Abstract: A silicon based PT/PZT/PT sandwich structure is disclosed. A dielectric layer is formed over a semiconductor substrate. The dielectric layer preferably comprises a silicon dioxide layer. A first and the second conductive films are sequentially formed over the dielectric layer. A first ferroelectric film is formed over the first and second conductive films. A second ferroelectric film is formed over the first ferroelectric film. A third ferroelectric film is formed over the second ferroelectric film. The resulting structure is annealed. A third and fourth conductive films are sequentially formed over the third ferroelectric layer. The third and fourth conductive films are patterned.

Abstract: A structure of a cantilever is disclosed. A semiconductor substrate is provided. A first support layer is formed over a semiconductor substrate. A second support layer is formed over the first support layer. A thin first and second conductive films are sequentially formed over the substrate. The first and the second conductive films form a lower electrode. A ferroelectric film is formed over the lower electrode. A third and fourth conductive films are sequentially formed over the ferroelectric film. The third and the fourth conductive layer form the upper electrode. The resulting structure is annealed.

Abstract: A silicon based PT/PZT/PT sandwich structure is disclosed. A dielectric layer is formed over a semiconductor substrate. The dielectric layer preferably comprises a silicon dioxide layer. A first and the second conductive films are sequentially formed over the dielectric layer. A first ferroelectric film is formed over the first and second conductive films. A second ferroelectric film is formed over the first ferroelectric film. A third ferroelectric film is formed over the second ferroelectric film. The resulting structure is annealed. A third and fourth conductive films are sequentially formed over the third ferroelectric layer. The third and fourth conductive films are patterned.