Abstract: Systems, apparatuses, and methods for implementing a centralized interrupt controller to aggregate interrupts generated across multiple semiconductor dies are disclosed. A system includes multiple interrupt sources on multiple semiconductor dies. A centralized interrupt controller on one of the semiconductor dies receives and aggregates interrupts from the multiple interrupt sources on the multiple semiconductor dies. This facilitates a single transmission point for forwarding the interrupts to the processor and operating system responsible for handling interrupts. Each interrupt source embeds an ID when conveying an interrupt to the interrupt controller. This allows the interrupt controller to differentiate between the interrupt sources and to identify which source generated a given interrupt. The interrupt controller conveys an indication of the source of the interrupt to the processor when forwarding the interrupt to the processor.

Abstract: The present application discloses a ceiling-mount air disinfector, i.e., an air disinfection troffer, including: a housing; a first air outlet and a first air inlet respectively near two opposing ends of a side of the housing; a filter covering the first air inlet; a cross flow fan located near the first air outlet, and an air disinfection apparatus disposed in the housing including an ultraviolet disinfection mechanism and an air rectifying chamber, said air rectifying chamber including a plurality of air ducts configured in parallel. In operation, ultraviolet light and air flow are introduced into the air ducts, traveling toward each other along a long side of the air ducts so that maximized air-light interaction time is achieved for the best disinfection efficacy.

Abstract: The present invention is directed to cinnolinyl and quinolinyl pyrazol-4-yl-pyridine compounds which are allosteric modulators of the M4 muscarinic acetylcholine receptor. The present invention is also directed to uses of the compounds described herein in the potential treatment or prevention of neurological and psychiatric disorders and diseases in which M4 muscarinic acetylcholine receptors are involved. The present invention is also directed to compositions comprising these compounds. The present invention is also directed to uses of these compositions in the potential prevention or treatment of such diseases in which M4 muscarinic acetylcholine receptors are involved.

Abstract: The present invention provides a joint optimization method and system for delay and spectrum occupation in a cloud-edge collaborative network. The method includes: initializing a cloud-edge collaborative network, and generating a set of user requests; establishing a target function of minimum average end-to-end delay and minimum spectrum slot occupation of a user request; during processing of each user request based on the target function, sequentially determining whether a node and path selection uniqueness constraint, a mobile edge computing (MEC) server load constraint, a spectrum resource occupation and uniqueness constraint, a spectrum continuity constraint, and a spectrum consistency constraint are satisfied, where if all constraints are satisfied, the user request is successfully processed, and the process turns to step S4; or if any constraint is not satisfied, the user request fails to be processed; and calculating average end-to-end delay and spectrum resource occupancy of the user request.

Abstract: An apparatus has a current spreading base with an n-contact. The current spreading base has a small n-type resistivity to promote lateral electron flow. A current spreading cap is on top of the current spreading base. The current spreading cap has a large n-type resistivity to suppress vertical electron flow and promote lateral electron flow. An active region is on top of the current spreading cap. A p-type structure is on top of the active region with a p-contact. Sheet resistance of the current spreading base is experimentally established, the half width xF of a mesa is selected and the current spreading cap thickness hc is selected to collectively promote uniform current injection into the active region.

Abstract: A substrate structure includes an AlN template layer formed on a substrate. Depressions sealed by the AlN template layer are formed on a surface of the substrate at an interface between the substrate and the AlN template layer, the sealed depressions contain discrete depressions and depression networks and have a lateral size in the range of 20-100 nm, a vertical dimension in the range of 20-100 nm, and a density in the range of 1.0×109-2.0×1010 cm?2. The substrate structure is used for light-emitting diodes with improved optical output power efficiency.

Abstract: The invention provides a Probiotic microcapsule and a preparation method thereof, relating to the technical field of Probiotic products. The method includes the following steps: (a) preparing a capsule core containing Probiotics: mixing the capsule core materials including Probiotic powder, microcrystalline cellulose and starch, then adding a hydroxypropyl methylcellulose solution thereinto, while mixing evenly, making the obtained mixture materials into spherical particulate capsule cores by the extrusion spherization method; (b) coating by atomization: coating the microcapsule cores with a coating material solution in a single layer or multiple layers by atomization, getting core-shell microcapsules. The Probiotic microcapsules prepared by the present invention have a large encapsulation, uniform microcapsule particles, controllable particle size, storage-resistance, targetability to intestinal tracts, resistance to gastric acids and high temperature stability.

Abstract: Disclosed are a Nested Named Entity Recognition method based on part-of-speech awareness, system, device and storage medium therefor. The method uses a BiLSTM model to extract a feature of text word data in order to obtain a text word depth feature, and each text word of text to be recognized is initialized into a corresponding graph node, and a text heterogeneous graph of the text to be recognized is constructed according to a preset part-of-speech path, the text word data of the graph nodes is updated by an attention mechanism, and the features of all graph nodes of the text heterogeneous graph are extracted using the BiLSTM model, and a nested named entity recognition result is obtained after decoding and annotating. The present disclosure can recognize ordinary entities and nested entities accurately and effectively, and enhance the performance and advantages of the nested named entity recognition model.

Abstract: Disclosed are techniques for providing a unified beam indication framework using multiple transmission-reception points. The techniques are performed by the disclosed apparatuses, systems, methods, and computer readable media. In one aspect, a method of wireless communication is disclosed. The method includes receiving, at a wireless device, an indication of a plurality of beam states. The method further includes performing, using the indication, a communication operation by the wireless device. In another aspect, another method of wireless communication is disclosed. The method includes transmitting, from a network node, an indication of a plurality of beam states, wherein a wireless device performs, using the indication, a communication operation.

Abstract: An UV or DUV light-emitting diode package includes: a foundation; a first metal layer, a second metal layer, and third metal layer formed on a top surface of the foundation, wherein the first metal layer and the second metal layer are electrically isolated by a first gap, the third metal layer surrounds the first and second metal layers and is electrically isolated from the first and second metal layers by a second gap; a lens attached to the top surface of the foundation, wherein a cavity is formed between the foundation and the lens; a chip disposed in the cavity, wherein an anode of the chip is electrically connected to the first metal layer and a cathode of the chip is electrically connected to the second metal layer; and a fluid encapsulate, wherein the cavity is fully or partially filled with the fluid encapsulate.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A reasonable millisecond time control method for excavation blasting of a tunnel is provided, and includes: acquiring physical mechanical parameters to establish a millisecond blasting model, and designing four dimensions blasting parameters of explosive quantity, hole number, inter-hole millisecond and inter-row millisecond; simulating, based on the millisecond blasting model, a blasting process of an explosive package using blasting parameters to obtain a blasting vibration curve; obtaining single-hole blasting vibration waveforms, solving a vibration synthesis curve through a vibration synthesis theory; comparing the vibration synthesis curve with the blasting vibration curve to obtain a coupling relationship of blasting parameters; determining a target group of explosive quantity and hole numbers, determining a target millisecond through the coupling relationship of blasting parameters, and relating a millisecond blasting control strategy to control, and it is used for tunneling project to reduce cut blas

Abstract: Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a first fin extending along a first direction, a second fin extending parallel to the first fin, and a gate structure over and wrapping around the first fin and the second fin, the gate structure extending along a second direction perpendicular to the first direction. The first fin bents away from the second fin along the second direction and the second fin bents away from the first fin along the second direction.

Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.

Abstract: A packaging structure includes: a substrate provided with a through-cavity penetrating up and down, and a metal heat sink on a front surface of the substrate; a bonding chip mounting area and a first passive element mounting area on the front surface, and a flip chip mounting area, a second passive element mounting area and a pin lead mounting area are provided on a back surface of the substrate; a first sealing ring located at the periphery of the bonding chip mounting area and the first passive element mounting area; a first cover plate packaged on the first sealing ring; a second sealing ring located at the periphery of the flip chip mounting area and the second passive element mounting area with the pin lead mounting area being located at the periphery of the second sealing ring; and a second cover plate packaged on the second sealing ring.

Abstract: Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a first fin extending along a first direction, a second fin extending parallel to the first fin, and a gate structure over and wrapping around the first fin and the second fin, the gate structure extending along a second direction perpendicular to the first direction. The first fin bents away from the second fin along the second direction and the second fin bents away from the first fin along the second direction.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: The invention relates to the technical field of bioengineering and provides a method for improving the specificity and affinity of an aptamer. The method includes: S1, screening a target of an aptamer from a compound information database by virtual computing; S2, verifying the screening result in Step S1 through experiments; S3, performing virtual saturation mutation on a site of the aptamer, and screening out a mutation site of the aptamer; S4, performing base substitution to the mutation site of the aptamer; and S5, detecting the binding parameter of the aptamer after base substitution with the target screened in Step S1, and selecting an aptamer with improved specificity and affinity after base substitution. An efficient molecular design-guided method is developed by computer rational calculation, to improve the specificity and binding affinity of the aptamer by directional modification. The present invention is of great significance for the practical application of aptamers.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A device for rapidly detecting energy efficiency of a permanent magnet synchronous motor includes a test platform, an energy circulation device, and a data synchronous acquisition module, the test platform being fixedly connected to support legs via threads, an upper end surface of the test platform being provided with baffles to define a motor mounting tank, a bolt hole being provided in a surface of an outer baffle of the motor mounting tank, the energy circulation device being mounted on a fixed baffle on one end of the motor mounting tank, a second intelligent power analyzer, a first intelligent power analyzer, and a temperature inspection instrument being sequentially mounted on an upper surface of a tail end on a right side of the test platform, and the data synchronous acquisition module being provided on one end of an inner wall of the motor mounting tank.