Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a controller, a first mold compound surrounding the controller, a plurality of semiconductor dies, a second mold compound surrounding the plurality of semiconductor dies, and one or more through-mold interconnects electrically coupling the controller to the plurality of semiconductor dies.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, an apparatus includes a first integrated circuit, a second integrated circuit, and an interposer that is part of an electrical circuit that electrically couples the first integrated circuit and the second integrated circuit. The interposer includes a casing and at least one malleable, conductive wire that is embedded in the casing and that is contoured to reroute a signal through the casing.

Abstract: Stacked semiconductor devices, and related systems and methods, are disclosed herein. In some embodiments, the stacked semiconductor device includes a package substrate having at least a first layer and a second layer, an interconnect extending through the package substrate, a stack of dies carried by the package substrate, and one or more wirebonds electrically coupling the stack of dies to package substrate. Each of the layers of the package substrate can include a section of the interconnect with a frustoconical shape. Each of the sections can be directly coupled together. Further, the section in an uppermost layer of the package substrate is exposed at an upper surface of the package substrate. The wirebonds can be directly coupled to the exposed surface of the uppermost section.

Abstract: A semiconductor device assembly including a substrate; a first split via including a first via land that is disposed on a surface of the substrate and that has a first footprint with a half-moon shape with a first radius of curvature, and a first via that passes through the substrate and that has a second radius of curvature, wherein the first via is disposed within the first footprint; and a second split via including a second via land that is disposed on the surface of the substrate and that has a second footprint with the half-moon shape with the first radius of curvature, and a second via that passes through the substrate and that has the second radius of curvature, wherein the second via is disposed within the second footprint, wherein the first and second via lands are disposed entirely within a circular region having the first radius of curvature.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a substrate, a first integrated circuit die over the substrate including a first recess that penetrates into a first edge of the first integrated circuit die, and a second integrated circuit die over the first integrated circuit die including a second recess that penetrates into a second edge of the second integrated circuit die. The semiconductor device assembly includes a pillar structure that uses the first recess and the second recess to align perimeters of the first integrated circuit die and the second integrated circuit die.

Abstract: A microelectronic device includes a substrate and at least one conductive structure in the substrate. The microelectronic device further includes an electronic component at least partially embedded in the substrate. The electronic component coupled to the at least one conductive structure at a first end of the electronic component and vertically extending between the at least one conductive structure and a surface of the substrate. The microelectronic device also includes a conductive cap coupling a second end of the electronic component to a second conductive structure on a first surface of the substrate.

Abstract: Methods, systems, and devices for identification marking cavity filling for semiconductor packages are described. A semiconductor device may be formed to be relatively less susceptible to surface failures, including failure initiated by stress risers associated with identification markings. For example, a mold compound material may be formed over one or more semiconductor dies of the semiconductor device. One or more identification markings may be formed in the mold compound material based on forming one or more cavities into a surface of the material. A second material may be formed in the one or more cavities and may fill each of the cavities. The second material may be a crack-resistant material. The second material may be formed through one or more apertures of a stencil, or the second material may be formed by applying the second material over an entirety of the surface of the semiconductor device.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a controller, a first mold compound surrounding the controller, a plurality of semiconductor dies, a second mold compound surrounding the plurality of semiconductor dies, and one or more through-mold interconnects electrically coupling the controller to the plurality of semiconductor dies.

Abstract: Methods, systems, and devices for wire bonding for stacked memory dies are described. A memory system may include a stack of memory dies. As the stack grows to include more and more memory dies, the length of the wires coupling the memory dies with the control circuit may increase. Bonding multiple wires using an adhesive may increase a gap between neighboring wires coupled with the same memory die or different memory dies. For example, bonding one wire to a neighboring wire may pull one or both of the bonded wires away from their original placement, increasing a gap between the bonded wires and one or more neighboring wires. Bonding the wires coupled with a lower memory die may increase a gap such that sagging wires coupled with an upper memory die may be positioned in the gap to avoid shorting with the lower wires.

Abstract: A semiconductor package assembly includes a substrate, a die stack including at least a bottom die, an inert top spacer, and at least a first inert base spacer. The inert top and base spacers are exclusive of any circuits. A top surface of the inert top spacer is directly attached to a bottom surface of the bottom die in the die stack. A top surface of the first inert base spacer is directly attached to a bottom surface of the inert top spacer and a bottom surface of the first inert base spacer is directly attached to the substrate. The footprint of the inert base spacer is smaller than the footprint of the inert top spacer. In some embodiments, the footprint of the inert base spacer is positioned entirely within the footprint of the inert top spacer.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a first semiconductor die, a second semiconductor die in a stacked arrangement with the first semiconductor die, and a flexible interposer disposed between the first semiconductor die and the second semiconductor die. The flexible interposer may include a first flexible layer, a second flexible layer, and a conductive trace disposed between the first flexible layer and the second flexible layer. A spacer portion of the flexible interposer may space the first semiconductor die from the second semiconductor die. A connecting portion of the flexible interposer may extend from the spacer portion beyond edges of the first semiconductor die and the second semiconductor die.

Abstract: Methods, systems, and devices for connection designs for memory systems are described. A memory system may include a package and a printed circuit board (PCB). An interface of the package may be coupled with the PCB via a set of springs, where each spring may include a material configured to deform based at least in part on a shape of the package, a shape of the PCB, or both. The memory system may also include a set of latches that may secure the package in a fixed position relative to the PCB. That is, the set of springs may provide an electrical connection between the package and the PCB, and the set of latches may provide a mechanical connection between the package and the PCB. In some examples, the package, the PCB, or both, may include one or more connection structures configured to receive the latches.

Abstract: A semiconductor device assembly including a substrate; a first split via including a first via land that is disposed on a surface of the substrate and that has a first footprint with a half-moon shape with a first radius of curvature, and a first via that passes through the substrate and that has a second radius of curvature, wherein the first via is disposed within the first footprint; and a second split via including a second via land that is disposed on the surface of the substrate and that has a second footprint with the half-moon shape with the first radius of curvature, and a second via that passes through the substrate and that has the second radius of curvature, wherein the second via is disposed within the second footprint, wherein the first and second via lands are disposed entirely within a circular region having the first radius of curvature.

Abstract: A semiconductor device assembly includes a circuit substrate including a first substrate surface and a second substrate surface; a wedge structure arranged on the first substrate surface, wherein the wedge structure has a slanted upper surface that is slanted with respect to the first substrate surface; a die stack arranged on the slanted upper surface, wherein the die stack comprises a plurality of dies, wherein the die stack is oriented at an angle corresponding to the slanted upper surface, and wherein the die stack has a first lateral portion coupled to the slanted upper surface and a second lateral portion that overhangs from the slanted upper surface; a package casing disposed over the first substrate surface, wherein the package casing encapsulates the die stack and covers at least part of the first substrate surface; and a plurality of conductive interconnect structures coupled to the second substrate surface.

Abstract: A semiconductor package assembly includes a substrate, a die stack including at least a bottom die, an inert top spacer, and at least a first inert base spacer. The inert top and base spacers are exclusive of any circuits. A top surface of the inert top spacer is directly attached to a bottom surface of the bottom die in the die stack. A top surface of the first inert base spacer is directly attached to a bottom surface of the inert top spacer and a bottom surface of the first inert base spacer is directly attached to the substrate. The footprint of the inert base spacer is smaller than the footprint of the inert top spacer. In some embodiments, the footprint of the inert base spacer is positioned entirely within the footprint of the inert top spacer.

Abstract: Methods, systems, and devices for connection designs for memory systems are described. A memory system may include a package and a printed circuit board (PCB). An interface of the package may be coupled with the PCB via a set of springs, where each spring may include a material configured to deform based at least in part on a shape of the package, a shape of the PCB, or both. The memory system may also include a set of latches that may secure the package in a fixed position relative to the PCB. That is, the set of springs may provide an electrical connection between the package and the PCB, and the set of latches may provide a mechanical connection between the package and the PCB. In some examples, the package, the PCB, or both, may include one or more connection structures configured to receive the latches.

Abstract: Some implementations herein provide a semiconductor package and methods of formation. The semiconductor package includes a semiconductor die having a first set of conductive structures connected with a substrate having a second set of conductive structures, where a profile of heights of the second set of conductive structures includes a curvature relative to a surface of the substrate. The curvature is configured to compensate for warpage (e.g., offset warpage) that may be induced to the semiconductor die and/or the substrate during a reflow process that joins the semiconductor die and the substrate. By compensating for the warpage, a planarity of an interface region including solder joints between the first and second sets of conductive structures is increased. Increasing the planarity may reduce solder joint defects in the semiconductor package relative to another semiconductor package including another substrate having conductive structures without the profile having the curvature.

Abstract: A semiconductor device assembly includes a circuit substrate including a first substrate surface and a second substrate surface; a first die stack, a second die stack, and a third die stack arranged on the first substrate surface; a plurality of conductive interconnect structures coupled to the second substrate surface; a first signal channel including a first subset of the plurality conductive interconnect structures; and a second signal channel including a second subset of the plurality conductive interconnect structures. The first signal channel is electrically coupled to a first plurality of die stacks including at least two of the first die stack, the second die stack, and the third die stack. The second signal channel is electrically coupled to a second plurality of die stacks including at least two of the first die stack, the second die stack, and the third die stack.

Abstract: An apparatus includes selectable a circuit placement mechanism configured to support two or more different circuit layouts. The circuit placement mechanism may include an overlap of electrical connections associated with the two or more circuit layouts and joined through an etch back selector. The etch back selector may enable the apparatus to function according to a selected one of the two or more different circuit layouts.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a circuit substrate comprising a first substrate surface and a second substrate surface arranged opposite to the first substrate surface; at least one die arranged on the first substrate surface; a package casing disposed over the first substrate surface, wherein the package casing encapsulates the at least one die and covers at least part of the first substrate surface; a plurality of conductive interconnect structures coupled to the second substrate surface, wherein the plurality of conductive interconnect structures are electrically coupled to the at least one die via the circuit substrate; and at least one molded compound structure arranged on the second substrate surface, wherein the at least one molded compound structure is configured to reduce a coplanarity of the plurality of conductive interconnect structures.