Abstract: A device includes a semiconductor substrate and a first gate stack over the semiconductor substrate, the first gate stack being between a first gate spacer and a second gate spacer. The device further includes a second gate stack over the semiconductor substrate between the first gate spacer and the second gate spacer and a dielectric material separating the first gate stack from the second gate stack. The dielectric material is at least partially between the first gate spacer and the second gate spacer, a first width of an upper portion of the dielectric material is greater than a second width of a lower portion of the dielectric material, and a third width of an upper portion of the first gate spacer is less than a fourth width of a lower portion of the first gate spacer.

Abstract: An electronic device is provided. The electronic device includes a substrate, an electronic unit, and a circuit layer. The substrate has a first surface and a second surface, and the second surface is opposite the first surface. The electronic unit is disposed on the first surface. The circuit layer is disposed on the second surface. The circuit layer includes a plurality of first wirings and a plurality of second wirings. The plurality of first wirings are used to transmit a first signal. The plurality of second wirings are used to transmit a second signal. Moreover, a width of one of the plurality of second wirings is different from a width of one of the plurality of first wirings.

Abstract: Methods, systems, and devices for wireless communications are described. For instance, a flow control layer of a UE may provide a capability message to an application layer including an indication that the UE supports a service for providing flow control information for support of extended reality traffic and may receive a message from an application of the application layer registering a flow associated with the application with the service. The flow control layer may provide, to the application via the service, an indication that a quantity of packets or bytes in a buffer of the flow control layer fails to satisfy a threshold. The UE may obtain, from the application, a packet associated with the flow based on providing the indication that the quantity of packets or bytes in the buffer fails to satisfy the threshold and may transmit, to a network entity, a message including the obtained packet.

Abstract: The technology involves determining a minimum lateral gap distance between a vehicle configured for autonomous driving and one or more other objects in the vehicle's environment. The minimum lateral gap is used when determining whether to have a driver take over control of certain driving operations. This provides a measure of safety during disengagements or other change of control events. Determining the minimum lateral gap includes calculating a budgeted distance based on a cross-track error for a lateral position of the vehicle, an allowed actual gap distance to an object in the vehicle's environment, and a perception error associated with a location of the object in the vehicle's environment. This determination can be done for a set of possible operating speeds and steering rate limit combinations. The vehicle's control system may notify the driver to take control, for instance with audible, visual and/or haptic notifications.

Abstract: A 3D pop-up card assembly having a base card and a pop-up construct that pops up when the base card is opened. The pop-up construct is attached to the base card using a plurality of hinge elements. Each of the hinge elements has a transition section that leads to an anchor tab. The transition section contains fold lines along which each of the hinge elements can fold. The anchor tab of each hinge element is attached to the base card. When the base card is opened, each hinge element can rotate in unaligned planes, therein applying tension to the pop-up construct as the orientation between the base card and the pop-up construct changes.

Abstract: Described herein is a polyurethane foam prepared with certain polytetrahydrofurans and optional polyether polyols. The polyurethane foam is characterized by low hardness increase at low temperature as compared with conventional polyurethane foam, and is suitable for use in products which can be exposed to low temperature such as snow boots.

Abstract: A method for processing semiconductor wafers includes obtaining measurement data from a surface of a semiconductor wafer processed by a front-end process tool. The method includes determining a center plane of the wafer based on the measurement data, generating raw shape profiles, and generating ideal shape profiles. The method further includes generating Gapi profiles based on the raw shape profiles and the ideal shape profiles, and calculating a Gapi value of the semiconductor wafer based on the Gapi profiles. The generated Gapi profiles and/or the calculated Gapi value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first and second diode in a semiconductor wafer, an ESD clamp circuit and a first conductive structure on a backside of a semiconductor wafer. The first diode is coupled between an input output (IO) pad and a first node. The second diode is coupled to the first diode, and coupled between the IO pad and a second node. The ESD clamp circuit is in the semiconductor wafer, coupled to the first and second node, and between the first and second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer that is coupled to a reference voltage supply. The second diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit. The first conductive structure is configured to provide a reference voltage to the first signal tap region.

Abstract: A monolithic three-dimensional (3D) integrated circuit (IC) device includes a lower tier including a lower tier cell and an upper tier arranged over the lower tier. The upper tier has a first upper tier cell and a second upper tier cell separated by a predetermined lateral space. A monolithic inter-tier via (MIV) extends from the lower tier through the predetermined lateral space, and the MIV has a first end electrically connected to the lower tier cell and a second end electrically connected to the first upper tier cell.

Abstract: Methods for selectively depositing a metal layer over a gate structure and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate structure over the channel region; a gate spacer adjacent the gate structure; a first dielectric layer adjacent the gate spacer; a barrier layer contacting a top surface of the gate spacer and a side surface of the first dielectric layer, the barrier layer including a nitride; and a metal layer over the gate structure adjacent the barrier layer, the metal layer having a first width equal to a second width of the gate structure.

Abstract: A head assembly for a dental contra-angle hand-piece and a dental contra-angle hand-piece are provided. The head assembly includes a hand-piece main body, a reversing valve movably connected to the hand-piece main body, and an inner water tube connected to the hand-piece main body, wherein the hand-piece main body is provided with a first flow channel and a second flow channel independent from each other, the first flow channel is configured to be in communication with a liquid outlet of a motor, and the second flow channel is configured to be in communication with an external pipeline; the reversing valve is provided with a confluence channel, the reversing valve is configured to enable, when moving relative to the hand-piece main body, the first flow channel and the second flow channel to alternatively be in communication with the inner water pipe through the confluence channel.

Abstract: A device for in-situ measurement of substance migration and transformation on a sediment-water interface includes a floating platform. Three take-up and pay-off components are fixedly connected to the edge of a top surface of the floating platform. Each take-up and pay-off component comprises an L-shaped base, a cable take-up and pay-off assembly, vertical rods, a guide sheave wheel, an adjustment assembly and a first cable. Two DGT samplers are fixedly connected to bottom ends of two three take-up and pay-off components. Water quality monitoring sensors are fixedly connected to the two first cables fixedly connected to the two DGT samplers, respectively. A sediment collector is fixedly connected to a bottom end of the other take-up and pay-off component. Sampling can be performed in-situ directly through DGT flat plates to avoid the impact of environmental changes.

Abstract: A terahertz wave detection chip includes a substrate and at least one detection structure. The detection structure is disposed on a surface of the substrate. The detection structure includes a metamaterial layer and a hydrophilic layer, and the hydrophilic layer is disposed on the metamaterial layer.

Abstract: In an approach, a processor receives, at an edge node, a message from an IoT device associated with the edge node, the message being embedded with at least one non-fungible token (NFT) and each of the at least one NFT representing a corresponding authorization associated with the IoT device. A processor retrieves, at the edge node, the at least one NFT from the received message. A processor validates, at the edge node, the received message based on the retrieved at least one NFT. A processor, responsive to validating the received message, forwards, by the edge node, the received message to a center node associated with the edge node.

Abstract: A computer-implemented method includes converting tabular data to a text representation, generating metadata associated with the text representation of the tabular data, outputting one or more natural language data descriptions indicative of the tabular data in response to utilizing a large language model (LLM) and zero-shot prompting of the metadata and text representation of the tabular data, outputting one or more summaries utilizing the LLM and appending a prompt on the one or more natural language data descriptions, selecting a single summary of the one or more summaries in response to the single summary having a smallest validation rate, receiving a query associated with the tabular data, outputting one or more predictions associated with the query, and in response to meeting a convergence threshold with the one or more predictions generated from the one or more iterations, output a final prediction associated with the query.

Abstract: N direct current coupling units are configured to provide electric energy to a load. Each of the N direct current coupling units includes an energy storage unit. The energy storage unit is configured to store electric energy or supply power to the load. Herein, N is a positive integer. A primary controller is configured to determine an expected discharge power value of energy storage units in the N direct current coupling units, where the expected discharge power value is a power value that indicates power that needs to be discharged by the energy storage units in the N direct current coupling units, and determine actual discharge power of the energy storage unit in each direct current coupling unit based on the expected discharge power value and first characteristic information of the energy storage unit in the direct current coupling unit.