Abstract: A method includes a processor of an electronic device receiving first input signals from a first sensor in response to user contact at a first edge of the device and second input signals from a second sensor in response to user contact at a second edge of the electronic device. The first and second sensors are covered by a housing of the device. The processor determines an external context of the device based on analysis of the first input signals and the second input signals. The determined external context indicates at least a position of the device relative to a user or an orientation of the device relative to a user. Responsive to determining the external context, the electronic device executes a particular user input action.

Abstract: Provided is a long-acting method for preventing or treating glucose metabolism disorders that includes administering a beta-lactam compound or a pharmaceutically acceptable salt thereof to a subject in need thereof. The method for preventing or treating glucose metabolism disorders has a long-acting effect that lasts more than two days even after medication has been stopped.

Abstract: Provided is a long-acting method for preventing or treating glucose metabolism disorders that includes administering a beta-lactam compound or a pharmaceutically acceptable salt thereof to a subject in need thereof. The method for preventing or treating glucose metabolism disorders has a long-acting effect that lasts more than two days even after medication has been stopped.

Abstract: In an embodiment, a system includes: a cassette comprising a slit opening configured to house a wafer; a blade configured to move the wafer to and from the slit opening by extending into the slit opening, wherein a blade thickness of the blade is at most ? of a height of the slit opening and wherein the blade is configured to secure the wafer within a pocket on the blade that is at least ? of a wafer thickness of the wafer.

Abstract: A control device for controlling a rotary electric machine, the control device includes a current command unit, a voltage conversion device, a current conversion device, a signal demodulation device, an error compensation unit, an adding device and a position estimation device. The current command unit provides a d-axis current command and a q-axis current command. The current conversion device converts a current of the rotary electric machine to a synchronous reference coordinate current. The signal demodulation device computes a current variation of a high-frequency synchronous reference coordinate current. The error compensation device outputs a first correction value. The adding device adds the current variation of the high-frequency synchronous reference coordinate current and the first correction value to generate a second correction value.

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

Abstract: A method includes a processor of an electronic device receiving first input signals from a first sensor in response to user contact at a first edge of the device and second input signals from a second sensor in response to user contact at a second edge of the electronic device. The first and second sensors are covered by a housing of the device. The processor determines an external context of the device based on analysis of the first input signals and the second input signals. The determined external context indicates at least a position of the device relative to a user or an orientation of the device relative to a user. Responsive to determining the external context, the electronic device executes a particular user input action.

Abstract: A system and method for identifying application layer behavior are disclosed. In order to detect intrusion into an industrial control system, the system and method determine a current status of application layer behavior of the industrial control system by analyzing a current packet which is propagated between a master device and a slave device in the industrial control system, and identify whether the current status of the application layer behavior is normal according to a normal behavior status list.

Abstract: Disclosed embodiments include a multi-chip package that includes a stacked through-silicon via in a first semiconductive device, and the first semiconductive device is face-to-face coupled to a second semiconductive device by the stacked through-silicon via. The stacked through-silicon via includes a first portion that contacts a second portion, and the first portion emerges from an active semiconductive region of the first semiconductive device adjacent a keep-out region.

Abstract: A semiconductor device and associated methods are disclosed. In one example, dies are interconnected through a bridge in a substrate. A reference voltage stack extends over at least a portion of the interconnect bridge, and a passive component is coupled to the reference voltage stack. In one example, the passive component helps to reduce interference in the power supply to components in the semiconductor device, such as the dies and the interconnect bridge.

Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

Abstract: The present invention relates to a monitoring device and system, the monitoring device comprises a sensing module arranged to detect a condition of an object associated with the monitoring device; a wireless communication module operably connected with the sensing module, the communication module being arranged to communicate the condition detected by the sensing module to an external electronic device; and an identification module with a unique identifier arranged to be read for identifying the monitoring device. During transportation and storage of object, it is desirable to monitor some physical properties continuously, detect anti-counterfeiting and track the location of the object.

Abstract: A transistor structure including a substrate, a transistor device, a split buried layer, and a second buried layer is provided. The substrate has a device region. The transistor device is located in the device region. The split buried layer is located under the transistor device in the substrate and includes first buried layers separated from each other. The second buried layer is located under the split buried layer in the substrate and connects the first buried layers. The second buried layer and the split buried layer have a first conductive type. The transistor structure may have a higher breakdown voltage.

Abstract: A footwear includes a sole and a toe separating device disposed on a top surface of the sole. The toe separating device includes a hallux separating unit having a hallux separating column for separating the hallux and the second toe of a user's foot. The hallux separating column has a hallux columnar body defining a receiving space with an opening formed in a top surface thereof. The hallux columnar body has a length in a top-bottom direction and a width in a left-right direction transverse to the top-bottom direction. A hallux adjusting member is removably inserted into the receiving space through the opening to expand the width of the hallux columnar body.

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

Abstract: A liftable table foot frame (1) that is easily assembled includes a horizontal frame body (10), a post (20), a side wing (30) and a linking mechanism (40). The horizontal frame body (10) includes a horizontal rod (11). One end of the post (20) pivotally connects to the horizontal rod (11). The side wing (30) includes a plate body (31) and inserting blocks (32) connected to the plate body (31). The inserting blocks (32) separately couple with an end of the horizontal rod (11). The linking mechanism (40) connects the post (20) and the side wing (30). When the post (20) is turned out relative to the horizontal rod (11), the inserting blocks (32) are driven toward the horizontal rod (11) through the linking mechanism (40) to tense and position. Thus, easiness and convenience of assembling can be increased.

Abstract: A control method for controlling a synchronous motor includes calculating d-axis and q-axis current commands according to a frequency command and frequency of the synchronous motor by a MTPA control unit; when a feedback output voltage of the synchronous motor is larger than a control level, outputting a flux-weakening current command by a voltage control unit; calculating a flux-weakening current feed-forward value according to the frequency, a target level and the q-axis current command by a feed-forward control unit; when the sum of the flux-weakening current command and the flux-weakening current feed-forward value is smaller than the d-axis current command, adjusting the d-axis current command by the sum of the flux-weakening current command and the flux-weakening current feed-forward value; and outputting d-axis and q-axis voltage commands according to the adjusted d-axis current command and the q-axis current command to control the synchronous motor.

Abstract: A transistor structure including a substrate, a transistor device, a split buried layer, and a second buried layer is provided. The substrate has a device region. The transistor device is located in the device region. The split buried layer is located under the transistor device in the substrate and includes first buried layers separated from each other. The second buried layer is located under the split buried layer in the substrate and connects the first buried layers. The second buried layer and the split buried layer have a first conductive type. The transistor structure may have a higher breakdown voltage.

Abstract: A system and method for identifying application layer behavior are disclosed. In order to detect intrusion into an industrial control system, the system and method determine a current status of application layer behavior of the industrial control system by analyzing a current packet which is propagated between a master device and a slave device in the industrial control system, and identify whether the current status of the application layer behavior is normal according to a normal behavior status list.