Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Abstract: A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.

Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Abstract: A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.

Abstract: Initial film layers prepared from tin(II) chloride spontaneously generate open cavities when the initial film layers are thermally cured to about 400° C. using a temperature ramp of 1° C./minute to 10° C./minute while exposed to air. The openings of the bowl-shaped cavities have characteristic dimensions whose lengths are in a range of 30 nm to 300 nm in the plane of the top surfaces of the cured film layers. The cured film layers comprise tin oxide and have utility in gas sensors, electrodes, photocells, and solar cells.

Abstract: An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

Abstract: Initial film layers prepared from tin(II) chloride spontaneously generate open cavities when the initial film layers are thermally cured to about 400° C. using a temperature ramp of 1° C./minute to 10° C./minute while exposed to air. The openings of the bowl-shaped cavities have characteristic dimensions whose lengths are in a range of 30 nm to 300 nm in the plane of the top surfaces of the cured film layers. The cured film layers comprise tin oxide and have utility in gas sensors, electrodes, photocells, and solar cells.

Abstract: Initial film layers prepared from tin(II) chloride spontaneously generate open cavities when the initial film layers are thermally cured to about 400° C. using a temperature ramp of 1° C./minute to 10° C./minute while exposed to air. The openings of the bowl-shaped cavities have characteristic dimensions whose lengths are in a range of 30 nm to 300 nm in the plane of the top surfaces of the cured film layers. The cured film layers comprise tin oxide and have utility in gas sensors, electrodes, photocells, and solar cells.

Abstract: An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

Abstract: An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

Abstract: A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites.

Abstract: An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

Abstract: A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites.

Abstract: A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites.

Abstract: Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.

Abstract: Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.

Abstract: Provided is a hydrophobic negative tone developable (NTD) resist composition comprising (a) a hydrophobic polymer having (i) at least one nonpolar acid-stable group; and (ii) at least one nonpolar acid-labile group, and (b) a photoacid generator (PAG) that may or may not be bound to the polymer, wherein a nonpolar aromatic or aliphatic organic hydrocarbon solvent is used to develop the unexposed regions of the NTD resist film and the resist film is not developable in an aqueous base developer, such as 0.26 N TMAH.

Abstract: Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.