress conditions, laying a technical foundation for the screening and promotion of in the Ophiopogon japonicus with drought resistance ability.

Abstract: A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.

Abstract: A method for fabricating a three-dimensional memories is provided. A stack with multiple levels is formed, and each of the levels includes an isolation layer, a metal layer, and a semiconductor layer between the isolation layer and the metal layer. A first trench and a plurality of second trenches are formed along each parallel line in the stack of the levels. The isolation layers and the metal layers in the parallel lines are removed through the first trench and the second trenches, so as to expose the semiconductor layers in the parallel line. A plurality of memory cells are formed in the parallel lines of the levels. In each of the levels, each of the memory cells includes a transistor and a channel of the transistor is formed by the semiconductor layer in the parallel line.

Abstract: A rekeyable lock cylinder with a cylinder body and a plug assembly. The lock cylinder includes a plurality of key followers and a corresponding plurality of racks disposed in the plug assembly. The lock cylinder includes, for example, a locking bar for blocking rotation of the plug assembly with respect to the cylinder body to prevent unlocking of the rekeyable lock cylinder with an unauthorized object. In some embodiments, the locking bar is configured such that torqueing the plug assembly with an unauthorized object applies force to the locking bar without translating such force to the plurality of racks. This type of arrangement enhances torque resistance of the lock cylinder against attempted forced entry.

Abstract: A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.

Abstract: A coil structure comprises a coil and a conductive terminal part, wherein the coil is formed by a conductive wire comprising a metal wire and at least one insulating layer encapsulating the metal wire, wherein a first terminal part of the metal wire is exposed from the at least one insulating layer, wherein a first portion of the conductive terminal part encapsulates the first terminal part of the metal wire and a second portion of the conductive terminal part extends from said first portion as an electrode for electrically connecting to an external circuit.

Abstract: A communication device for handling a reception of a multicast broadcast service (MBS) transmission and a small data transmission (SDT) includes: triggering the SDT with a network, when at least one triggering condition is satisfied, wherein the at least one triggering condition comprises that the communication device is not receiving first downlink (DL) data associated with the MBS transmission; transmitting uplink (UL) data associated with the SDT to the network or receiving second DL data associated with the SDT from the network; and receiving a radio resource control (RRC) message from the network to terminate the SDT.

Abstract: The present invention provides crystalline forms or amorphous forms of N-(phenylsulfonyl) benzoamide compound or its salts or solvates used as a Bcl-2 inhibitor, and the preparation method and the application thereof.

Abstract: This application provides techniques of generating an audio resource pool based on extracting audio from target videos. The techniques comprise obtaining target videos; determining at least one to-be-processed video from the target videos based on audio features of the target videos; extracting audio from the at least one to-be-processed video; and generating an audio resource pool based on the extracted audio.

Abstract: A light-emitting substrate includes a base substrate, an auxiliary electrode line, at least one light-emitting device, and at least one light-detecting device. The auxiliary electrode line is disposed on the base substrate. The at least one light-emitting device is disposed above the base substrate, and a light-emitting device includes a first electrode, a light-emitting functional layer and a second electrode that are sequentially stacked in a direction moving away from the base substrate. The at least one light-detecting device is disposed above the base substrate, and a light-detecting device includes a third electrode and a fourth electrode. The auxiliary electrode line is coupled to the fourth electrode and the second electrode.

Abstract: A concealed text feature corresponding to a text data block of a plurality of text data blocks included in the text data and at least one concealed text feature corresponding to at least one text data block subsequent to the text data block are generated. A coarse fusion is performed on (i) the concealed text feature corresponding to the text data block and (ii) the at least one concealed text feature corresponding to the at least one text data block subsequent to the text data block to obtain at least one coarse fusion text feature. A fine fusion is performed on the at least one coarse fusion text feature to obtain a fine fusion text feature corresponding to the text data block. A length corresponding to the fine fusion text feature is regulated. The fine fusion text feature with the regulated length is transformed into the acoustic feature.

Abstract: A semiconductor package includes a substrate and at least one integrated circuit (IC) die. Substrate solder resist has substrate solder resist openings exposing substrate bonding pads of the bonding surface of the substrate, and die solder resist has aligned die solder resist openings exposing die bonding pads of the bonding surface of the IC die. A ball grid array (BGA) electrically connects the die bonding pads with substrate bonding pads via the die solder resist openings and the substrate solder resist openings. The die solder resist openings include a subset A of the die solder resist openings in a region A of the bonding surface of the IC die and a subset B of the die solder resist openings in a region B of the bonding surface of the IC die. The die solder resist openings of subset A are larger than those of subset B.

Abstract: A wireless communication method, a User Equipment (UE), and a Base Station (BS) for performing repetition-based Uplink (UL) transmissions are provided. The wireless communication method includes receiving, from the BS, a Radio Resource Control (RRC) message including first information indicating a repetition type, second information indicating a plurality of Transmission Configuration Indicator (TCI) states, and third information including a plurality of items each configuring a Physical Uplink Shared Channel (PUSCH) resource allocation; receiving Downlink Control Information (DCI) that indicates one of the plurality of items; determining a set of nominal PUSCH repetitions; and transmitting at least one actual PUSCH repetition that is determined based on the set of nominal PUSCH repetitions, wherein each nominal PUSCH repetition in the set of nominal PUSCH repetitions maps to one of the plurality of TCI states.

Abstract: The present invention provides a multifunctional pacemaker wire conversion device and an application method thereof. The device includes a box body, a permanent electrode female connector, a permanent electrode male connector, a temporary electrode female connector, a temporary electrode male connector, and a circuit line. A cavity is formed in the box body, the permanent electrode female connector, the permanent electrode male connector, the temporary electrode female connector, and the temporary electrode male connector are disposed on the box body, and the permanent electrode female connector, the permanent electrode male connector, the temporary electrode female connector, and the temporary electrode male connector are electrically connected to each other through the circuit line disposed in the cavity.