Abstract: An array substrate includes a pixel driving circuit, a base substrate, a first conductive layer, a first dielectric layer, a second conductive layer, and a data line. The pixel driving circuit includes a driving transistor, a first transistor, a capacitor, and a second transistor. The first conductive layer is laminated at a side of the base substrate and includes a first conductive portion. The first dielectric layer is laminated at a side of the first conductive layer away from the base substrate. The second conductive layer is laminated at a side of the first dielectric layer away from the base substrate, and includes a fourth gate line. The first conductive layer further includes a first gate line. An orthographic projection of the first gate line on the base substrate is located between orthographic projections of the fourth gate line and the first conductive portion on the base substrate.

Abstract: A power converter includes an input, an output, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, and a sixth switch. The first switch and the second switch are coupled between the input and a reference voltage. The third switch is coupled between a first capacitor and the fourth switch. The first capacitor is coupled to the reference voltage. The fourth switch is coupled between the output and the third switch. A terminal of a second capacitor is coupled between the third switch and the fourth switch, and another terminal of the second capacitor is coupled between the first switch and the second switch through an inductor. The fifth switch is coupled between the reference voltage and the common node of the inductor and the second capacitor. The sixth switch is coupled between the common node and the first capacitor.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: A display substrate, a manufacturing method therefor, and a display apparatus are disclosed. The display substrate includes a display area (100), a bonding area (200) and a bezel area (300). On a plane perpendicular to the display substrate, the display substrate includes a base substrate (101) and a driving circuit layer (102). The substrate (101) at least includes a base conductive layer disposed between a first flexible layer (10A) and a second flexible layer (10C), the base conductive layer at least includes a first connection line (70), the driving circuit layer (102) at least includes a data signal line (60) and a second connection line (80), the second connection line (80) is connected to the first connection line (70) through a first lapping via (DV1), the data signal line (60) is connected to the second connection line (80) through a second lapping via (DV2).

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, during an ongoing data session on a first subscriber identity module (SIM), an incoming voice call on a second SIM. The UE may determine, during the ongoing data session on the first SIM, a caller identifier associated with the incoming voice call on the second SIM. The UE may initiate, on the first SIM, a communication to the caller identifier associated with the incoming voice call in concurrency with the ongoing data session. Numerous other aspects are described.

Abstract: Disclosed in the present invention are a polypeptide fragment, a derivative of the polypeptide fragment, and applications of the derivative of the polypeptide in the preparation of drugs for preventing and treating fibrosis diseases.

Abstract: The invention relates to an antibody or antigen binding fragment thereof which is capable of binding to CD1a, which is particularly suitable for treating or preventing one or more inflammatory skin or mucosal disorder, or disease or one or more associated systemic disease or disorder, or one or more inflammatory drug reaction which manifests systemically, or a CD1a-expressing malignancy

Abstract: A mask characterization method comprises measuring an interference signal of a reflection or transmission mask for use in lithography; and determining a quality metric for the reflection or transmission mask based on the interference signal. A mask characterization apparatus comprises a light source arranged to illuminate a reflective or transmissive mask with light whereby mask-reflected or mask-transmitted light is generated; an optical grating arranged to convert the mask-reflected or mask-transmitted light into an interference pattern; and an optical detector array arranged to generate an interference signal by measuring the interference pattern.

Abstract: Various embodiments of the present disclosure are directed toward an integrated chip including an undoped layer overlying a substrate. A first barrier layer overlies the undoped layer. A doped layer overlies the first barrier layer. Further, a second barrier layer overlies the first barrier layer, where the second barrier layer is laterally offset from a perimeter of the doped layer by a non-zero distance. The first and second barrier layers comprise a same III-V semiconductor material. A first atomic percentage of a first element within the first barrier layer is less than a second atomic percentage of the first element within the second barrier layer.

Abstract: A wide-angle lens assembly includes a first, a second, a third, a fourth, a fifth, a sixth, a seventh, and an eighth lenses, all of which are orderly arranged from an object side to an image side along an optical axis. The first, fourth, fifth, seventh, and eighth lenses are with refractive power. The second, third, and sixth lenses are with positive refractive power. The wide-angle lens assembly satisfies at least one of the following conditions: 0.8?f/D22?3; 0.025 degrees?1?1/??0.3 degrees?1; 0.03 degrees?1?1/??0.35 degrees?1; 0.5??/??30; wherein f is an effective focal length of the wide-angle lens assembly, D22 is an effective optical diameter of an image side surface of the second lens, ? is a maximum tangent angle of a first cemented surface, and ? is a maximum tangent angle of a second cemented surface.

Abstract: A semiconductor package includes a first component, a second component, and a stiffener rib. The first component is disposed on a substrate. The second component is disposed aside the first component and on the substrate. The stiffener rib is disposed between the first component and the second component. The lid is attached to the stiffener rib, the first component and the second component. The lid includes a recess portion on the stiffener rib. A first sidewall and a second sidewall of the recess portion laterally surround the stiffener rib. A first top space between a first top sidewall of the stiffener rib and the first sidewall of the recess portion is greater than a second top space between a second top sidewall of the stiffener rib and the second sidewall of the recess portion.

Abstract: A method of manufacturing an integrated circuit (IC) device includes forming, in a circuit region, active regions elongated along a first axis, and gate regions over the active regions and elongated along a second axis. The method further includes depositing a lower metal layer over the circuit region, patterning the lower metal layer to form lower conductive patterns elongated along the first axis, depositing an upper metal layer over the lower metal layer, and patterning the upper metal layer to form upper conductive patterns elongated along the second axis and first lateral upper conductive pattern. The upper conductive patterns include at least one input or output configured to electrically couple the circuit region to external circuitry. The first lateral upper conductive pattern is contiguous with and projects, along the first axis, from a first upper conductive pattern, and is over and electrically coupled to a first lower conductive pattern.

Abstract: A light fixture (50), comprising: an electronics housing (51); first and second heat sink structures (52, 54, 56, 58, 60, 62) coupled to the electronics housing, wherein each heat sink structure of the first and second heat sink structures is defined at least in part by a heat sink outer arc (64) having first and second end points (72, 74), and wherein each heat sink structure is further defined at least in part by two heat sink radii (66, 68) extending from the first and second end points, respectively, to a center point (P) of the light fixture; first and second light sources (53); at least two lenses (106, 108, 110, 112, 114, 116) comprising a first lens attached to the first heat sink structure and covering the first light source and a second lens attached to the second heat sink structure and covering the second light source, wherein each lens of the first and second lenses is defined at least in part by a lens outer arc (120) having first and second end points (128, 130), wherein each lens is further de

Abstract: An operation method of a power supply circuit which is provided with an input voltage to generate a positive output voltage and a negative output voltage is proposed. The power supply circuit includes five switches and is electrically connected with an inductor through a first inductor node and a second inductor node. The disclosed operation method includes determining the power supply circuit to operate in a mode, which includes three operation phases, a first, second and third phase. Energizing currents can be generated and provided both to enhance the positive output voltage and negative output voltage by employing the proposed operation method. Since there is no transition of the voltage level of the second inductor node during the second phase to third phase transition, it is believed that the present invention effectively achieves in suppressing redundant power switching loss and providing optimized output power efficiency.

Abstract: A first network node (e.g., a UE) may receive, from a second BS network node (e.g., a base station), DCI. The first network node may perform, based on the DCI, a BWP switch from a first BWP to a second BWP. The first network node may perform, after the BWP switch, a BWP switch failure detection procedure that results in a first determination or a second determination. The first determination may be indicative that the BWP switch was successful and the second determination may be indicative that the BWP switch was not successful. To perform the BWP switch failure detection procedure, the first network node may determine whether one or more failure conditions are satisfied. The one or more failure conditions may include at least one of a BLER greater than a threshold, occurrence of one or more tune away events, or non-receipt of an uplink grant on the second BWP.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: In some examples, an electronic device comprises a processor and a power circuit coupled to the processor. The power circuit is to provide power to the processor and to measure a current drawn from the power circuit by the processor. The electronic device also comprises a voltage regulator controller coupled to the processor and the power circuit. The voltage regulator controller is to receive a current usage prediction from the processor, receive the measurement from the power circuit, compare the current usage prediction and the measurement, and, based on the comparison, drive the power circuit in accordance with the measurement instead of the current usage prediction.

Abstract: A display substrate includes first and second display regions, and a base substrate. A plurality of sub-pixels are arranged on a side of the base substrate, where the-sub-pixels include a first pixel driving circuit and a first light-emitting device connected to each other in the first display region, and the first pixel driving circuit includes at least a compensation transistor, a switching transistor, and a light-emitting device initialization transistor each having an active layer. A scan signal line is provided in the first display region. An orthographic projection of the scan signal line on the base substrate overlaps with that of the active layer of each of the compensation transistor and the light-emitting device initialization transistor, or that of the active layer of each of the switching transistor and the light-emitting device initialization transistor on the base substrate.

Abstract: A method for regulating an ILK signaling pathway in a cell, includes administering to the cell exosomes derived from mesenchymal stem cells, in particular mesenchymal stem cells derived from induced pluripotent stem cells. A method is provided for treating ILK signaling pathway related diseases using the exosomes. A pharmaceutical composition is provided for treating ILK signaling pathway related diseases, and includes exosomes derived from mesenchymal stem cells.

Abstract: The present disclosure provides an exemplary semiconductor structure that includes a substrate having a conductive feature disposed in a top portion of the substrate, a metal line above the substrate and in electrical coupling with the conductive feature, a dielectric feature disposed on a sidewall of the metal line, an etch stop layer disposed on the dielectric feature and the meta line, and a via extending through the etch stop layer and in physical contact with top surfaces of the dielectric feature and the metal line. The metal line has a first metal, and the via has a second metal different from the first metal. The top surface of the dielectric feature is higher than the top surface of the metal line.